Difference between revisions of "EPHI"
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EPHI aims to integrate ultra low-loss waveguides (SiN/SiO2 on Si developed in IPHOD) and high-Q resonators with the hybrid Silicon platform to produce a low-noise oscillator. | EPHI aims to integrate ultra low-loss waveguides (SiN/SiO2 on Si developed in IPHOD) and high-Q resonators with the hybrid Silicon platform to produce a low-noise oscillator. | ||
− | |||
− | == | + | == Runs == |
<b>Shuttle run 1 / Dev2</b><br> | <b>Shuttle run 1 / Dev2</b><br> | ||
+ | The first fabrication run (Shuttle Run 1 / Dev2) is an investigative short-loop to determine the best design space for tapers and rib widths in gain elements, as well as to try out the new simplified process proposed by Mike Davenport. The results of this run feed into upcoming designs for both EPHI and SWEEPER. | ||
+ | The mask set was designed by Martijn Heck. The process was designed by Mike Davenport and Sudha Srinivasan, with the proton implant spec'd by Jon Doylend. Three epi designs were used, a modified version of LASOR2, a new epi for SWEEPER, and the standard Landmark epi. Fabrication was carried out by Mike Davenport, Jon Peters, and Sudha Srinivasan. Testing was carried out by Mike Davenport, Sudha Srinivasan, and Jon Doylend. The run is coordinated during Friday HSP meetings between all five participants.<br> | ||
+ | |||
[[Media:Dev-2.1_-_v5.gds | Mask set]]<br> | [[Media:Dev-2.1_-_v5.gds | Mask set]]<br> | ||
[[Media:E-Phi_dev-2.pptx | Mask splits]] | [[Media:E-Phi_dev-2.pptx | Mask splits]] | ||
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! Process ID !! Process flow !! Process follower !! Description | ! Process ID !! Process flow !! Process follower !! Description | ||
|- | |- | ||
− | | WG etch || [[media: | + | | WG etch || [[media:E-Phi_dev-2 - v2.pptx | Complete Flow A.02]] || [[media:WG Module.docx | Si WG etch]] || Rib waveguide formation, Alignment marks. |
|- | |- | ||
| VC etch || || [[media:VC_module.docx | Si VC etch]] || Vertical channel etch | | VC etch || || [[media:VC_module.docx | Si VC etch]] || Vertical channel etch | ||
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<b>Dev2 SOA shortloop - after proton implant</b><BR> | <b>Dev2 SOA shortloop - after proton implant</b><BR> | ||
[[Media:first_chips_(proton_implanted_on_column_3).zip | first chips (proton implanted on column 3)]]<BR> | [[Media:first_chips_(proton_implanted_on_column_3).zip | first chips (proton implanted on column 3)]]<BR> | ||
+ | |||
+ | <b>Dev1 (?) passive MMI</b><BR> | ||
+ | [[Media: 2012_05_08_EPHI_MMI.pptx| Slides]]<BR> | ||
+ | [[Media: E-PHI.xlsx| Raw data]]<BR> | ||
+ | |||
+ | == Oscillator Demo == | ||
+ | [[Oscillator_page | Oscillator Page]] |
Latest revision as of 16:52, 21 November 2012
Overview[edit]
EPHI aims to integrate ultra low-loss waveguides (SiN/SiO2 on Si developed in IPHOD) and high-Q resonators with the hybrid Silicon platform to produce a low-noise oscillator.
Runs[edit]
Shuttle run 1 / Dev2
The first fabrication run (Shuttle Run 1 / Dev2) is an investigative short-loop to determine the best design space for tapers and rib widths in gain elements, as well as to try out the new simplified process proposed by Mike Davenport. The results of this run feed into upcoming designs for both EPHI and SWEEPER.
The mask set was designed by Martijn Heck. The process was designed by Mike Davenport and Sudha Srinivasan, with the proton implant spec'd by Jon Doylend. Three epi designs were used, a modified version of LASOR2, a new epi for SWEEPER, and the standard Landmark epi. Fabrication was carried out by Mike Davenport, Jon Peters, and Sudha Srinivasan. Testing was carried out by Mike Davenport, Sudha Srinivasan, and Jon Doylend. The run is coordinated during Friday HSP meetings between all five participants.
Processing[edit]
EPHI Shuttle run-1 / Dev2 (SOA only)
Process ID | Process flow | Process follower | Description |
---|---|---|---|
WG etch | Complete Flow A.02 | Si WG etch | Rib waveguide formation, Alignment marks. |
VC etch | Si VC etch | Vertical channel etch | |
Bonding | Bonding | Plasma assisted wafer bonding guide - Author:Michael D | |
InP-mesa etch | P-mesa etch | Mesa etch to top SCH layer | |
QW wet etch | QW etch | Active layer wet etch | |
N-metal deposition | N-metal deposition | N-metal (Ni/Ge/Au/Ni/Au) | |
Oxide Planarization & Via formation | Planarization & Via etch | 1um oxide deposition & via etch | |
P-/Probepad metal deposition | Probepad metallization | P-/probepad metal stack (Pd/Ti/Pd/Au) |
Process ID | Process flow | Process follower | Description |
---|---|---|---|
WG etch | Complete Flow B | Si WG etch | Rib waveguide formation, Alignment marks. |
VC etch | Si VC etch | Vertical channel etch | |
Bonding | Bonding | Plasma assisted wafer bonding guide - Author:Michael D | |
P-metal deposition | p-metal deposition | P-metal stack (Pd/W) | |
InP-mesa etch | P-mesa etch | Mesa etch to top SCH layer | |
QW wet etch | QW etch | Active layer wet etch | |
N-metal deposition | N-metal deposition | N-metal (Ni/Ge/Au/Ni/Au) | |
Oxide Planarization & Via formation | Planarization & Via etch | 1um oxide deposition & via etch | |
Probepad metal deposition | Probepad metallization | Probepad metal stack (Pd/Ti/Pd/Au) |
Characterization[edit]
Dev2 SOA shortloop - look-ahead (no proton implant)
look-ahead (no proton implant)
Dev2 SOA shortloop - after proton implant
first chips (proton implanted on column 3)
Dev1 (?) passive MMI
Slides
Raw data