Difference between revisions of "EPHI"
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== Processing == | == Processing == | ||
Revision as of 13:30, 29 October 2012
Contents
Overview
EPHI aims to integrate ultra low-loss waveguides (SiN/SiO2 on Si developed in IPHOD) and high-Q resonators with the hybrid Silicon platform to produce a low-noise oscillator.
Splits
Processing
EPHI Shuttle run-1 (SOA only)
| Process ID | Process flow | Process follower | Description |
|---|---|---|---|
| WG etch | Complete Flow A | Si WG etch | Rib waveguide formation, Alignment marks. |
| VC etch | Si VC etch | Vertical channel etch | |
| Bonding | Bonding | Plasma assisted wafer bonding guide - Author:Michael D | |
| InP-mesa etch | P-mesa etch | Mesa etch to top SCH layer | |
| QW wet etch | QW etch | Active layer wet etch | |
| N-metal deposition | N-metal deposition | N-metal (Ni/Ge/Au/Ni/Au) | |
| Oxide Planarization & Via formation | Planarization & Via etch | 1um oxide deposition & via etch | |
| P-/Probepad metal deposition | Probepad metallization | P-/probepad metal stack (Pd/Ti/Pd/Au) |
| Process ID | Process flow | Process follower | Description |
|---|---|---|---|
| WG etch | Complete Flow B | Si WG etch | Rib waveguide formation, Alignment marks. |
| VC etch | Si VC etch | Vertical channel etch | |
| Bonding | Bonding | Plasma assisted wafer bonding guide - Author:Michael D | |
| P-metal deposition | p-metal deposition | P-metal stack (Pd/W) | |
| InP-mesa etch | P-mesa etch | Mesa etch to top SCH layer | |
| QW wet etch | QW etch | Active layer wet etch | |
| N-metal deposition | N-metal deposition | N-metal (Ni/Ge/Au/Ni/Au) | |
| Oxide Planarization & Via formation | Planarization & Via etch | 1um oxide deposition & via etch | |
| Probepad metal deposition | Probepad metallization | Probepad metal stack (Pd/Ti/Pd/Au) |
Characterization
Dev2 SOA shortloop - look-ahead (no proton implant)
look-ahead (no proton implant)
Dev2 SOA shortloop - after proton implant
first chips (proton implanted on column 3)
