Difference between revisions of "Epitaxy layer design"
From OptoelectronicsWiki
(→Suggestions for revisions) |
(→Suggestions for revisions) |
||
Line 12: | Line 12: | ||
[[media:InAlGaAs_params.m|01/18/2012 Calculation of the epitaxy layer parameters]] / [[Simulation/Epi_Design|Epi Design]] | [[media:InAlGaAs_params.m|01/18/2012 Calculation of the epitaxy layer parameters]] / [[Simulation/Epi_Design|Epi Design]] | ||
[[media:HW_SOA_D.txt|01/18/2012 Optical Mode Calculation Script/Fimmwave/jaredwave]] | [[media:HW_SOA_D.txt|01/18/2012 Optical Mode Calculation Script/Fimmwave/jaredwave]] | ||
− | [[media:SOA_EPI. | + | [[media:SOA_EPI.zip|01/18/2012 Epitaxy layer simulation/Harold]] |
Revision as of 11:23, 20 January 2012
Back to Process_Hybrid_Silicon.
Current EPI Structure
Suggestions for revisions
01/18/2012 Order Tape Out Form 01/18/2012 Calculation of the epitaxy layer parameters / Epi Design 01/18/2012 Optical Mode Calculation Script/Fimmwave/jaredwave 01/18/2012 Epitaxy layer simulation/Harold