Difference between revisions of "Wafer bonding"
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[[Media:WIM111110-UCSB-Plasma_Activated_Bonding-new_findings-01_email.pdf| EVG]] has produced some slides on wafer bonding. | [[Media:WIM111110-UCSB-Plasma_Activated_Bonding-new_findings-01_email.pdf| EVG]] has produced some slides on wafer bonding. | ||
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They summarize their findings on how bonding works at the molecular level. | They summarize their findings on how bonding works at the molecular level. | ||
Details on change in bond strength with time, use of N2 as activation, temp required for good bonding | Details on change in bond strength with time, use of N2 as activation, temp required for good bonding | ||
and variation with presence of native oxide / thermal oxide on surface. | and variation with presence of native oxide / thermal oxide on surface. | ||
Revision as of 11:52, 15 November 2011
Back to Process_Hybrid_Silicon.
Current Processes
Bonding Defects - Media:Bonding_Issues.pptx
Useful references
EVG has produced some slides on wafer bonding.
They summarize their findings on how bonding works at the molecular level. Details on change in bond strength with time, use of N2 as activation, temp required for good bonding and variation with presence of native oxide / thermal oxide on surface.
