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Create the page "Geza" on this wiki! See also the search results found.

Page title matches

• Geza Kurczveil
  Personal page: http://geza.zenfolio.com <br>
  109 B (18 words) - 14:06, 6 March 2012

Page text matches

• People
  *[[Geza Kurczveil]]
  503 B (52 words) - 12:26, 28 June 2012
• Chips Table
  ...&nbsp; || SOIBuffer2R || &nbsp; || [[media:WG.xlsx | Process follower]] || Geza || &nbsp; || Testing in progress
  1 KB (131 words) - 13:43, 25 June 2010
• Process Hybrid Silicon
  | [[Protection layer definition]] || Geza || style="background:orange" | &nbsp; || - III-V delamination at edge <br> | [[Gap fill]] || Geza || style="background:orange" | &nbsp; || &nbsp; || &nbsp;
  11 KB (1,553 words) - 17:27, 2 October 2012
• Simulation/PICwave
  Mar 16: Geza Mar 17: Geza
  493 B (62 words) - 18:51, 4 February 2015
• OFC transportation
  | 3 || 9AM Monday || 0 || Geza || Daoxin, Martijn, Demis | 1 || Wednesday evening || 3 || Geza || Daryl
  1 KB (148 words) - 16:10, 8 March 2011
• Cleanroom Reports
  | SiN || ICP#2 ||SOI ||SiOxVert, recipe #101|| ~300nm/min|| &nbsp; || Geza || &nbsp; || 40sccm CHF3, 900/200W ICP/RF, 0.5Pa ...ICP#2 ||SOI ||Bowers SiOxVert etch # 101 ||~111 nm/min || MAY 27, 2010 || Geza || || &nbsp;
  8 KB (1,137 words) - 10:19, 1 November 2013
• Mask Order
  ...with a rib etch of 200 nm. If you must use metal alignment markers talk to Geza (so he can talk some sense into you).
  3 KB (589 words) - 12:16, 8 September 2014
• Device Run
  ...&nbsp; || SOIBuffer2R || &nbsp; || [[media:WG.xlsx | Process follower]] || Geza || &nbsp; || Testing in progress
  6 KB (842 words) - 21:19, 30 November 2012
• LASOR
  The mask file is too large (~200 Mb). See me (Geza) if you really want to see it.
  492 B (75 words) - 11:48, 11 April 2011
• 5-14B Autocorrelator
  * [[Media:Autocorrelator.docx‎ |manual (Geza's Cliffnotes)]]
  167 B (17 words) - 11:41, 7 February 2012
• Oscillator/Stabilization
  [[Media:Geza's wet chemistry.pdf|Etching File]]
  2 KB (324 words) - 16:46, 28 June 2012
• DUV Stepper
  | UV210 || D-RIE ||Si ||BOV_J_01||28 nm/min|| Nov 9, 2012 || Geza || - || Full 4" wafer covered in PR, ~1% Si exposed | UV210 || ICP#2 ||Si ||#101: SiOxVert||140 nm/min|| Nov 5, 2012 || Geza || - || SiO2 etch rate: 200 nm/min (?)
  3 KB (382 words) - 17:17, 12 November 2012