Difference between revisions of "Process Hybrid Silicon"
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+ | ==Process Development Meeting== | ||
+ | |||
+ | [[HSP_priority_list | Agenda & List of Priorities]] | ||
+ | |||
+ | |||
+ | ==Standardized Process Follower== | ||
+ | [[file:Hybrid Silicon Process Follower - v1.2.xlsx|Hybrid Silicon Process Follower - v1.2.xlsx]] | ||
+ | |||
+ | {| border="3" | ||
+ | |+ '''Hybrid Silicon Process Modules''' | ||
+ | |- style="background:slategrey; color:white" | ||
+ | ! Module !! Manager !! Status !! Issues !! Current action items | ||
+ | |- | ||
+ | | [[Epitaxy layer design]] || Sid, Yongbo || style="background:orange" | || - No well-developed design method (tools, softwares?) <br> - No reliable quick-verification method || - Survey on EPI designs from growers, literature and other groups | ||
+ | |- | ||
+ | | [[Initial wafer check]] || Jon P., Martijn || style="background:red" | || - No standard set of test structures <br> - Non-uniform test structures || - Make a list of standard tests (TBD) | ||
+ | |- | ||
+ | | [[Dice and cleave]] || Jared B || style="background:lime" | || || | ||
+ | |- | ||
+ | | [[SOI waveguide definition]] || Sudha || style="background:orange" | || - Non-uniformity due to variations in mask thickness (width, profile) <br> - Linewidth reduction || - Fabricate samples with sputtered and thermal oxide hard mask (11/25/'11) <br> - Quantify width and etch depth variations (11/25/'11) <br> - CEM tests (11/25/'11) <br> - Mask info: [[UCSB E-Phi Runs]] | ||
+ | |- | ||
+ | | [[SOI grating definition]] || Jock || style="background:orange" | || - Improve uniformity on grating etch depth from run to run || - None yet; keep calibration run | ||
+ | |- | ||
+ | | [[SOI actives definition]] || Jon D. || style="background:red" | || - Not tested <br> - Implantation/anneal for doping needs to be characterized <br> - Contact resistance <br> - Heavy ion implant for photodiodes characterization || - Test structures on upcoming SWEEPER run (est. 01/02/'12) | ||
+ | |- | ||
+ | | [[Vertical channel definition]] || Sudha || style="background:lime" | || || - Test mask: ideas due 12/14, mask review 12/20 <br> - Mask info: [[UCSB E-Phi Runs]]; | ||
+ | |- | ||
+ | | [[Protection layer definition]] || Geza || style="background:orange" | || - III-V delamination at edge <br> - Some III/V remains in gap || - Quantify amount of delamination (11/11/'11) <br> - Test more aggressive III/V removal chemistry (12/02/'11) | ||
+ | |- | ||
+ | | [[Quantum well intermixing]] || Sid || style="background:orange" | || - New process, current research || - Intel QWI project timeline | ||
+ | |- | ||
+ | | [[Wafer bonding]] || Jon P., Di || style="background:orange" | || - Edge delamination <br> - Delamination around e.g. AWGs <br> - Low bonding yield (<50%) || - Make list of tests and test structures (11/18/'11) <br> - Design test mask, info: [[UCSB E-Phi Runs]] | ||
+ | |- | ||
+ | | [[Gap fill]] || Geza || style="background:orange" | || || | ||
+ | |- | ||
+ | | [[P-mesa definition]] || Mike || style="background:orange" | || - Expect to move to SiO2 masks <br> - Cause of grass never determined || - Test SiO2 hardmask on P-mesa etch <br> - Continue scrubbing electrode and running 1 chip at a time to elude grass | ||
+ | |- | ||
+ | | [[Lower SCH definition]] || Mike || style="background:lime" | || - No existing issues || - idem | ||
+ | |- | ||
+ | | [[N-InP definition]] || Mike || style="background:orange" | || - Si waveguides loss increased marginally || - idem | ||
+ | |- | ||
+ | | [[N-metal definition]] || Sid || style="background:orange" | || - Non-reproducible contact resistance || - Test: Ti/Pt, Pd/Ti and Pd/Ge on p-InGaAs <br> - Test: Pd/Ge and Ni/Ge/Au on n-InP <br> - Sequential annealing and resistance measurement (TBD, 2 weeks total after start) <br> - Design epi for improvement and test (TBD) <br> - Make list of potential epi improvements (11/11/'11) | ||
+ | |- | ||
+ | | [[P-metal definition]] || Jock, Sid || style="background:red" | || - Planarization not tested <br> - Non-reproducible contact resistance || - Test with PULSAR taper mask (TBD) <br> - Test BCB and SOG (12/09/'11) | ||
+ | |- | ||
+ | | [[Ion implantation]] || Sid || style="background:orange" | || - Do we know the exact implant profile? <br> - When should we implant?|| | ||
+ | |- | ||
+ | | [[Via definition]] || Jock || style="background:orange" | || || | ||
+ | |- | ||
+ | | [[Probe metal definition]] || Sid || style="background:orange" | || - Open circuit through via <br> - Check sticking with new planarization process || - Find cause and solution | ||
+ | |- | ||
+ | | [[Remove III/V in gap]] || Geza, Daryl || style="background:orange" | || || | ||
+ | |- | ||
+ | | [[Dice and polish]] || Jared(Dice), Geza || style="background:lime" | || || | ||
+ | |- | ||
+ | |} | ||
+ | |||
+ | <br> | ||
+ | <br> | ||
+ | |||
+ | <span style="background:lime"> ___ </span> Low risk: >95% yield, established process module; <br> | ||
+ | <span style="background:orange"> ___ </span> Medium risk: ~50% - 95% yield, relatively new process module or minor issues; <br> | ||
+ | <span style="background:red"> ___ </span> High risk: <50% yield, non-established process or major issues. <br> | ||
+ | |||
+ | <br> | ||
+ | <br> | ||
+ | |||
+ | ==EPHI Shuttle run-1 (SOA only)== | ||
+ | |||
+ | [[media:Process follower.docx | Complete Process Follower]] | ||
+ | {| border="3" | ||
+ | |+ '''Modules for Process A - Lead Process''' | ||
+ | |- style="background:red; color:white" | ||
+ | ! Process ID !! Process flow !! Process follower !! Description | ||
+ | |- | ||
+ | | WG etch || [[media:Dev-2.2_process_flows.pptx | Complete Flow A]] || [[media:WG Module.docx | Si WG etch]] || Rib waveguide formation, Alignment marks. | ||
+ | |- | ||
+ | | VC etch || || [[media:VC_module.docx | Si VC etch]] || Vertical channel etch | ||
+ | |- | ||
+ | | Bonding || || [[Media:Bonding short.docx | Bonding]] || [[Media:Bonding process.docx | Plasma assisted wafer bonding guide - Author:Michael D]] | ||
+ | |- | ||
+ | | InP-mesa etch || || [[Media:RIE2 etch.docx | P-mesa etch]] || Mesa etch to top SCH layer | ||
+ | |- | ||
+ | | QW wet etch || || [[Media:QW wet etch.docx | QW etch]] || Active layer wet etch | ||
+ | |- | ||
+ | | N-metal deposition || || [[Media:n metal dep.docx | N-metal deposition]] || N-metal (Ni/Ge/Au/Ni/Au) | ||
+ | |- | ||
+ | | Oxide Planarization & Via formation || || [[Media:planarize and via etch.docx | Planarization & Via etch]] || 1um oxide deposition & via etch | ||
+ | |- | ||
+ | | P-/Probepad metal deposition || || [[Media:Probepad p-metal dep.docx | Probepad metallization]] || P-/probepad metal stack (Pd/Ti/Pd/Au) | ||
+ | |- | ||
+ | |||
+ | |} | ||
+ | [[media:Process follower.docx | Complete Process Follower]] | ||
+ | {| border="3" | ||
+ | |+ '''Modules for Process B- Catch-up Process''' | ||
+ | |- style="background:red; color:white" | ||
+ | ! Process ID !! Process flow !! Process follower !! Description | ||
+ | |- | ||
+ | | WG etch || [[media:Dev-2.2_process_flows.pptx | Complete Flow B]] || [[media:WG Module.docx | Si WG etch]] || Rib waveguide formation, Alignment marks. | ||
+ | |- | ||
+ | | VC etch || || [[media:VC_module.docx | Si VC etch]] || Vertical channel etch | ||
+ | |- | ||
+ | | Bonding || || [[Media:Bonding short.docx | Bonding]] || [[Media:Bonding process.docx | Plasma assisted wafer bonding guide - Author:Michael D]] | ||
+ | |- | ||
+ | | P-metal deposition || || [[media:p metal deposition.docx | p-metal deposition]] || P-metal stack (Pd/W) | ||
+ | |- | ||
+ | | InP-mesa etch || || [[Media:RIE2 etch.docx | P-mesa etch]] || Mesa etch to top SCH layer | ||
+ | |- | ||
+ | | QW wet etch || || [[Media:QW wet etch.docx | QW etch]] || Active layer wet etch | ||
+ | |- | ||
+ | | N-metal deposition || || [[Media:n metal dep.docx | N-metal deposition]] || N-metal (Ni/Ge/Au/Ni/Au) | ||
+ | |- | ||
+ | | Oxide Planarization & Via formation || || [[Media:planarize and via etch.docx | Planarization & Via etch]] || 1um oxide deposition & via etch | ||
+ | |- | ||
+ | | Probepad metal deposition || || [[Media:Probepad p-metal dep.docx | Probepad metallization]] || Probepad metal stack (Pd/Ti/Pd/Au) | ||
+ | |- | ||
+ | |||
+ | |} | ||
+ | |||
+ | ==Old process followers== | ||
+ | |||
+ | |||
+ | |||
+ | |||
{| border="3" | {| border="3" | ||
− | |+ ''' | + | |+ '''Single steps of hybrid silicon processes''' |
|- style="background:red; color:white" | |- style="background:red; color:white" | ||
! Process ID !! Version !! Process flow !! Process follower !! Description | ! Process ID !! Version !! Process flow !! Process follower !! Description | ||
Line 8: | Line 133: | ||
| SP-VC || || || [[media:VC.xlsx | Si VC etch]] || Vertical channel etch | | SP-VC || || || [[media:VC.xlsx | Si VC etch]] || Vertical channel etch | ||
|- | |- | ||
− | |HSP-METCH || || || [[media:Mesa_etch.xlsx | Mesa etch]] || Forms mesa | + | |HSP-METCH || || || [[media:Mesa_etch.xlsx | Mesa etch]] || Forms mesa: [[Mesa Etching | see page]] for optimization efforts |
|- | |- | ||
|HSP-QW || || || [[media:QW_etch.xlsx | III-V QW etch]] || Quantum well etch | |HSP-QW || || || [[media:QW_etch.xlsx | III-V QW etch]] || Quantum well etch | ||
Line 21: | Line 146: | ||
||Pattern and deposit probe metal | ||Pattern and deposit probe metal | ||
|- | |- | ||
− | | | + | | Wafer bonding || || || [[Media:Wafer_Bonding_guide_by_Mike_rev_1.docx | Bonding]]|| Beginner's guide to plasma assisted wafer bonding |
|- | |- | ||
− | | | + | | Wafer bonding II || || || [[media:O2PlamsaDirectBond_DiLiang.doc | direct wafer bonding]] || O2 plasma assisted wafer bonding (rev. 2008) |
+ | |- | ||
+ | | Non-planar wafer bonding || || || [[media:Nonplanar_wafer_bonding_recipe.doc | non-planar bonding]] || Non-planar wafer bonding for bonding multiple epis to a single Si piece (see Jon Geske's thesis) | ||
|- | |- | ||
− | | | + | | TLM only || || || [[media:TLM_Siddarth.doc | TLM only]] || Post-bond process for use with a TLM-only mask set |
|- | |- | ||
+ | |} | ||
+ | |||
+ | |||
+ | |||
+ | {| border="3" | ||
+ | |+ '''Full device run hybrid silicon processes''' | ||
+ | |- style="background:red; color:white" | ||
+ | ! Process ID !! Version !! Process flow !! Process follower !! Description | ||
+ | |- | ||
+ | | PHASER || 2 || [[media:090810_filter_rev2_process flow.ppt | PHASER]] || [[media:090811_recipe_optical filter_rev2_batch1.xls | PHASER]] || PHASER (SOAs, thermal phase tuning pads, MMIs) process flow. [[media:PHASERmaskCoordinates.xlsx|Alignment mark coordinates]] | ||
+ | |- | ||
+ | | Epump 2 || || [[media:Self_Aligned_Process_Flow_awfang0308.ppt | process flow ]] || [[media:Epump2_Proton_Followerrev3.xls | Epump 2]] || Mostly designed for lasers, revised 4/6/07. Starts after WG and VC etches. | ||
+ | |- | ||
+ | | Self-aligned rev. 2 || || [[media:Self_Aligned_Process_Flow_awfang0308.ppt | process flow ]] || [[media:Self_aligned_process.rev_2.doc | self rev. 2]] || Self-aligned process, starts after substrate removal, revised 2007. Contains PR spin speeds and exposure times for Stepper (6300) | ||
+ | |- | ||
+ | |} | ||
+ | Check the [[Device Run]] page for more process followers, mask layout files, etc. | ||
+ | |||
+ | |||
+ | |||
+ | |||
+ | {| border="3" | ||
+ | |+ '''Reall old versions of hybrid silicon processes''' | ||
+ | |- style="background:red; color:white" | ||
+ | ! Process ID !! Version !! Process flow !! Process follower !! Description | ||
+ | |- | ||
+ | | PHASER || 1 || || [[media:0800801_recipe_optical_filter_hwchen.xls | PHASER gen 1]] || PHASER (SOAs, thermal phase tuning pads, MMIs) process flow. | ||
+ | |- | ||
+ | | Epump 2 || || [[media:Self_Aligned_Process_Flow_awfang0308.ppt | process flow ]] || [[media:Epump2_Proton_Followerrev3_old.xls | Epump 2]] || Mostly designed for lasers, revised 4/6/07. Starts after WG and VC etches. | ||
+ | |- | ||
+ | | Si WG etch || 1 || || [[media:SiliconWaveguide_V1_030308_awfang.doc | WG etch]] || ca. 2008 Si waveguide etch process | ||
+ | |- | ||
+ | |Si WG etch || 2 || || [[media:SiliconWaveguide_V1_080208_hwchen.doc | WG etch]] || Si waveguide etch process with gratings, PR reflow, and vertical channels | ||
+ | |- | ||
|} | |} |
Latest revision as of 17:27, 2 October 2012
Contents
Process Development Meeting[edit]
Standardized Process Follower[edit]
File:Hybrid Silicon Process Follower - v1.2.xlsx
Module | Manager | Status | Issues | Current action items |
---|---|---|---|---|
Epitaxy layer design | Sid, Yongbo | - No well-developed design method (tools, softwares?) - No reliable quick-verification method |
- Survey on EPI designs from growers, literature and other groups | |
Initial wafer check | Jon P., Martijn | - No standard set of test structures - Non-uniform test structures |
- Make a list of standard tests (TBD) | |
Dice and cleave | Jared B | |||
SOI waveguide definition | Sudha | - Non-uniformity due to variations in mask thickness (width, profile) - Linewidth reduction |
- Fabricate samples with sputtered and thermal oxide hard mask (11/25/'11) - Quantify width and etch depth variations (11/25/'11) - CEM tests (11/25/'11) - Mask info: UCSB E-Phi Runs | |
SOI grating definition | Jock | - Improve uniformity on grating etch depth from run to run | - None yet; keep calibration run | |
SOI actives definition | Jon D. | - Not tested - Implantation/anneal for doping needs to be characterized - Contact resistance - Heavy ion implant for photodiodes characterization |
- Test structures on upcoming SWEEPER run (est. 01/02/'12) | |
Vertical channel definition | Sudha | - Test mask: ideas due 12/14, mask review 12/20 - Mask info: UCSB E-Phi Runs; | ||
Protection layer definition | Geza | - III-V delamination at edge - Some III/V remains in gap |
- Quantify amount of delamination (11/11/'11) - Test more aggressive III/V removal chemistry (12/02/'11) | |
Quantum well intermixing | Sid | - New process, current research | - Intel QWI project timeline | |
Wafer bonding | Jon P., Di | - Edge delamination - Delamination around e.g. AWGs - Low bonding yield (<50%) |
- Make list of tests and test structures (11/18/'11) - Design test mask, info: UCSB E-Phi Runs | |
Gap fill | Geza | |||
P-mesa definition | Mike | - Expect to move to SiO2 masks - Cause of grass never determined |
- Test SiO2 hardmask on P-mesa etch - Continue scrubbing electrode and running 1 chip at a time to elude grass | |
Lower SCH definition | Mike | - No existing issues | - idem | |
N-InP definition | Mike | - Si waveguides loss increased marginally | - idem | |
N-metal definition | Sid | - Non-reproducible contact resistance | - Test: Ti/Pt, Pd/Ti and Pd/Ge on p-InGaAs - Test: Pd/Ge and Ni/Ge/Au on n-InP - Sequential annealing and resistance measurement (TBD, 2 weeks total after start) - Design epi for improvement and test (TBD) - Make list of potential epi improvements (11/11/'11) | |
P-metal definition | Jock, Sid | - Planarization not tested - Non-reproducible contact resistance |
- Test with PULSAR taper mask (TBD) - Test BCB and SOG (12/09/'11) | |
Ion implantation | Sid | - Do we know the exact implant profile? - When should we implant? |
||
Via definition | Jock | |||
Probe metal definition | Sid | - Open circuit through via - Check sticking with new planarization process |
- Find cause and solution | |
Remove III/V in gap | Geza, Daryl | |||
Dice and polish | Jared(Dice), Geza |
___ Low risk: >95% yield, established process module;
___ Medium risk: ~50% - 95% yield, relatively new process module or minor issues;
___ High risk: <50% yield, non-established process or major issues.
EPHI Shuttle run-1 (SOA only)[edit]
Process ID | Process flow | Process follower | Description |
---|---|---|---|
WG etch | Complete Flow A | Si WG etch | Rib waveguide formation, Alignment marks. |
VC etch | Si VC etch | Vertical channel etch | |
Bonding | Bonding | Plasma assisted wafer bonding guide - Author:Michael D | |
InP-mesa etch | P-mesa etch | Mesa etch to top SCH layer | |
QW wet etch | QW etch | Active layer wet etch | |
N-metal deposition | N-metal deposition | N-metal (Ni/Ge/Au/Ni/Au) | |
Oxide Planarization & Via formation | Planarization & Via etch | 1um oxide deposition & via etch | |
P-/Probepad metal deposition | Probepad metallization | P-/probepad metal stack (Pd/Ti/Pd/Au) |
Process ID | Process flow | Process follower | Description |
---|---|---|---|
WG etch | Complete Flow B | Si WG etch | Rib waveguide formation, Alignment marks. |
VC etch | Si VC etch | Vertical channel etch | |
Bonding | Bonding | Plasma assisted wafer bonding guide - Author:Michael D | |
P-metal deposition | p-metal deposition | P-metal stack (Pd/W) | |
InP-mesa etch | P-mesa etch | Mesa etch to top SCH layer | |
QW wet etch | QW etch | Active layer wet etch | |
N-metal deposition | N-metal deposition | N-metal (Ni/Ge/Au/Ni/Au) | |
Oxide Planarization & Via formation | Planarization & Via etch | 1um oxide deposition & via etch | |
Probepad metal deposition | Probepad metallization | Probepad metal stack (Pd/Ti/Pd/Au) |
Old process followers[edit]
Process ID | Version | Process flow | Process follower | Description |
---|---|---|---|---|
SP-PWD | Si WG etch | Si WG etch | Single etch-step SOI process; passive components | |
SP-VC | Si VC etch | Vertical channel etch | ||
HSP-METCH | Mesa etch | Forms mesa: see page for optimization efforts | ||
HSP-QW | III-V QW etch | Quantum well etch | ||
HSP-NETCH | n-layer etch | Remove n-layer to expose Si | ||
HSP-PTLM | p-TLM step | An additional process step is necessary to pattern p-TLM structures | ||
HSP-METAL | thin metal | Thin metal deposition | ||
HSP-PP | Probe pad deposition | Pattern and deposit probe metal | ||
Wafer bonding | Bonding | Beginner's guide to plasma assisted wafer bonding | ||
Wafer bonding II | direct wafer bonding | O2 plasma assisted wafer bonding (rev. 2008) | ||
Non-planar wafer bonding | non-planar bonding | Non-planar wafer bonding for bonding multiple epis to a single Si piece (see Jon Geske's thesis) | ||
TLM only | TLM only | Post-bond process for use with a TLM-only mask set |
Process ID | Version | Process flow | Process follower | Description |
---|---|---|---|---|
PHASER | 2 | PHASER | PHASER | PHASER (SOAs, thermal phase tuning pads, MMIs) process flow. Alignment mark coordinates |
Epump 2 | process flow | Epump 2 | Mostly designed for lasers, revised 4/6/07. Starts after WG and VC etches. | |
Self-aligned rev. 2 | process flow | self rev. 2 | Self-aligned process, starts after substrate removal, revised 2007. Contains PR spin speeds and exposure times for Stepper (6300) |
Check the Device Run page for more process followers, mask layout files, etc.
Process ID | Version | Process flow | Process follower | Description |
---|---|---|---|---|
PHASER | 1 | PHASER gen 1 | PHASER (SOAs, thermal phase tuning pads, MMIs) process flow. | |
Epump 2 | process flow | Epump 2 | Mostly designed for lasers, revised 4/6/07. Starts after WG and VC etches. | |
Si WG etch | 1 | WG etch | ca. 2008 Si waveguide etch process | |
Si WG etch | 2 | WG etch | Si waveguide etch process with gratings, PR reflow, and vertical channels |