Difference between revisions of "Modulator"
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== Design == | == Design == | ||
| − | Epitaxy: [[Media:report_0707231-2_110714.pdf|Specs of the 1250nm EPI]] | + | Epitaxy 1250: [[Media:report_0707231-2_110714.pdf|Specs of the 1250nm EPI]] |
| + | Epitaxy 1470: [[Media:report_0707231-3_110714.pdf|Specs of the 1470nm EPI]] | ||
Structure: | Structure: | ||
Revision as of 14:31, 9 April 2012
The objective is to develop high speed, low driving voltage, high extinction ratio modulator based on hybrid silicon platform.
Contents
The first generation
Time: 2010
Process
Process flow:
xls file: Media:EAM10_process.xls
slides: Media:EAM10_process.pptx
Mask:
Mask files: Media: EAM10_Mask.zip
Related Papers
http://optoelectronics.ece.ucsb.edu/profile/yongbo-tang
The second generation
Time: 2011
Design
Epitaxy 1250: Specs of the 1250nm EPI Epitaxy 1470: Specs of the 1470nm EPI
Structure:
Simulation:
Process
xls file: Media:EAM11_process.xls
slides: Media:EAM11_process_flow.pptx
Report
Q1 report: Study of Integrated Hybrid Silicon Modulators Q1 slides: Comparison of different hybrid modulator design
