Difference between revisions of "Cleanroom Reports"

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| SiO2 and Si || ICP#2 ||Si ||SF6-O2 ICP2 #124 ||280-360nm/m|| JUN 08, 2012 || Jon Peters || [[media:20120608_SF6_Silicon_etch.pptx]] || 30/10sccm SF6/O2, 400/50W ICP/RF, 1.0 Pa
 
| SiO2 and Si || ICP#2 ||Si ||SF6-O2 ICP2 #124 ||280-360nm/m|| JUN 08, 2012 || Jon Peters || [[media:20120608_SF6_Silicon_etch.pptx]] || 30/10sccm SF6/O2, 400/50W ICP/RF, 1.0 Pa
 
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| Sputtered W || ICP#1/2 ||Si ||SF6-CF4, #197/#174 ICP#1/2) ||~70 nm/m|| NOV 02, 2012 || Geza || || 5/5 sccm SF6/CF4, 600/20W ICP/RF
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| Sputtered W || ICP#1/2 ||Si ||SF6-CF4, #197/#174 ICP#1/2) ||~70 nm/m|| NOV 02, 2012 || Geza || || 5/5 sccm SF6/CF4, 600/20W ICP/RF, selectivity to InGaAs > 10:1
 
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Revision as of 13:08, 2 November 2012

  • List of etch and deposit rate for cleanroom tools. Each file includes the recipe being used and the calibrated etch rate.
  • Please update yours if you run any calibration so that everyone can keep track of them.
  • Wet etch recipes:
http://www.cleanroom.byu.edu/wet_etch.phtml
http://terpconnect.umd.edu/~browns/wetetch.html
  • Refractive indexes:
http://refractiveindex.info/


Dry Etch

Etched material Equipment Substrate Recipe Latest etch rate Latest update date Latest update by Calib. file Note
Si ICP#2 SOI Bowers si etch # 127 4nm/s JUN 12, 2010 Jon Peters ICP#2 si etch rate 40/20sccm BCl3/Cl2, 500/120W ICP/RF, 2.5Pa
SiO2 ICP#2 SOI SiOxVert, recipe #101 ~252nm/min NOV 9, 2010; Molly Media:SiO2_Vert.pdf 40sccm CHF3, 900/200W ICP/RF, 0.5Pa
SiN ICP#2 SOI SiOxVert, recipe #101 ~300nm/min   Geza   40sccm CHF3, 900/200W ICP/RF, 0.5Pa
SiN PE-CVD RIE#2 SOI MHA, 4/20/10 ~7.4nm/min Sept 26, 2011; JonP   Methane/Hydrogen/Ar, 500V, , 125mT. Etched for 10 min using 955 1.8 resist as etch mask and then measured delta post strip. Tried using Pd/Ti/Pd/Au as etch mask on second piece but gold gone post etch and delta >300nm when it should be <300nm
Cured SU8 (260 C for 30 min) ICP#2 SOI Bowers SiOxVert etch # 101 ~111 nm/min MAY 27, 2010 Geza  
Nano Oxide/Nitride Etch ICP#2 nano etch # 104 MAY 27, 2012 Jock media:ICP2_CF4-CHF3-O2_Deep_Nano_Etch.pptx  
Cured SU8 (260 C for 30 min) ICP#2 SOI aSi SF6 based etch # 156 (200W) ~275 nm/min JUN 1, 2010 Geza  
Cured SU8 (260 C for 30 min) ICP#2 SOI aSi SF6 based etch # 156 (200W + 40 sccm O2) ~465 nm/min JUN 1, 2010 Geza  
Cured SU8 (260 C for 30 min) ICP#2 SOI aSi SF6 based etch # 156 (300W + 40 sccm O2) ~690 nm/min JUN 1, 2010 Geza Use cured (115C/15min) SPR220-7 as mask, mask etched at ~550nm/min. Carefully check mask for cracking.
Cured BCB (250 C for 60 min) ICP#1 SOI CF4 based etch # 308 (1000W + 50:200 sccm CF4:O2) ~400 nm/min JUN 1, 2012 Jared H
SiO2 and Si ICP#2 Si SF6-O2 ICP2 #124 280-360nm/m JUN 08, 2012 Jon Peters media:20120608_SF6_Silicon_etch.pptx 30/10sccm SF6/O2, 400/50W ICP/RF, 1.0 Pa
Sputtered W ICP#1/2 Si SF6-CF4, #197/#174 ICP#1/2) ~70 nm/m NOV 02, 2012 Geza 5/5 sccm SF6/CF4, 600/20W ICP/RF, selectivity to InGaAs > 10:1

Wet Etch

Etched material Solution Mask Latest etch rate Latest update date Latest update by Calib. file Note
Thermal oxide BHF PR or dielectric ~100nm/min        
PECVD oxide BHF PR or dielectric ~225nm/min        
PECVD SiN BHF   ~30-50nm/min   Jon P.    
PECVD SiN HF   ~500nm/min   Geza   PR does not survive as a mask
Cured SU8 (260 C for 30 min) Piranha (150mL H2SO4 + 50mL H2O2)   ~500nm/s (v. fast) MAY 27, 2010 Geza   Piranha does not attack SiN or Gold, suspect heavy undercut but have no data
Titanium (sputtered) BHF PR ~3.33nm/s (order of magnitude estimate) JULY 5, 2010 Geza   If you etch for >5min, cure PR at 115C for 15min prior to etch
Pd Au etchant (TFA) PR ~1.8nm/s Oct 15, 2012 Geza   PR cured at 115 C for 5 min prior to etch, etch stops on InGaAs
Ta2O5 HF no mask used ~100nm/s JUNE 1, 2011 Geza    
Sputtered W H2O2 (20 C) no mask used ~50 nm/min (~100 nm/min @ 50 C) Nov 1, 2012 Geza   unpatterned samples etched fine (no bubbling), patterned samples did not etch (lots of bubbling)

Dielectric Deposit

Material Equipment Latest deposit rate Latest update date Latest update by Calib. file Note
SiN PECVD          
SiO2 PECVD          
Ta2O5 Ebeam #2 1A/sec   Hui-Wen   Deposit 203nm on blank Si sample (do BHF dip before deposition), measure index and thickness on ellipsometer (Filmetrics is not good for this), calculate required thickness from index (http://optoelectronics.ece.ucsb.edu/oewiki/index.php/Simulation/multiFilm), deposit dielectric on both facets (one at a time). Generally need 203nm for 7 degree facets, Ta2O5 index ~2.0, purple color.
SrF2 Ebeam #2 2-5A/sec   Jon P   Per Je-Hyeong on Nov 16, 2010. Target 200 nm, measured 350 nm. Target 300 nm, measured 450 nm. For liftoff process only use 1165-ISO for liftoff because DI will dissolve SrF2 in 2-3 minutes.


Lithography

Equipment Resist Polarity Hardmask Substrate Pre-Exposure Bake Exposure Dose Focus Post-Exposure Bake Development Report Author
Autostepper SPR 955 0.9 Positive 200nm PECVD Oxide GaAs (should work with Si, SOI, and InP also) 95C,90s ~.42s report variable 0 110C,90s MIF726,40s Over-exposure Pattern Reduction Jock


Thermal oxidation

Dry/wet Temperature Material File link
Wet 1050C Si File:Wetox 1050.xlsx
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