Cleanroom Reports
From OptoelectronicsWiki
- List of etch and deposit rate for cleanroom tools. Each file includes the recipe being used and the calibrated etch rate.
- Please update yours if you run any calibration so that everyone can keep track of them.
- Wet etch recipes:
- Refractive indexes:
Dry Etch
| Etched material | Equipment | Substrate | Recipe | Latest etch rate | Latest update date | Latest update by | Calib. file | Note |
|---|---|---|---|---|---|---|---|---|
| Si | ICP#2 | SOI | Bowers si etch # 127 | 4nm/s | JUN 12, 2010 | Jon Peters | ICP#2 si etch rate | 40/20sccm BCl3/Cl2, 500/120W ICP/RF, 2.5Pa |
| SiO2 | ICP#2 | SOI | SiOxVert, recipe #101 | ~252nm/min | NOV 9, 2010; | Molly | Media:SiO2_Vert.pdf | 40sccm CHF3, 900/200W ICP/RF, 0.5Pa |
| SiN | ICP#2 | SOI | SiOxVert, recipe #101 | ~300nm/min | Geza | 40sccm CHF3, 900/200W ICP/RF, 0.5Pa | ||
| SiN PE-CVD | RIE#2 | SOI | MHA, 4/20/10 | ~7.4nm/min | Sept 26, 2011; | JonP | Methane/Hydrogen/Ar, 500V, , 125mT. Etched for 10 min using 955 1.8 resist as etch mask and then measured delta post strip. Tried using Pd/Ti/Pd/Au as etch mask on second piece but gold gone post etch and delta >300nm when it should be <300nm | |
| Cured SU8 (260 C for 30 min) | ICP#2 | SOI | Bowers SiOxVert etch # 101 | ~111 nm/min | MAY 27, 2010 | Geza | ||
| Cured SU8 (260 C for 30 min) | ICP#2 | SOI | aSi SF6 based etch # 156 (200W) | ~275 nm/min | JUN 1, 2010 | Geza | ||
| Cured SU8 (260 C for 30 min) | ICP#2 | SOI | aSi SF6 based etch # 156 (200W + 40 sccm O2) | ~465 nm/min | JUN 1, 2010 | Geza | ||
| Cured SU8 (260 C for 30 min) | ICP#2 | SOI | aSi SF6 based etch # 156 (300W + 40 sccm O2) | ~690 nm/min | JUN 1, 2010 | Geza | Use cured (115C/15min) SPR220-7 as mask, mask etched at ~550nm/min. Carefully check mask for cracking. |
Wet Etch
| Etched material | Solution | Mask | Latest etch rate | Latest update date | Latest update by | Calib. file | Note |
|---|---|---|---|---|---|---|---|
| Thermal oxide | BHF | PR or dielectric | ~100nm/min | ||||
| PECVD oxide | BHF | PR or dielectric | ~225nm/min | ||||
| PECVD SiN | BHF | ~30-50nm/min | Jon P. | ||||
| PECVD SiN | HF | ~500nm/min | Geza | PR does not survive as a mask | |||
| Cured SU8 (260 C for 30 min) | Piranha (150mL H2SO4 + 50mL H2O2) | ~500nm/s (v. fast) | MAY 27, 2010 | Geza | Piranha does not attack SiN or Gold, suspect heavy undercut but have no data | ||
| Titanium (sputtered) | BHF | PR | ~3.33nm/s (order of magnitude estimate) | JULY 5, 2010 | Geza | If you etch for >5min, cure PR at 115C for 15min prior to etch | |
| Ta2O5 | HF | no mask used | ~100nm/s | JUNE 1, 2011 | Geza | - |
Dielectric Deposit
| Material | Equipment | Latest deposit rate | Latest update date | Latest update by | Calib. file | Note |
|---|---|---|---|---|---|---|
| SiN | PECVD | |||||
| SiO2 | PECVD | |||||
| Ta2O5 | Ebeam #2 | 1A/sec | Hui-Wen | Deposit 203nm on blank Si sample (do BHF dip before deposition), measure index and thickness on ellipsometer (Filmetrics is not good for this), calculate required thickness from index (http://optoelectronics.ece.ucsb.edu/oewiki/index.php/Simulation/multiFilm), deposit dielectric on both facets (one at a time). Generally need 203nm for 7 degree facets, Ta2O5 index ~2.0, purple color. | ||
| SrF2 | Ebeam #2 | 2-5A/sec | Jon P | Per Je-Hyeong on Nov 16, 2010. Target 200 nm, measured 350 nm. Target 300 nm, measured 450 nm. For liftoff process only use 1165-ISO for liftoff because DI will dissolve SrF2 in 2-3 minutes. |
Lithography
| Equipment | Resist | Polarity | Hardmask | Substrate | Pre-Exposure Bake | Exposure Dose | Focus | Post-Exposure Bake | Development | Report | Author |
|---|---|---|---|---|---|---|---|---|---|---|---|
| Autostepper | SPR 955 0.9 | Positive | 200nm PECVD Oxide | GaAs | 95C,90s | ~.42s report variable | 0 | 110C,90s | MIF726,40s | Over-exposure Pattern Reduction | Jock |
