Difference between revisions of "EPHI"

From OptoelectronicsWiki
Jump to: navigation, search
(Oscillator Page)
(Oscillator Demo)
Line 78: Line 78:
  
 
== Oscillator Demo ==
 
== Oscillator Demo ==
[[Oscillator_page | Oscillator Page]]
+
[[Oscillator Page]]

Revision as of 09:00, 18 November 2012

Overview

EPHI aims to integrate ultra low-loss waveguides (SiN/SiO2 on Si developed in IPHOD) and high-Q resonators with the hybrid Silicon platform to produce a low-noise oscillator.

Runs

Shuttle run 1 / Dev2
The first fabrication run (Shuttle Run 1 / Dev2) is an investigative short-loop to determine the best design space for tapers and rib widths in gain elements, as well as to try out the new simplified process proposed by Mike Davenport. The results of this run feed into upcoming designs for both EPHI and SWEEPER. The mask set was designed by Martijn Heck. The process was designed by Mike Davenport and Sudha Srinivasan, with the proton implant spec'd by Jon Doylend. Three epi designs were used, a modified version of LASOR2, a new epi for SWEEPER, and the standard Landmark epi. Fabrication was carried out by Mike Davenport, Jon Peters, and Sudha Srinivasan. Testing was carried out by Mike Davenport, Sudha Srinivasan, and Jon Doylend. The run is coordinated during Friday HSP meetings between all five participants.

Mask set
Mask splits

Processing

EPHI Shuttle run-1 / Dev2 (SOA only)

Complete Process Follower

Modules for Process A - Lead Process
Process ID Process flow Process follower Description
WG etch Complete Flow A.02‎ Si WG etch‎ Rib waveguide formation, Alignment marks.
VC etch   Si VC etch Vertical channel etch
Bonding   Bonding Plasma assisted wafer bonding guide - Author:Michael D
InP-mesa etch   P-mesa etch Mesa etch to top SCH layer
QW wet etch   QW etch Active layer wet etch
N-metal deposition   N-metal deposition N-metal (Ni/Ge/Au/Ni/Au)
Oxide Planarization & Via formation   Planarization & Via etch 1um oxide deposition & via etch
P-/Probepad metal deposition   Probepad metallization P-/probepad metal stack (Pd/Ti/Pd/Au)



Complete Process Follower

Modules for Process B- Catch-up Process
Process ID Process flow Process follower Description
WG etch Complete Flow‎ B Si WG etch‎ Rib waveguide formation, Alignment marks.
VC etch   Si VC etch Vertical channel etch
Bonding   Bonding Plasma assisted wafer bonding guide - Author:Michael D
P-metal deposition   p-metal deposition P-metal stack (Pd/W)
InP-mesa etch   P-mesa etch Mesa etch to top SCH layer
QW wet etch   QW etch Active layer wet etch
N-metal deposition   N-metal deposition N-metal (Ni/Ge/Au/Ni/Au)
Oxide Planarization & Via formation   Planarization & Via etch 1um oxide deposition & via etch
Probepad metal deposition   Probepad metallization Probepad metal stack (Pd/Ti/Pd/Au)



Characterization

Dev2 SOA shortloop - look-ahead (no proton implant)
look-ahead (no proton implant)


Dev2 SOA shortloop - after proton implant
first chips (proton implanted on column 3)

Oscillator Demo

Oscillator Page