Difference between revisions of "Modulator"

From OptoelectronicsWiki
Jump to: navigation, search
(The first generation)
(Design)
Line 24: Line 24:
  
 
   Structure:
 
   Structure:
 +
 +
  Simulation:
  
 
== Process ==
 
== Process ==

Revision as of 09:50, 1 April 2012

The objective is to develop high speed, low driving voltage, high extinction ratio modulator based on hybrid silicon platform.

The first generation

Time: 2010

Process

Process flow:

 xls file: Media:EAM10_process.xls‎
 slides: Media:EAM10_process.pptx

Mask files:

 Media: EAM10_Mask.zip

Related Papers

http://optoelectronics.ece.ucsb.edu/profile/yongbo-tang

The second generation

Time: 2011

Design

 Epitaxy: Specs of the 1250nm EPI
 Structure:
 Simulation:

Process

 xls file: Media:EAM11_process.xls‎
 slides: TBU

Report

 Q1 report: Study of Integrated Hybrid Silicon Modulators

 Q1 slides: Comparison of different hybrid modulator design

Related Papers

http://optoelectronics.ece.ucsb.edu/profile/yongbo-tang