Etched material |
Equipment |
Substrate |
Recipe |
Latest etch rate |
Latest update date |
Latest update by |
Calib. file |
Note
|
Si |
ICP#2 |
SOI |
Bowers si etch # 127 |
4nm/s |
JUN 12, 2010 |
Jon Peters |
ICP#2 si etch rate |
40/20sccm BCl3/Cl2, 500/120W ICP/RF, 2.5Pa
|
SiO2 |
ICP#2 |
SOI |
SiOxVert, recipe #101 |
~252nm/min |
NOV 9, 2010; |
Molly |
Media:SiO2_Vert.pdf |
40sccm CHF3, 900/200W ICP/RF, 0.5Pa
|
SiN |
ICP#2 |
SOI |
SiOxVert, recipe #101 |
~300nm/min |
|
Geza |
|
40sccm CHF3, 900/200W ICP/RF, 0.5Pa
|
SiN PE-CVD |
RIE#2 |
SOI |
MHA, 4/20/10 |
See note |
Sept 26, 2011; |
JonP |
|
Methane/Hydrogen/Ar, 500V, , 75mT. Polymer buildup on SiN during the etch. Etch delta not seen post 10 min 02 300W 125mT plasma in RIE2.
|
Cured SU8 (260 C for 30 min) |
ICP#2 |
SOI |
Bowers SiOxVert etch # 101 |
~111 nm/min |
MAY 27, 2010 |
Geza |
|
|
PECVD#1 SiO2 |
ICP#2 |
|
nano etch # 104 |
~60nm/min |
MAY 27, 2012 |
Jock |
media:ICP2_CF4-CHF3-O2_Deep_Nano_Etch.pptx |
Low polymer build up on this etch allows small features. CF4/CHF3/O2 5/35/10sccm 500/50W 0.5Pa
|
Si3N4 |
ICP#2 |
|
nano etch # 104 |
~140nm/min |
MAY 27, 2012 |
Jock |
media:ICP2_CF4-CHF3-O2_Deep_Nano_Etch.pptx |
Low polymer build up on this etch allows small features. CF4/CHF3/O2 5/35/10sccm 500/50W 0.5Pa
|
UV-6 |
ICP#2 |
|
nano etch # 104 |
~120nm/min |
MAY 27, 2012 |
Jock |
media:ICP2_CF4-CHF3-O2_Deep_Nano_Etch.pptx |
Low polymer build up on this etch allows small features. CF4/CHF3/O2 5/35/10sccm 500/50W 0.5Pa
|
SPR955-0.9CM |
ICP#2 |
|
nano etch # 104 |
??? |
MAY 27, 2012 |
Jock |
media:ICP2_CF4-CHF3-O2_Deep_Nano_Etch.pptx |
Low polymer build up on this etch allows small features. CF4/CHF3/O2 5/35/10sccm 500/50W 0.5Pa
|
DSK-101 |
ICP#2 |
|
nano etch # 104 |
~142nm/min |
MAY 27, 2012 |
Jock |
media:ICP2_CF4-CHF3-O2_Deep_Nano_Etch.pptx |
Low polymer build up on this etch allows small features. CF4/CHF3/O2 5/35/10sccm 500/50W 0.5Pa
|
Cr |
ICP#2 |
|
nano etch # 104 |
negligible |
MAY 27, 2012 |
Jock |
media:ICP2_CF4-CHF3-O2_Deep_Nano_Etch.pptx |
Low polymer build up on this etch allows small features. CF4/CHF3/O2 5/35/10sccm 500/50W 0.5Pa
|
ZEP or 2:1 ZEP:Anisol |
ICP#2 |
|
nano etch # 104 |
~142nm/min |
MAY 27, 2012 |
Jock |
media:ICP2_CF4-CHF3-O2_Deep_Nano_Etch.pptx |
Low polymer build up on this etch allows small features. CF4/CHF3/O2 5/35/10sccm 500/50W 0.5Pa
|
Cured SU8 (260 C for 30 min) |
ICP#2 |
SOI |
aSi SF6 based etch # 156 (200W) |
~275 nm/min |
JUN 1, 2010 |
Geza |
|
|
Cured SU8 (260 C for 30 min) |
ICP#2 |
SOI |
aSi SF6 based etch # 156 (200W + 40 sccm O2) |
~465 nm/min |
JUN 1, 2010 |
Geza |
|
|
Cured SU8 (260 C for 30 min) |
ICP#2 |
SOI |
aSi SF6 based etch # 156 (300W + 40 sccm O2) |
~690 nm/min |
JUN 1, 2010 |
Geza |
|
Use cured (115C/15min) SPR220-7 as mask, mask etched at ~550nm/min. Carefully check mask for cracking.
|
Cured BCB (250 C for 60 min) |
ICP#1 |
SOI |
CF4 based etch # 308 (1000W + 50:200 sccm CF4:O2) |
~400 nm/min |
JUN 1, 2012 |
Jared H |
|
|
SiO2 and Si |
ICP#2 |
Si |
SF6-O2 ICP2 #124 |
280-360nm/m |
JUN 08, 2012 |
Jon Peters |
media:20120608_SF6_Silicon_etch.pptx |
30/10sccm SF6/O2, 400/50W ICP/RF, 1.0 Pa
|
Sputtered W |
ICP#1/2 |
Si |
SF6-Ar, #197/#174 ICP#1/2) |
~70 nm/m |
NOV 02, 2012 |
Geza |
|
Rodwell recipe (Johann): 5/5 sccm SF6/Ar, 600/20W ICP/RF, selectivity to InGaAs > 10:1
|
Etched material |
Solution |
Mask |
Latest etch rate |
Latest update date |
Latest update by |
Calib. file |
Note
|
Thermal oxide |
BHF |
PR or dielectric |
~100nm/min |
|
|
|
|
PECVD oxide |
BHF |
PR or dielectric |
~225nm/min |
|
|
|
|
PECVD SiN |
BHF |
|
~30-50nm/min |
|
Jon P. |
|
|
PECVD SiN |
HF |
|
~500nm/min |
|
Geza |
|
PR does not survive as a mask
|
Cured SU8 (260 C for 30 min) |
Piranha (150mL H2SO4 + 50mL H2O2) |
|
~500nm/s (v. fast) |
MAY 27, 2010 |
Geza |
|
Piranha does not attack SiN or Gold, suspect heavy undercut but have no data
|
Titanium (sputtered) |
BHF |
PR |
~3.33nm/s (order of magnitude estimate) |
JULY 5, 2010 |
Geza |
|
If you etch for >5min, cure PR at 115C for 15min prior to etch
|
Pd |
Au etchant (TFA) |
PR |
~1.8nm/s |
Oct 15, 2012 |
Geza |
|
PR cured at 115 C for 5 min prior to etch, etch stops on InGaAs
|
Ta2O5 |
HF |
no mask used |
~100nm/s |
JUNE 1, 2011 |
Geza |
|
|
Sputtered W |
H2O2 (20 C) |
no mask used |
~50 nm/min (~100 nm/min @ 50 C) |
Nov 1, 2012 |
Geza |
|
unpatterned samples etched fine (no bubbling), patterned samples did not etch (lots of bubbling)
|