Difference between revisions of "EPHI"

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EPHI aims to integrate ultra low-loss waveguides (SiN/SiO2 on Si developed in IPHOD) and high-Q resonators with the hybrid Silicon platform to produce a low-noise oscillator.
 
EPHI aims to integrate ultra low-loss waveguides (SiN/SiO2 on Si developed in IPHOD) and high-Q resonators with the hybrid Silicon platform to produce a low-noise oscillator.
  
 +
== Runs ==
  
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<b>Shuttle run 1 / Dev2</b><br>
 +
The first fabrication run (Shuttle Run 1 / Dev2) is an investigative short-loop to determine the best design space for tapers and rib widths in gain elements, as well as to try out the new simplified process proposed by Mike Davenport.  The results of this run feed into upcoming designs for both EPHI and SWEEPER. 
 +
The mask set was designed by Martijn Heck.  The process was designed by Mike Davenport and Sudha Srinivasan, with the proton implant spec'd by Jon Doylend. Three epi designs were used, a modified version of LASOR2, a new epi for SWEEPER, and the standard Landmark epi. Fabrication was carried out by Mike Davenport, Jon Peters, and Sudha Srinivasan.  Testing was carried out by Mike Davenport, Sudha Srinivasan, and Jon Doylend.  The run is coordinated during Friday HSP meetings between all five participants.<br>
  
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[[Media:Dev-2.1_-_v5.gds | Mask set]]<br>
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== Simulations ==
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[[Media:E-Phi_dev-2.pptx | Mask splits]]
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...
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== Processing ==
 
== Processing ==
  
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'''Dev2 (Hybrid Silicon only for SOA tests)'''<br>
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<b>EPHI Shuttle run-1 / Dev2 (SOA only)</b>
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'''RUN 3.1 (active Silicon only for fast phase modulator tests)'''<br>
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[[Media:SWEEPER_3.1_Gratings.zip]]
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[[media:Process follower.docx | Complete Process Follower]]
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{| border="3"
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|+ '''Modules for Process A - Lead Process'''
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|- style="background:red; color:white"
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! Process ID !! Process flow !! Process follower !! Description
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|-
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| WG etch || [[media:E-Phi_dev-2 - v2.pptx‎ | Complete Flow A.02‎]] || [[media:WG Module.docx | Si WG etch‎]] || Rib waveguide formation, Alignment marks.
 +
|-
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| VC etch || &nbsp; || [[media:VC_module.docx | Si VC etch]] || Vertical channel etch
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|-
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| Bonding || &nbsp; || [[Media:Bonding short.docx‎ | Bonding]] || [[Media:Bonding process.docx‎ | Plasma assisted wafer bonding guide - Author:Michael D]]
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|-
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| InP-mesa etch || &nbsp; || [[Media:RIE2 etch.docx‎ | P-mesa etch]] || Mesa etch to top SCH layer
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|-
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| QW wet etch || &nbsp; || [[Media:QW wet etch.docx‎ | QW etch]] || Active layer wet etch
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|-
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| N-metal deposition || &nbsp; || [[Media:n metal dep.docx‎ | N-metal deposition]] || N-metal (Ni/Ge/Au/Ni/Au)
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|-
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| Oxide Planarization & Via formation || &nbsp; || [[Media:planarize and via etch.docx‎ | Planarization & Via etch]] || 1um oxide deposition & via etch
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|-
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| P-/Probepad metal deposition  || &nbsp; || [[Media:Probepad p-metal dep.docx‎ | Probepad metallization]] || P-/probepad metal stack (Pd/Ti/Pd/Au)
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|-
  
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|}
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<br><br>
 +
[[media:Process follower.docx | Complete Process Follower]]
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{| border="3"
 +
|+ '''Modules for Process B- Catch-up Process'''
 +
|- style="background:red; color:white"
 +
! Process ID !! Process flow !! Process follower !! Description
 +
|-
 +
| WG etch || [[media:Dev-2.2_process_flows.pptx‎ | Complete Flow‎ B]] || [[media:WG Module.docx | Si WG etch‎]] || Rib waveguide formation, Alignment marks.
 +
|-
 +
| VC etch || &nbsp; || [[media:VC_module.docx | Si VC etch]] || Vertical channel etch
 +
|-
 +
| Bonding || &nbsp; || [[Media:Bonding short.docx‎ | Bonding]] || [[Media:Bonding process.docx‎ | Plasma assisted wafer bonding guide - Author:Michael D]]
 +
|-
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| P-metal deposition  || &nbsp; || [[media:p metal deposition.docx | p-metal deposition]] || P-metal stack (Pd/W)
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|-
 +
| InP-mesa etch || &nbsp; || [[Media:RIE2 etch.docx‎ | P-mesa etch]] || Mesa etch to top SCH layer
 +
|-
 +
| QW wet etch || &nbsp; || [[Media:QW wet etch.docx‎ | QW etch]] || Active layer wet etch
 +
|-
 +
| N-metal deposition || &nbsp; || [[Media:n metal dep.docx‎ | N-metal deposition]] || N-metal (Ni/Ge/Au/Ni/Au)
 +
|-
 +
| Oxide Planarization & Via formation || &nbsp; || [[Media:planarize and via etch.docx‎ | Planarization & Via etch]] || 1um oxide deposition & via etch
 +
|-
 +
| Probepad metal deposition  || &nbsp; || [[Media:Probepad p-metal dep.docx‎ | Probepad metallization]] || Probepad metal stack (Pd/Ti/Pd/Au)
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|-
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|}
  
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<br><br>
  
 
== Characterization ==
 
== Characterization ==
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<b>Dev2 SOA shortloop - look-ahead (no proton implant)</b><BR>
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[[Media:look-ahead_(no_proton_implant).zip | look-ahead (no proton implant)]]<BR>
  
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<u><b>aSI PHASE MODULATOR RUN - Sweeper 3.1</b></u> <br>
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<br>
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'''Run 1'''
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<b>Dev2 SOA shortloop - after proton implant</b><BR>
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[[Media:first_chips_(proton_implanted_on_column_3).zip | first chips (proton implanted on column 3)]]<BR>
  
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Step -         Description        - Sample Names - File
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<b>Dev1 (?) passive MMI</b><BR>
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[[Media: 2012_05_08_EPHI_MMI.pptx| Slides]]<BR>
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[[Media: E-PHI.xlsx| Raw data]]<BR>
  
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3.3  - Rib litho pics before hard mask etch:  [[File:rib litho pics.zip]]
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== Oscillator Demo ==
 +
[[Oscillator_page | Oscillator Page]]

Latest revision as of 16:52, 21 November 2012

Overview[edit]

EPHI aims to integrate ultra low-loss waveguides (SiN/SiO2 on Si developed in IPHOD) and high-Q resonators with the hybrid Silicon platform to produce a low-noise oscillator.

Runs[edit]

Shuttle run 1 / Dev2
The first fabrication run (Shuttle Run 1 / Dev2) is an investigative short-loop to determine the best design space for tapers and rib widths in gain elements, as well as to try out the new simplified process proposed by Mike Davenport. The results of this run feed into upcoming designs for both EPHI and SWEEPER. The mask set was designed by Martijn Heck. The process was designed by Mike Davenport and Sudha Srinivasan, with the proton implant spec'd by Jon Doylend. Three epi designs were used, a modified version of LASOR2, a new epi for SWEEPER, and the standard Landmark epi. Fabrication was carried out by Mike Davenport, Jon Peters, and Sudha Srinivasan. Testing was carried out by Mike Davenport, Sudha Srinivasan, and Jon Doylend. The run is coordinated during Friday HSP meetings between all five participants.

Mask set
Mask splits

Processing[edit]

EPHI Shuttle run-1 / Dev2 (SOA only)

Complete Process Follower

Modules for Process A - Lead Process
Process ID Process flow Process follower Description
WG etch Complete Flow A.02‎ Si WG etch‎ Rib waveguide formation, Alignment marks.
VC etch   Si VC etch Vertical channel etch
Bonding   Bonding Plasma assisted wafer bonding guide - Author:Michael D
InP-mesa etch   P-mesa etch Mesa etch to top SCH layer
QW wet etch   QW etch Active layer wet etch
N-metal deposition   N-metal deposition N-metal (Ni/Ge/Au/Ni/Au)
Oxide Planarization & Via formation   Planarization & Via etch 1um oxide deposition & via etch
P-/Probepad metal deposition   Probepad metallization P-/probepad metal stack (Pd/Ti/Pd/Au)



Complete Process Follower

Modules for Process B- Catch-up Process
Process ID Process flow Process follower Description
WG etch Complete Flow‎ B Si WG etch‎ Rib waveguide formation, Alignment marks.
VC etch   Si VC etch Vertical channel etch
Bonding   Bonding Plasma assisted wafer bonding guide - Author:Michael D
P-metal deposition   p-metal deposition P-metal stack (Pd/W)
InP-mesa etch   P-mesa etch Mesa etch to top SCH layer
QW wet etch   QW etch Active layer wet etch
N-metal deposition   N-metal deposition N-metal (Ni/Ge/Au/Ni/Au)
Oxide Planarization & Via formation   Planarization & Via etch 1um oxide deposition & via etch
Probepad metal deposition   Probepad metallization Probepad metal stack (Pd/Ti/Pd/Au)



Characterization[edit]

Dev2 SOA shortloop - look-ahead (no proton implant)
look-ahead (no proton implant)


Dev2 SOA shortloop - after proton implant
first chips (proton implanted on column 3)

Dev1 (?) passive MMI
Slides
Raw data

Oscillator Demo[edit]

Oscillator Page

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