Difference between revisions of "EPHI"

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(Overview)
(Overview)
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EPHI aims to integrate ultra low-loss waveguides (SiN/SiO2 on Si developed in IPHOD) and high-Q resonators with the hybrid Silicon platform to produce a low-noise oscillator.
 
EPHI aims to integrate ultra low-loss waveguides (SiN/SiO2 on Si developed in IPHOD) and high-Q resonators with the hybrid Silicon platform to produce a low-noise oscillator.
The first fabrication run (Shuttle Run 1 / Dev2) is an investigate short-loop to determine the best design space for tapers and rib widths in gain elements, as well as to try out the new simplified process proposed by Mike Davenport.  Fabrication is carried out by Mike Davenport, Jon Peters, and Sudha Srinivathan.  Testing is carried out by Mike Davenport, Sudha Srinivathan, and Jon Doylend.  Mask set was designed by Martijn Heck.  The run is coordinated during Friday HSP meetings between all five participants.
 
  
 
== Splits ==
 
== Splits ==

Revision as of 13:35, 29 October 2012

Overview

EPHI aims to integrate ultra low-loss waveguides (SiN/SiO2 on Si developed in IPHOD) and high-Q resonators with the hybrid Silicon platform to produce a low-noise oscillator.

Splits

Shuttle run 1 / Dev2
Mask set
Mask splits

Processing

EPHI Shuttle run-1 / Dev2 (SOA only)

Complete Process Follower

Modules for Process A - Lead Process
Process ID Process flow Process follower Description
WG etch Complete Flow A‎ Si WG etch‎ Rib waveguide formation, Alignment marks.
VC etch   Si VC etch Vertical channel etch
Bonding   Bonding Plasma assisted wafer bonding guide - Author:Michael D
InP-mesa etch   P-mesa etch Mesa etch to top SCH layer
QW wet etch   QW etch Active layer wet etch
N-metal deposition   N-metal deposition N-metal (Ni/Ge/Au/Ni/Au)
Oxide Planarization & Via formation   Planarization & Via etch 1um oxide deposition & via etch
P-/Probepad metal deposition   Probepad metallization P-/probepad metal stack (Pd/Ti/Pd/Au)



Complete Process Follower

Modules for Process B- Catch-up Process
Process ID Process flow Process follower Description
WG etch Complete Flow‎ B Si WG etch‎ Rib waveguide formation, Alignment marks.
VC etch   Si VC etch Vertical channel etch
Bonding   Bonding Plasma assisted wafer bonding guide - Author:Michael D
P-metal deposition   p-metal deposition P-metal stack (Pd/W)
InP-mesa etch   P-mesa etch Mesa etch to top SCH layer
QW wet etch   QW etch Active layer wet etch
N-metal deposition   N-metal deposition N-metal (Ni/Ge/Au/Ni/Au)
Oxide Planarization & Via formation   Planarization & Via etch 1um oxide deposition & via etch
Probepad metal deposition   Probepad metallization Probepad metal stack (Pd/Ti/Pd/Au)



Characterization

Dev2 SOA shortloop - look-ahead (no proton implant)
look-ahead (no proton implant)


Dev2 SOA shortloop - after proton implant
first chips (proton implanted on column 3)