Difference between revisions of "Modulator"
From OptoelectronicsWiki
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Q1 slides: [[Media:comparison_of_different_modulator_design_v1p5.pptx|Comparison of different hybrid modulator design]] | Q1 slides: [[Media:comparison_of_different_modulator_design_v1p5.pptx|Comparison of different hybrid modulator design]] | ||
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| + | == Presentation == | ||
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| + | [[Media:OFC2012_Y_Tang_v2.2.pptx|OFC2012：1.3μm Hybrid Silicon Electroabsorption Modulator with Bandwidth beyond 67 GHz]] | ||
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| + | [[Media:OI2012_Y_Tang.pptx|OI2012：1.3μm Lumped Hybrid Silicon Electroabsorption Modulator under 1Vpp-Operation]] | ||
== Related Papers == | == Related Papers == | ||
http://optoelectronics.ece.ucsb.edu/profile/yongbo-tang | http://optoelectronics.ece.ucsb.edu/profile/yongbo-tang | ||
Revision as of 16:15, 16 June 2012
The objective is to develop high speed, low driving voltage, high extinction ratio modulator based on hybrid silicon platform.
Contents
The first generation
Time: 2010
Process
xls file: Media:EAM10_process.xls
slides: Media:EAM10_process.pptx
Mask
Mask files: Media: EAM10_Mask.zip
Related Papers
http://optoelectronics.ece.ucsb.edu/profile/yongbo-tang
The second generation
Time: 2011
Design
Epitaxy 1250: Specs of the 1250nm EPI Epitaxy 1470: Specs of the 1470nm EPI
Structure:
Simulation:
Process
xls file: Media:EAM11_process.xls
slides: Media:EAM11_process_flow.pptx
Mask
Mask file: EAM11 Mask Final/revised on 20111128
Report
Q1 report: Study of Integrated Hybrid Silicon Modulators Q1 slides: Comparison of different hybrid modulator design
Presentation
OFC2012：1.3μm Hybrid Silicon Electroabsorption Modulator with Bandwidth beyond 67 GHz OI2012：1.3μm Lumped Hybrid Silicon Electroabsorption Modulator under 1Vpp-Operation
