Difference between revisions of "Modulator"
From OptoelectronicsWiki
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[[Media:Hybrid_optical_EAM_1550nm_polarization_structure_up_stand.m|Optical mode calculation (for COMSOL), support tilt QW sidewall]] | [[Media:Hybrid_optical_EAM_1550nm_polarization_structure_up_stand.m|Optical mode calculation (for COMSOL), support tilt QW sidewall]] | ||
| − | [[Media:HybridWaveguideCrossSection. | + | [[Media:HybridWaveguideCrossSection.zip|Optical mode calculation (Fimmwave+Jaredwave), limited to vertical sidewall]] |
| − | [[Media: | + | [[Media:HybridEAM11_Taper.zip|Taper simulation input script (Fimmwave+Jaredwave), baseline/short pMesa/no pMesa]] |
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== Process == | == Process == | ||
Revision as of 16:36, 16 June 2012
The objective is to develop high speed, low driving voltage, high extinction ratio modulator based on hybrid silicon platform.
Contents
The first generation
Time: 2010
Process
xls file: Media:EAM10_process.xls
slides: Media:EAM10_process.pptx
Mask
Mask files: Media: EAM10_Mask.zip
Related Papers
http://optoelectronics.ece.ucsb.edu/profile/yongbo-tang
The second generation
Time: 2011
Design
Epitaxy 1250: Specs of the 1250nm EPI Epitaxy 1470: Specs of the 1470nm EPI
Structure:
Simulation: Optical mode calculation (for COMSOL), support tilt QW sidewall Optical mode calculation (Fimmwave+Jaredwave), limited to vertical sidewall Taper simulation input script (Fimmwave+Jaredwave), baseline/short pMesa/no pMesa
Process
xls file: Media:EAM11_process.xls
slides: Media:EAM11_process_flow.pptx
Mask
Mask file: EAM11 Mask Final/revised on 20111128
Report
Q1 report: Study of Integrated Hybrid Silicon Modulators Q1 slides: Comparison of different hybrid modulator design
Presentation
OFC2012：1.3μm Hybrid Silicon Electroabsorption Modulator with Bandwidth beyond 67 GHz OI2012：1.3μm Lumped Hybrid Silicon Electroabsorption Modulator under 1Vpp-Operation
