Difference between revisions of "Cleanroom Reports"
From OptoelectronicsWiki
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:http://www.cleanroom.byu.edu/wet_etch.phtml | :http://www.cleanroom.byu.edu/wet_etch.phtml | ||
:http://terpconnect.umd.edu/~browns/wetetch.html | :http://terpconnect.umd.edu/~browns/wetetch.html | ||
+ | :http://140.120.11.121/~vincent/tools/etch/wetchemicaletch.php | ||
*Dry etch recipes: | *Dry etch recipes: | ||
:http://www.tnw.tudelft.nl/over-faculteit/afdelingen/quantum-nanoscience/medewerkers/onderzoeksgroepen/kavli-nanolab-delft/facility/process-recipes/dry-etch-recipes/ | :http://www.tnw.tudelft.nl/over-faculteit/afdelingen/quantum-nanoscience/medewerkers/onderzoeksgroepen/kavli-nanolab-delft/facility/process-recipes/dry-etch-recipes/ |
Revision as of 11:52, 28 May 2013
- List of etch and deposit rate for cleanroom tools. Each file includes the recipe being used and the calibrated etch rate.
- Please update yours if you run any calibration so that everyone can keep track of them.
- Wet etch recipes:
- http://www.cleanroom.byu.edu/wet_etch.phtml
- http://terpconnect.umd.edu/~browns/wetetch.html
- http://140.120.11.121/~vincent/tools/etch/wetchemicaletch.php
- Dry etch recipes:
- Refractive indexes:
Dry Etch
Etched material | Equipment | Substrate | Recipe | Latest etch rate | Latest update date | Latest update by | Calib. file | Note |
---|---|---|---|---|---|---|---|---|
Si | ICP#2 | SOI | Bowers si etch # 127 | 4nm/s | JUN 12, 2010 | Jon Peters | ICP#2 si etch rate | 40/20sccm BCl3/Cl2, 500/120W ICP/RF, 2.5Pa |
SiO2 | ICP#2 | SOI | SiOxVert, recipe #101 | ~252nm/min | NOV 9, 2010; | Molly | Media:SiO2_Vert.pdf | 40sccm CHF3, 900/200W ICP/RF, 0.5Pa |
SiN | ICP#2 | SOI | SiOxVert, recipe #101 | ~300nm/min | Geza | 40sccm CHF3, 900/200W ICP/RF, 0.5Pa | ||
SiN PE-CVD | RIE#2 | SOI | MHA, 4/20/10 | See note | Sept 26, 2011; | JonP | Methane/Hydrogen/Ar, 500V, , 75mT. Polymer buildup on SiN during the etch. Etch delta not seen post 10 min 02 300W 125mT plasma in RIE2. | |
Cured SU8 (260 C for 30 min) | ICP#2 | SOI | Bowers SiOxVert etch # 101 | ~111 nm/min | MAY 27, 2010 | Geza | ||
PECVD#1 SiO2 | ICP#2 | nano etch # 104 | ~60nm/min | MAY 27, 2012 | Jock | media:ICP2_CF4-CHF3-O2_Deep_Nano_Etch.pptx | Low polymer build up on this etch allows small features. CF4/CHF3/O2 5/35/10sccm 500/50W 0.5Pa | |
Si3N4 | ICP#2 | nano etch # 104 | ~140nm/min | MAY 27, 2012 | Jock | media:ICP2_CF4-CHF3-O2_Deep_Nano_Etch.pptx | Low polymer build up on this etch allows small features. CF4/CHF3/O2 5/35/10sccm 500/50W 0.5Pa | |
UV-6 | ICP#2 | nano etch # 104 | ~120nm/min | MAY 27, 2012 | Jock | media:ICP2_CF4-CHF3-O2_Deep_Nano_Etch.pptx | Low polymer build up on this etch allows small features. CF4/CHF3/O2 5/35/10sccm 500/50W 0.5Pa | |
SPR955-0.9CM | ICP#2 | nano etch # 104 | ??? | MAY 27, 2012 | Jock | media:ICP2_CF4-CHF3-O2_Deep_Nano_Etch.pptx | Low polymer build up on this etch allows small features. CF4/CHF3/O2 5/35/10sccm 500/50W 0.5Pa | |
DSK-101 | ICP#2 | nano etch # 104 | ~142nm/min | MAY 27, 2012 | Jock | media:ICP2_CF4-CHF3-O2_Deep_Nano_Etch.pptx | Low polymer build up on this etch allows small features. CF4/CHF3/O2 5/35/10sccm 500/50W 0.5Pa | |
Cr | ICP#2 | nano etch # 104 | negligible | MAY 27, 2012 | Jock | media:ICP2_CF4-CHF3-O2_Deep_Nano_Etch.pptx | Low polymer build up on this etch allows small features. CF4/CHF3/O2 5/35/10sccm 500/50W 0.5Pa | |
ZEP or 2:1 ZEP:Anisol | ICP#2 | nano etch # 104 | ~142nm/min | MAY 27, 2012 | Jock | media:ICP2_CF4-CHF3-O2_Deep_Nano_Etch.pptx | Low polymer build up on this etch allows small features. CF4/CHF3/O2 5/35/10sccm 500/50W 0.5Pa | |
Cured SU8 (260 C for 30 min) | ICP#2 | SOI | aSi SF6 based etch # 156 (200W) | ~275 nm/min | JUN 1, 2010 | Geza | ||
Cured SU8 (260 C for 30 min) | ICP#2 | SOI | aSi SF6 based etch # 156 (200W + 40 sccm O2) | ~465 nm/min | JUN 1, 2010 | Geza | ||
Cured SU8 (260 C for 30 min) | ICP#2 | SOI | aSi SF6 based etch # 156 (300W + 40 sccm O2) | ~690 nm/min | JUN 1, 2010 | Geza | Use cured (115C/15min) SPR220-7 as mask, mask etched at ~550nm/min. Carefully check mask for cracking. | |
Cured BCB (250 C for 60 min) | ICP#1 | SOI | CF4 based etch # 308 (1000W + 50:200 sccm CF4:O2) | ~400 nm/min | JUN 1, 2012 | Jared H | ||
SiO2 and Si | ICP#2 | Si | SF6-O2 ICP2 #124 | 280-360nm/m | JUN 08, 2012 | Jon Peters | media:20120608_SF6_Silicon_etch.pptx | 30/10sccm SF6/O2, 400/50W ICP/RF, 1.0 Pa |
Sputtered W | ICP#1/2 | Si | SF6-Ar, #197/#174 ICP#1/2) | ~70 nm/m | NOV 02, 2012 | Geza | Rodwell recipe (Johann): 5/5 sccm SF6/Ar, 600/20W ICP/RF, selectivity to InGaAs > 10:1 |
Wet Etch
Etched material | Solution | Mask | Latest etch rate | Latest update date | Latest update by | Calib. file | Note |
---|---|---|---|---|---|---|---|
Thermal oxide | BHF | PR or dielectric | ~100nm/min | ||||
PECVD oxide | BHF | PR or dielectric | ~225nm/min | ||||
PECVD SiN | BHF | ~30-50nm/min | Jon P. | ||||
PECVD SiN | HF | ~500nm/min | Geza | PR does not survive as a mask | |||
Cured SU8 (260 C for 30 min) | Piranha (150mL H2SO4 + 50mL H2O2) | ~500nm/s (v. fast) | MAY 27, 2010 | Geza | Piranha does not attack SiN or Gold, suspect heavy undercut but have no data | ||
Titanium (sputtered) | BHF | PR | ~3.33nm/s (order of magnitude estimate) | JULY 5, 2010 | Geza | If you etch for >5min, cure PR at 115C for 15min prior to etch | |
Pd | Au etchant (TFA) | PR | ~1.8nm/s | Oct 15, 2012 | Geza | PR cured at 115 C for 5 min prior to etch, etch stops on InGaAs | |
Ta2O5 | HF | no mask used | ~100nm/s | JUNE 1, 2011 | Geza | ||
Sputtered W | H2O2 (20 C) | no mask used | ~50 nm/min (~100 nm/min @ 50 C) | Nov 1, 2012 | Geza | unpatterned samples etched fine (no bubbling), patterned samples did not etch (lots of bubbling) |
Dielectric Deposit
Material | Equipment | Latest deposit rate | Latest update date | Latest update by | Calib. file | Note |
---|---|---|---|---|---|---|
SiN | PECVD | |||||
SiO2 | PECVD | |||||
Ta2O5 | Ebeam #2 | 1A/sec | Hui-Wen | Deposit 203nm on blank Si sample (do BHF dip before deposition), measure index and thickness on ellipsometer (Filmetrics is not good for this), calculate required thickness from index (http://optoelectronics.ece.ucsb.edu/oewiki/index.php/Simulation/multiFilm), deposit dielectric on both facets (one at a time). Generally need 203nm for 7 degree facets, Ta2O5 index ~2.0, purple color. | ||
SrF2 | Ebeam #2 | 2-5A/sec | Jon P | Per Je-Hyeong on Nov 16, 2010. Target 200 nm, measured 350 nm. Target 300 nm, measured 450 nm. For liftoff process only use 1165-ISO for liftoff because DI will dissolve SrF2 in 2-3 minutes. |
Lithography
Equipment | Resist | Polarity | Hardmask | Substrate | Pre-Exposure Bake | Exposure Dose | Focus | Post-Exposure Bake | Development | Report | Author |
---|---|---|---|---|---|---|---|---|---|---|---|
Autostepper | SPR 955 0.9 | Positive | 200nm PECVD Oxide | GaAs (should work with Si, SOI, and InP also) | 95C,90s | ~.42s report variable | 0 | 110C,90s | MIF726,40s | Over-exposure Pattern Reduction | Jock |
Thermal oxidation
Dry/wet | Temperature | Material | File link |
---|---|---|---|
Wet | 1050C | Si | File:Wetox 1050.xlsx |