August 27-30, 2012

University of California

Santa Barbara, CA USA





Plenary Speakers


CSW 2012
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     IPRM 2012
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Joint Rump Session

The following distinguished personalities have agreed to deliver plenary talks at CSW 2012


THz Integrated Circuits

William Deal, Northrop-Grumman:

In this talk, progress in scaling integrated circuits towards 1 THz operating frequencies is described.  In particular, integrated receiver results at 670 GHz will be presented, along with Low Noise Amplifier (LNA) and Power Amplifier (PA) results.  Packaging approaches will be described, along with progress towards scaling to 850 GHz.


Dr. Bill Deal is a Department Staff Engineer at Northrop Grumman’s RF Product Center in Redondo Beach, CA. He leads several MMIC development efforts, including Northrop Grumman’s contract for the DARPA THz Electronics program, as well as developing his own microwave and millimeter wave designs. He has authored and co-authored more than 75 journal and conference papers, as well as 5 book chapters. Dr. Deal received the IEEE MTT-S Outstanding Young Engineer Award in 2009, and the 2012 IEEE MTT-S “Tatsuo Itoh” Best Paper Award for his work on Sub-Millimeter Wave Electronics.


III-V semiconductors for high-efficiency multijunction photovoltaics

John Geisz, NREL:

High-efficiency conversion of sunlight into electrical energy using III-V semiconductor materials has been improving steadily in recent years. Partitioning the solar spectrum with multiple III-V pn junctions, connected in series with tunneling diodes, can theoretically achieve 85% efficiency. Lattice-matched three-junction GaInP/GaAs/Ge solar cells have achieved over 41% efficiency under concentration, but continued improvements require a wider palette of compatible band gaps. Novel III-V materials such as dilute nitrides and metamorphic (lattice-mismatched) InGaAs ternaries are promising to better optimize band gaps and increase the number of junctions. Indeed, these materials have already pushed the efficiencies to 43.5% and 42.6% respectively, but low defect densities are required to realize the full potential. When non-radiative recombination is reduced significantly, the radiative limits of efficiency can almost be reached with proper optical management as demonstrated with a recent 28.2% single junction GaAs solar cell. Luminescent coupling between adjacent junctions can also become an important optical effect when non-radiative mechanisms are minimized.


John Geisz is a Senior Scientist at the National Renewable Energy Laboratory. He earned his Ph.D. degree in Chemical Engineering from the University of Wisconsin (Madison) and his bachelor's degree from the University of Michigan (Ann Arbor). John joined NREL in 1995 where he has been studying the OMVPE growth and characterization of a variety of III-V semiconductor materials for high-efficiency photovoltaic applications, including dilute nitrogen and boron-containing III-V alloys, III-V growth on silicon, and lattice-mismatched growth. His work includes demonstration of several world record-setting solar cell efficiencies. John is an author of over 100 scientific publications. He is a member of the executive committee of the American Association of Crystal Growth and has helped organize several crystal growth conferences.


Semiconductor Devices for Quantum Information Applications.

Andrew Shields, Toshiba Research Europe Limited,

Light Emitting Diodes containing a self-organised quantum dot as the emissive element may be used to generate single photons, as well as polarisation-entangled pairs.  Electrical injection of the recombining carriers has the advantage of negating the need for a pump laser and its awkward alignment with the dot, while potentially also allowing individual devices to be addressed in a quantum integrated circuit.  Moreover, the contacts may also be used to control several aspects of the emission.  For example, using sub-nanosecond voltage pulses it is possible to coherently control the dot states, allowing the wavefunction of the emitted single photons or entangled pairs to be manipulated.  Furthermore, indistinguishable photons may be generated from different dots, a prerequisite for scaling photonic approaches to quantum information processing, by tuning the emission wavelength of each dot with an applied voltage. Recent progress in using semiconductor devices for quantum communications and quantum logic gates will also be presented. 


Andrew Shields received a First Class Degree and PhD in Physics from Imperial College, London.  He was awarded a Royal Society Fellowship to work at the Max Planck Institute for Solid State Research in Stuttgart, before joining the permanent staff at Toshiba Research Europe in Cambridge in 1993, where he is currently Assistant Managing Director.  He is best known for R&D on semiconductor devices and their applications, having co-authored over 230 peer reviewed articles, generating over 4400 citations, and over 70 patent applications in the field.  He pioneered the use of quantum dots to generate single photon pulses, demonstrating a device described as the “world’s dimmest” LED, and more recently the first LED for entangled light.  Other research interests include high speed single photon and photon number detection using avalanche photodiodes.  His team developed the first quantum key distribution system with a range over 100km and the first with a sustained secure bit rate over 1 Mbit/sec. 

Optical Interconnects for Computer-com

Marc A. Taubenblatt, IBM Research:

Computing Systems are exponentially increasing their dependence on optical interconnects to meet their scaling bandwidth needs.  Steady increases in computation density have put pressure on the interconnect infrastructure to keep up. The requirements for these interconnects include a critical set of metrics, that historically have focused on cost, but increasingly consider power and density.  Furthermore, reliability (component and data) and latency must be considered as well.

Thus the path forward to increasing bandwidth  in these systems is becoming an increasingly complex set of trade-offs.  This talk will describe the major applications for optical interconnects in computer systems, the relative metrics for these applications and consider new technologies in this context.


Marc Taubenblatt is currently Senior Manager, Optical Communications and High Speed Test, at IBM's T.J. Watson Research Center, focusing on optical interconnects and high speed electrical packaging for computer systems, and test and innovative diagnostic techniques for high performance computer chips.  Marc has had responsibility for the IBM Research world wide optical interconnect strategy for the past 11 years.   He also manages a research program on advanced computing technology.  He received a BS degree in Electrical Engineering from Princeton University and MS and PhD degrees in Electrical Engineering from Stanford University.  Marc has been at IBM Research for over 26 years and is a member of the IBM Academy of Technology.




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