Difference between revisions of "Process Hybrid Silicon"
From OptoelectronicsWiki
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+ | ==Standardized Process Follower== | ||
+ | |||
+ | {| border="3" | ||
+ | |+ '''Hybrid Silicon Process Modules''' | ||
+ | |- style="background:red; color:white" | ||
+ | ! Module !! Manager !! Status !! Description | ||
+ | |- | ||
+ | | Initial wafer check || || || | ||
+ | |- | ||
+ | | Dice and cleave || Jared || || | ||
+ | |- | ||
+ | | SOI waveguide definition || Sudha || || | ||
+ | |- | ||
+ | | SOI grating definition || Jock || || | ||
+ | |- | ||
+ | | SOI actives definition || Jon D. || || | ||
+ | |- | ||
+ | | Vertical Cchannel definition || Sudha || || | ||
+ | |- | ||
+ | | Protection layer definition || Geza || || | ||
+ | |- | ||
+ | | Quantum well intermixing || Sid || || | ||
+ | |- | ||
+ | | Wafer bonding || Jon P., Di || || | ||
+ | |- | ||
+ | | Gap fill || Geza || || | ||
+ | |- | ||
+ | | P-mesa definition || Geza || || | ||
+ | |- | ||
+ | | Lower SCH definition || Geza || || | ||
+ | |- | ||
+ | | N-InP definition || Geza || || | ||
+ | |- | ||
+ | | N-metal definition || Sid || || | ||
+ | |- | ||
+ | | P-metal definition || Jock, Sid || || | ||
+ | |- | ||
+ | | Ion implantation || Sid || || | ||
+ | |- | ||
+ | | Via definition || Jock || || | ||
+ | |- | ||
+ | | Probe metal definition || Sid || || | ||
+ | |- | ||
+ | | Remove III/V in gap || Geza || || | ||
+ | |- | ||
+ | | Dice and polish || Jared, Geza || || | ||
+ | |- | ||
+ | | Initial standard wafer testing || Martijn || || | ||
+ | |- | ||
+ | |||
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+ | |} | ||
+ | |||
+ | ==Old process followers== | ||
+ | |||
+ | |||
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{| border="3" | {| border="3" | ||
|+ '''Single steps of hybrid silicon processes''' | |+ '''Single steps of hybrid silicon processes''' |
Revision as of 12:39, 14 October 2011
Standardized Process Follower
Module | Manager | Status | Description |
---|---|---|---|
Initial wafer check | |||
Dice and cleave | Jared | ||
SOI waveguide definition | Sudha | ||
SOI grating definition | Jock | ||
SOI actives definition | Jon D. | ||
Vertical Cchannel definition | Sudha | ||
Protection layer definition | Geza | ||
Quantum well intermixing | Sid | ||
Wafer bonding | Jon P., Di | ||
Gap fill | Geza | ||
P-mesa definition | Geza | ||
Lower SCH definition | Geza | ||
N-InP definition | Geza | ||
N-metal definition | Sid | ||
P-metal definition | Jock, Sid | ||
Ion implantation | Sid | ||
Via definition | Jock | ||
Probe metal definition | Sid | ||
Remove III/V in gap | Geza | ||
Dice and polish | Jared, Geza | ||
Initial standard wafer testing | Martijn |
Old process followers
Process ID | Version | Process flow | Process follower | Description |
---|---|---|---|---|
SP-PWD | Si WG etch | Si WG etch | Single etch-step SOI process; passive components | |
SP-VC | Si VC etch | Vertical channel etch | ||
HSP-METCH | Mesa etch | Forms mesa: see page for optimization efforts | ||
HSP-QW | III-V QW etch | Quantum well etch | ||
HSP-NETCH | n-layer etch | Remove n-layer to expose Si | ||
HSP-PTLM | p-TLM step | An additional process step is necessary to pattern p-TLM structures | ||
HSP-METAL | thin metal | Thin metal deposition | ||
HSP-PP | Probe pad deposition | Pattern and deposit probe metal | ||
Wafer bonding | Bonding | Beginner's guide to plasma assisted wafer bonding | ||
Wafer bonding II | direct wafer bonding | O2 plasma assisted wafer bonding (rev. 2008) | ||
Non-planar wafer bonding | non-planar bonding | Non-planar wafer bonding for bonding multiple epis to a single Si piece (see Jon Geske's thesis) | ||
TLM only | TLM only | Post-bond process for use with a TLM-only mask set |
Process ID | Version | Process flow | Process follower | Description |
---|---|---|---|---|
PHASER | 2 | PHASER | PHASER | PHASER (SOAs, thermal phase tuning pads, MMIs) process flow. Alignment mark coordinates |
Epump 2 | process flow | Epump 2 | Mostly designed for lasers, revised 4/6/07. Starts after WG and VC etches. | |
Self-aligned rev. 2 | process flow | self rev. 2 | Self-aligned process, starts after substrate removal, revised 2007. Contains PR spin speeds and exposure times for Stepper (6300) |
Check the Device Run page for more process followers, mask layout files, etc.
Process ID | Version | Process flow | Process follower | Description |
---|---|---|---|---|
PHASER | 1 | PHASER gen 1 | PHASER (SOAs, thermal phase tuning pads, MMIs) process flow. | |
Epump 2 | process flow | Epump 2 | Mostly designed for lasers, revised 4/6/07. Starts after WG and VC etches. | |
Si WG etch | 1 | WG etch | ca. 2008 Si waveguide etch process | |
Si WG etch | 2 | WG etch | Si waveguide etch process with gratings, PR reflow, and vertical channels |