Difference between revisions of "AWG receiver"
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(Created page with "The AWG receiver was a 20 channel AWG with 20 HSP photodiodes on Si nanowires (220nm height). == Design == == Processing == == Reports and presentations ==") |
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== Processing == | == Processing == | ||
| + | [[media:AWG_Bond_Defects.pptx|Bonding defects]] | ||
| + | [[media:AWG_QW_Misalign.pptx|Quantum well lithography misalignment]] | ||
| + | [[media:AWG_Mesa_Align.pptx|Mesa lithography misalignment]] | ||
| − | == | + | [[media:INGaAsP_Wet_Etch.pptx| Wet etch difficulties]] |
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| + | |||
| + | == Data == | ||
| + | |||
| + | [[media:AWG_20080606.ppt|AWG pre-bond spectra]] | ||
| + | |||
| + | [[media:090709_IV.zip|Photodetector IV curves]] | ||
| + | |||
| + | [[media:AWG_Aug21_molly.ppt|AWG post-bond spectra]] (measured with on-chip PDs) | ||
Revision as of 13:36, 31 March 2011
The AWG receiver was a 20 channel AWG with 20 HSP photodiodes on Si nanowires (220nm height).
Design
Processing
Quantum well lithography misalignment
Data
AWG post-bond spectra (measured with on-chip PDs)
