Difference between revisions of "CaseList"
From OptoelectronicsWiki
(Typical Processing Issues and Solutions) |
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| [[Dice and cleave]] || || || | | [[Dice and cleave]] || || || | ||
|- | |- | ||
− | | [[SOI waveguide | + | | [[SOI waveguide]] || || || |
|- | |- | ||
− | | [[SOI grating | + | | [[SOI grating]] || || || |
|- | |- | ||
− | | [[SOI actives | + | | [[SOI actives]] || || || |
|- | |- | ||
− | | [[Vertical channel | + | | [[Vertical channel]] || || || |
|- | |- | ||
− | | [[Protection layer | + | | [[Protection layer]] || || || |
|- | |- | ||
| [[Quantum well intermixing]] || || || | | [[Quantum well intermixing]] || || || | ||
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| [[Gap fill]] || || || | | [[Gap fill]] || || || | ||
|- | |- | ||
− | | [[P-mesa | + | | [[P-mesa]] || || || |
|- | |- | ||
− | | [[Lower SCH | + | | [[Lower SCH]] || || || |
|- | |- | ||
− | | [[N-InP | + | | [[N-InP]] || || || |
|- | |- | ||
− | | [[N-metal | + | | [[N-metal]] || || || |
|- | |- | ||
− | | [[P-metal | + | | [[P-metal]] || || || |
|- | |- | ||
| [[Ion implantation]] || || || | | [[Ion implantation]] || || || | ||
|- | |- | ||
− | | [[Via | + | | [[Via]] || || || |
|- | |- | ||
| [[Probe metal]] || || || | | [[Probe metal]] || || || |
Revision as of 09:27, 3 November 2011
Process Issues and Defects
Process Step | Issue or Defect | Link | |
---|---|---|---|
Initial wafer check | |||
Dice and cleave | |||
SOI waveguide | |||
SOI grating | |||
SOI actives | |||
Vertical channel | |||
Protection layer | |||
Quantum well intermixing | |||
Wafer bonding | |||
Gap fill | |||
P-mesa | |||
Lower SCH | |||
N-InP | |||
N-metal | |||
P-metal | |||
Ion implantation | |||
Via | |||
Probe metal | |||
Remove III/V in gap | |||
Dice and polish | |||
Initial standard wafer testing |