Difference between revisions of "CaseList"
From OptoelectronicsWiki
(Typical Processing Issues and Solutions) |
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| Line 10: | Line 10: | ||
| [[Dice and cleave]] || || || | | [[Dice and cleave]] || || || | ||
|- | |- | ||
| − | | [[SOI waveguide | + | | [[SOI waveguide]] || || || |
|- | |- | ||
| − | | [[SOI grating | + | | [[SOI grating]] || || || |
|- | |- | ||
| − | | [[SOI actives | + | | [[SOI actives]] || || || |
|- | |- | ||
| − | | [[Vertical channel | + | | [[Vertical channel]] || || || |
|- | |- | ||
| − | | [[Protection layer | + | | [[Protection layer]] || || || |
|- | |- | ||
| [[Quantum well intermixing]] || || || | | [[Quantum well intermixing]] || || || | ||
| Line 26: | Line 26: | ||
| [[Gap fill]] || || || | | [[Gap fill]] || || || | ||
|- | |- | ||
| − | | [[P-mesa | + | | [[P-mesa]] || || || |
|- | |- | ||
| − | | [[Lower SCH | + | | [[Lower SCH]] || || || |
|- | |- | ||
| − | | [[N-InP | + | | [[N-InP]] || || || |
|- | |- | ||
| − | | [[N-metal | + | | [[N-metal]] || || || |
|- | |- | ||
| − | | [[P-metal | + | | [[P-metal]] || || || |
|- | |- | ||
| [[Ion implantation]] || || || | | [[Ion implantation]] || || || | ||
|- | |- | ||
| − | | [[Via | + | | [[Via]] || || || |
|- | |- | ||
| [[Probe metal]] || || || | | [[Probe metal]] || || || | ||
Revision as of 09:27, 3 November 2011
Process Issues and Defects
| Process Step | Issue or Defect | Link | |
|---|---|---|---|
| Initial wafer check | |||
| Dice and cleave | |||
| SOI waveguide | |||
| SOI grating | |||
| SOI actives | |||
| Vertical channel | |||
| Protection layer | |||
| Quantum well intermixing | |||
| Wafer bonding | |||
| Gap fill | |||
| P-mesa | |||
| Lower SCH | |||
| N-InP | |||
| N-metal | |||
| P-metal | |||
| Ion implantation | |||
| Via | |||
| Probe metal | |||
| Remove III/V in gap | |||
| Dice and polish | |||
| Initial standard wafer testing |
