Difference between revisions of "Process Hybrid Silicon"
From OptoelectronicsWiki
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{| border="3" | {| border="3" | ||
|+ '''Hybrid Silicon Process Modules''' | |+ '''Hybrid Silicon Process Modules''' | ||
− | |- style="background: | + | |- style="background:slategrey; color:white" |
! Module !! Manager !! Status !! Description | ! Module !! Manager !! Status !! Description | ||
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| [[Dice and cleave]] || Jared || style="background:lime" | || | | [[Dice and cleave]] || Jared || style="background:lime" | || | ||
|- | |- | ||
− | | [[SOI waveguide definition]] || Sudha || style="background: | + | | [[SOI waveguide definition]] || Sudha || style="background:orang" | || |
|- | |- | ||
− | | [[SOI grating definition]] || Jock || style="background: | + | | [[SOI grating definition]] || Jock || style="background:orange" | || |
|- | |- | ||
| [[SOI actives definition]] || Jon D. || style="background:red" | || | | [[SOI actives definition]] || Jon D. || style="background:red" | || | ||
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| [[Vertical channel definition]] || Sudha || style="background:lime" | || | | [[Vertical channel definition]] || Sudha || style="background:lime" | || | ||
|- | |- | ||
− | | [[Protection layer definition]] || Geza || style="background: | + | | [[Protection layer definition]] || Geza || style="background:orange" | || |
|- | |- | ||
− | | [[Quantum well intermixing]] || Sid || style="background: | + | | [[Quantum well intermixing]] || Sid || style="background:orange" | || |
|- | |- | ||
− | | [[Wafer bonding]] || Jon P., Di || style="background: | + | | [[Wafer bonding]] || Jon P., Di || style="background:orange" | || |
|- | |- | ||
− | | [[Gap fill]] || Geza || style="background: | + | | [[Gap fill]] || Geza || style="background:orange" | || |
|- | |- | ||
− | | [[P-mesa definition]] || Geza || style="background: | + | | [[P-mesa definition]] || Geza || style="background:orange" | || |
|- | |- | ||
− | | [[Lower SCH definition]] || Geza || style="background: | + | | [[Lower SCH definition]] || Geza || style="background:orange" | || |
|- | |- | ||
| [[N-InP definition]] || Geza || style="background:red" | || | | [[N-InP definition]] || Geza || style="background:red" | || | ||
|- | |- | ||
− | | [[N-metal definition]] || Sid || style="background: | + | | [[N-metal definition]] || Sid || style="background:orange" | || |
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| [[P-metal definition]] || Jock, Sid || style="background:red" | || | | [[P-metal definition]] || Jock, Sid || style="background:red" | || | ||
|- | |- | ||
− | | [[Ion implantation]] || Sid || style="background: | + | | [[Ion implantation]] || Sid || style="background:orange" | || |
|- | |- | ||
− | | [[Via definition]] || Jock || style="background: | + | | [[Via definition]] || Jock || style="background:orange" | || |
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| [[Probe metal definition]] || Sid || style="background:lime" | || | | [[Probe metal definition]] || Sid || style="background:lime" | || | ||
|- | |- | ||
− | | [[Remove III/V in gap]] || Geza || style="background: | + | | [[Remove III/V in gap]] || Geza || style="background:orange" | || |
|- | |- | ||
| [[Dice and polish]] || Jared, Geza || style="background:lime" | || | | [[Dice and polish]] || Jared, Geza || style="background:lime" | || | ||
|- | |- | ||
− | | [[Initial standard wafer testing]] || Martijn || style="background:lime" | || | + | | [[Initial standard wafer testing]] || Martijn || style="background:lime" | || Blabla <br> bla bla |
|- | |- | ||
+ | |} | ||
+ | <br> | ||
+ | <br> | ||
+ | <span style="background:lime"> ___ </span> Low risk: >95% yield, established process module; <br> | ||
+ | <span style="background:orange"> ___ </span> Medium risk: ~50% - 95% yield, relatively new process module or minor issues; <br> | ||
+ | <span style="background:red"> ___ </span> High risk: <50% yield, non-established process or major issues. <br> | ||
+ | <br> | ||
+ | <br> | ||
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==Old process followers== | ==Old process followers== |
Revision as of 20:18, 10 November 2011
Standardized Process Follower
Module | Manager | Status | Description |
---|---|---|---|
Initial wafer check | |||
Dice and cleave | Jared | ||
SOI waveguide definition | Sudha | ||
SOI grating definition | Jock | ||
SOI actives definition | Jon D. | ||
Vertical channel definition | Sudha | ||
Protection layer definition | Geza | ||
Quantum well intermixing | Sid | ||
Wafer bonding | Jon P., Di | ||
Gap fill | Geza | ||
P-mesa definition | Geza | ||
Lower SCH definition | Geza | ||
N-InP definition | Geza | ||
N-metal definition | Sid | ||
P-metal definition | Jock, Sid | ||
Ion implantation | Sid | ||
Via definition | Jock | ||
Probe metal definition | Sid | ||
Remove III/V in gap | Geza | ||
Dice and polish | Jared, Geza | ||
Initial standard wafer testing | Martijn | Blabla bla bla |
___ Low risk: >95% yield, established process module;
___ Medium risk: ~50% - 95% yield, relatively new process module or minor issues;
___ High risk: <50% yield, non-established process or major issues.
Old process followers
Process ID | Version | Process flow | Process follower | Description |
---|---|---|---|---|
SP-PWD | Si WG etch | Si WG etch | Single etch-step SOI process; passive components | |
SP-VC | Si VC etch | Vertical channel etch | ||
HSP-METCH | Mesa etch | Forms mesa: see page for optimization efforts | ||
HSP-QW | III-V QW etch | Quantum well etch | ||
HSP-NETCH | n-layer etch | Remove n-layer to expose Si | ||
HSP-PTLM | p-TLM step | An additional process step is necessary to pattern p-TLM structures | ||
HSP-METAL | thin metal | Thin metal deposition | ||
HSP-PP | Probe pad deposition | Pattern and deposit probe metal | ||
Wafer bonding | Bonding | Beginner's guide to plasma assisted wafer bonding | ||
Wafer bonding II | direct wafer bonding | O2 plasma assisted wafer bonding (rev. 2008) | ||
Non-planar wafer bonding | non-planar bonding | Non-planar wafer bonding for bonding multiple epis to a single Si piece (see Jon Geske's thesis) | ||
TLM only | TLM only | Post-bond process for use with a TLM-only mask set |
Process ID | Version | Process flow | Process follower | Description |
---|---|---|---|---|
PHASER | 2 | PHASER | PHASER | PHASER (SOAs, thermal phase tuning pads, MMIs) process flow. Alignment mark coordinates |
Epump 2 | process flow | Epump 2 | Mostly designed for lasers, revised 4/6/07. Starts after WG and VC etches. | |
Self-aligned rev. 2 | process flow | self rev. 2 | Self-aligned process, starts after substrate removal, revised 2007. Contains PR spin speeds and exposure times for Stepper (6300) |
Check the Device Run page for more process followers, mask layout files, etc.
Process ID | Version | Process flow | Process follower | Description |
---|---|---|---|---|
PHASER | 1 | PHASER gen 1 | PHASER (SOAs, thermal phase tuning pads, MMIs) process flow. | |
Epump 2 | process flow | Epump 2 | Mostly designed for lasers, revised 4/6/07. Starts after WG and VC etches. | |
Si WG etch | 1 | WG etch | ca. 2008 Si waveguide etch process | |
Si WG etch | 2 | WG etch | Si waveguide etch process with gratings, PR reflow, and vertical channels |