August 27-30, 2012
University of California
Santa Barbara, CA USA
On Sunday August 26, Two short courses will be presented.
Registration is separate for each of the two courses.
GaN Transistors: Physics
and Technology (1-3pm)
Associate Professor of Electrical Engineering
University of Notre Dame, Notre Dame, IN 46556 USA
GaN transistors are attractive for high-power RF electronics, and are becoming increasingly attractive for high-voltage switching. The advantages stem from the wide bandgaps, availability of heterostructures with large band offsets, and electronic polarization. Since the concept of polarization is relatively new in semiconductors, and yet, plays the central role in the design of high-performance GaN transistors, the goals of this short course will be to discuss
1) The concept of electronic polarization in semiconductors,
2) Effect of polarization in device electrostatics and transport,
3) How polarization has guided the design of high performance GaN HEMTs,
4) Open problems, and possible directions in the future.
InP HBT Circuits:
RF, Tera-hertz and Mixed-Signal Circuits (3:30-5:30pm)
MJ (Myung-Jun) Choe (email@example.com)
Munkyo Seo (firstname.lastname@example.org)
Teledyne Scientific Company, Thousand Oaks, CA, 91360 USA
Recent advances in InP HBT technologies have enabled design and implementation of 300-500+ GHz ICs, opening a pathway to fully integrated tera-hertz (0.3-3 THz) systems for imaging, radar and communication. At these frequencies, we face several fundamental design challenges: available active device gain is relatively low, while losses from passive devices are relatively high. Local interconnects become an essential circuit element, as overall circuit sizes are relatively large compared to a wavelength. Traditional analog-IC design style may not directly scale to sub-millimeter-wave frequencies, while traditional RF design style may not be optimal in terms of circuit size and operating bandwidth. For a successful IC design, a holistic design approach is therefore necessary, where device, circuit, and their electromagnetic environment are altogether considered from the early design phase.
In the first part of this class, the design and implementation of InP HBT ICs will be presented to illustrate such a design approach, including various transceiver building blocks and a single-chip phased-locked loop, operating at 300 GHz and beyond.
InP HBT technology has reached to a stage that high performance analog circuits can benefit from its superior device performance. The device and interconnect technology has become mature enough to lead to successful demonstrations of more complicated mixed-signal circuits with unprecedented performance. During the latter part of this short course, a digital-to-analog converter (DAC) is used as an example mixed-signal circuit that enjoys the high-speed operation and large-scale integration of today’s InP HBT technology, and we will discuss
1) DAC performance limitations,
2) A short review of DAC architectures ,
3) An example implementation of high-frequency high-dynamic range DAC,
4) Remaining issues and potential solutions to overcome the limitations.
Sponsors & Exhibitors