Difference between revisions of "Modulator"
From OptoelectronicsWiki
(→The second generation) |
(→The first generation) |
||
| Line 4: | Line 4: | ||
== Process == | == Process == | ||
| − | |||
xls file: [[Media:EAM10_process.xls]] | xls file: [[Media:EAM10_process.xls]] | ||
| Line 10: | Line 9: | ||
slides: [[Media:EAM10_process.pptx]] | slides: [[Media:EAM10_process.pptx]] | ||
| − | Mask | + | == Mask == |
Mask files: [[Media: EAM10_Mask.zip]] | Mask files: [[Media: EAM10_Mask.zip]] | ||
Revision as of 14:42, 9 April 2012
The objective is to develop high speed, low driving voltage, high extinction ratio modulator based on hybrid silicon platform.
Contents
The first generation
Time: 2010
Process
xls file: Media:EAM10_process.xls
slides: Media:EAM10_process.pptx
Mask
Mask files: Media: EAM10_Mask.zip
Related Papers
http://optoelectronics.ece.ucsb.edu/profile/yongbo-tang
The second generation
Time: 2011
Design
Epitaxy 1250: Specs of the 1250nm EPI Epitaxy 1470: Specs of the 1470nm EPI
Structure:
Simulation:
Process
xls file: Media:EAM11_process.xls
slides: Media:EAM11_process_flow.pptx
Mask
Mask: EAM11 Mask Final/revised on 20111128
Report
Q1 report: Study of Integrated Hybrid Silicon Modulators Q1 slides: Comparison of different hybrid modulator design
