Difference between revisions of "Cleanroom Reports"

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:http://www.cleanroom.byu.edu/wet_etch.phtml
 
:http://www.cleanroom.byu.edu/wet_etch.phtml
 
:http://terpconnect.umd.edu/~browns/wetetch.html
 
:http://terpconnect.umd.edu/~browns/wetetch.html
 +
:http://140.120.11.121/~vincent/tools/etch/wetchemicaletch.php
 +
*Dry etch recipes:
 +
:http://www.tnw.tudelft.nl/over-faculteit/afdelingen/quantum-nanoscience/medewerkers/onderzoeksgroepen/kavli-nanolab-delft/facility/process-recipes/dry-etch-recipes/
 
*Refractive indexes:
 
*Refractive indexes:
 
:http://refractiveindex.info/
 
:http://refractiveindex.info/
  
  
 +
===Dry Etch===
 
{| border="3"
 
{| border="3"
−
|+ '''Dry Etch'''
 
 
|- style="background:green; color:white"
 
|- style="background:green; color:white"
 
! Etched material !! Equipment !!  Substrate !!Recipe !! Latest etch rate !! Latest update date !! Latest update by !! Calib. file !! Note  
 
! Etched material !! Equipment !!  Substrate !!Recipe !! Latest etch rate !! Latest update date !! Latest update by !! Calib. file !! Note  
 
|-  
 
|-  
−
| Si || ICP#2 ||SOI ||Bowers si etch # 127 ||4nm/s|| JUN 12, 2010 || Jon Peters || [[media:100402_ICP-2_si_etch_calibration.xls‎|ICP#2 si etch rate]] ||  
+
| Si || ICP#2 ||SOI ||Bowers si etch # 127 ||4nm/s|| JUN 12, 2010 || Jon Peters || [[media:100402_ICP-2_si_etch_calibration.xls‎|ICP#2 si etch rate]] || 40/20sccm BCl3/Cl2, 500/120W ICP/RF, 2.5Pa
 
|-
 
|-
−
| SiO2 || ICP#2 ||SOI ||SiOxVert, recipe #101|| ~252nm/min|| NOV 9, 2010; || Molly || [[Media:SiO2_Vert.pdf]] ||  
+
| SiO2 || ICP#2 ||SOI ||SiOxVert, recipe #101|| ~252nm/min|| NOV 9, 2010; || Molly || [[Media:SiO2_Vert.pdf]] || 40sccm CHF3, 900/200W ICP/RF, 0.5Pa
 
|-
 
|-
−
| SiN || ICP#2 ||SOI ||SiOxVert, recipe #101|| ~300nm/min||   || Geza ||   ||  
+
| SiN || ICP#2 ||SOI ||SiOxVert, recipe #101|| ~300nm/min||   || Geza ||   || 40sccm CHF3, 900/200W ICP/RF, 0.5Pa
 +
|-
 +
| SiN PE-CVD || RIE#2 ||SOI ||MHA, 4/20/10||See note|| Sept 26, 2011; || JonP ||   ||  Methane/Hydrogen/Ar, 500V, , 75mT. Polymer buildup on SiN during the etch. Etch delta not seen post 10 min 02 300W 125mT plasma in RIE2.
 
|-
 
|-
 
| Cured SU8 (260 C for 30 min) || ICP#2 ||SOI ||Bowers SiOxVert etch # 101 ||~111 nm/min || MAY 27, 2010 || Geza ||  ||  
 
| Cured SU8 (260 C for 30 min) || ICP#2 ||SOI ||Bowers SiOxVert etch # 101 ||~111 nm/min || MAY 27, 2010 || Geza ||  ||  
 +
|-
 +
| PECVD#1 SiO2 || ICP#2 || ||nano etch # 104 || ~60nm/min || MAY 27, 2012 || Jock|| [[media:ICP2_CF4-CHF3-O2_Deep_Nano_Etch.pptx]] || Low polymer build up on this etch allows small features. CF4/CHF3/O2 5/35/10sccm 500/50W 0.5 Pa 
 +
|-
 +
| PECVD#1 SiO2 || ICP#2 || ||GC-SiN # 181 || ~80-100nm/min || Nov 1, 2013 || Jon P|| ||  CF4/O2 50/5 sccm 500/25W 2.0 Pa. Etch rate mostly ~83nm/min but one flyer at 97 nm/min
 +
|-
 +
| SPR 220 3um || ICP#2 || ||GC-SiN # 181 || ~184nm/min || Nov 1, 2013 || Jon P|| ||  CF4/O2 50/5 sccm 500/25W 2.0 Pa. Etched for 4 min (2 min plus 2 min) SPR baked at 110C for 2 min pre expose and post expose. Plasma for 1 min prior to etch. Initial resist thickness 2.5 um
 +
|-
 +
| Si3N4 || ICP#2 || ||nano etch # 104 || ~140nm/min || MAY 27, 2012 || Jock|| [[media:ICP2_CF4-CHF3-O2_Deep_Nano_Etch.pptx]] || Low polymer build up on this etch allows small features. CF4/CHF3/O2 5/35/10sccm 500/50W 0.5Pa
 +
|-
 +
| UV-6 || ICP#2 || ||nano etch # 104 || ~120nm/min || MAY 27, 2012 || Jock|| [[media:ICP2_CF4-CHF3-O2_Deep_Nano_Etch.pptx]] || Low polymer build up on this etch allows small features. CF4/CHF3/O2 5/35/10sccm 500/50W 0.5Pa
 +
|-
 +
| SPR955-0.9CM || ICP#2 || ||nano etch # 104 || ???|| MAY 27, 2012 || Jock|| [[media:ICP2_CF4-CHF3-O2_Deep_Nano_Etch.pptx]] || Low polymer build up on this etch allows small features. CF4/CHF3/O2 5/35/10sccm 500/50W 0.5Pa
 +
|-
 +
| DSK-101 || ICP#2 || ||nano etch # 104 || ~142nm/min || MAY 27, 2012 || Jock|| [[media:ICP2_CF4-CHF3-O2_Deep_Nano_Etch.pptx]] || Low polymer build up on this etch allows small features. CF4/CHF3/O2 5/35/10sccm 500/50W 0.5Pa
 +
|-
 +
| Cr || ICP#2 || ||nano etch # 104 || negligible || MAY 27, 2012 || Jock|| [[media:ICP2_CF4-CHF3-O2_Deep_Nano_Etch.pptx]] || Low polymer build up on this etch allows small features. CF4/CHF3/O2 5/35/10sccm 500/50W 0.5Pa
 +
|-
 +
| ZEP or 2:1 ZEP:Anisol || ICP#2 || ||nano etch # 104 ||~142nm/min  || MAY 27, 2012 || Jock|| [[media:ICP2_CF4-CHF3-O2_Deep_Nano_Etch.pptx]] || Low polymer build up on this etch allows small features. CF4/CHF3/O2 5/35/10sccm 500/50W 0.5Pa
 
|-
 
|-
 
| Cured SU8 (260 C for 30 min) || ICP#2 ||SOI ||aSi SF6 based etch # 156 (200W) ||~275 nm/min || JUN 1, 2010 || Geza ||  ||  
 
| Cured SU8 (260 C for 30 min) || ICP#2 ||SOI ||aSi SF6 based etch # 156 (200W) ||~275 nm/min || JUN 1, 2010 || Geza ||  ||  
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|-
 
|-
 
| Cured SU8 (260 C for 30 min) || ICP#2 ||SOI ||aSi SF6 based etch # 156 (300W + 40 sccm O2) ||~690 nm/min || JUN 1, 2010 || Geza ||  || Use cured (115C/15min) SPR220-7 as mask, mask etched at ~550nm/min. Carefully check mask for cracking.
 
| Cured SU8 (260 C for 30 min) || ICP#2 ||SOI ||aSi SF6 based etch # 156 (300W + 40 sccm O2) ||~690 nm/min || JUN 1, 2010 || Geza ||  || Use cured (115C/15min) SPR220-7 as mask, mask etched at ~550nm/min. Carefully check mask for cracking.
 +
|-
 +
| Cured BCB (250 C for 60 min) || ICP#1 ||SOI ||CF4 based etch # 308 (1000W + 50:200 sccm CF4:O2) ||~400 nm/min || JUN 1, 2012 || Jared H ||  ||
 +
|-
 +
| SiO2 and Si || ICP#2 ||Si ||SF6-O2 ICP2 #124 ||280-360nm/m|| JUN 08, 2012 || Jon Peters || [[media:20120608_SF6_Silicon_etch.pptx]] || 30/10sccm SF6/O2, 400/50W ICP/RF, 1.0 Pa
 +
|-
 +
| Sputtered W || ICP#1/2 ||Si ||SF6-Ar, #197/#174 ICP#1/2) ||~70 nm/m|| NOV 02, 2012 || Geza || || Rodwell recipe (Johann): 5/5 sccm SF6/Ar, 600/20W ICP/RF, selectivity to InGaAs > 10:1
 
|-
 
|-
 
|}
 
|}
  
−
 
+
===Wet Etch===
 
{| border="3"
 
{| border="3"
−
|+ '''Wet Etch'''
 
 
|- style="background:purple; color:white"
 
|- style="background:purple; color:white"
 
! Etched material !!  Solution !! Mask !! Latest etch rate !! Latest update date !! Latest update by !! Calib. file !! Note  
 
! Etched material !!  Solution !! Mask !! Latest etch rate !! Latest update date !! Latest update by !! Calib. file !! Note  
Line 47: Line 75:
 
| Titanium (sputtered) || BHF || PR || ~3.33nm/s (order of magnitude estimate) || JULY 5, 2010 || Geza ||   || If you etch for >5min, cure PR at 115C for 15min prior to etch
 
| Titanium (sputtered) || BHF || PR || ~3.33nm/s (order of magnitude estimate) || JULY 5, 2010 || Geza ||   || If you etch for >5min, cure PR at 115C for 15min prior to etch
 
|-
 
|-
−
| Ta2O5 || HF || no mask used || ~100nm/s  || JUNE 1, 2011 || Geza ||   ||   |-
+
| Pd || Au etchant (TFA) || PR || ~1.8nm/s || Oct 15, 2012 || Geza ||   || PR cured at 115 C for 5 min prior to etch, etch stops on InGaAs
 +
|-
 +
| Ta2O5 || HF || no mask used || ~100nm/s  || JUNE 1, 2011 || Geza ||   ||  
 +
|-
 +
| Sputtered W || H2O2 (20 C) || no mask used || ~50 nm/min (~100 nm/min @ 50 C) || Nov 1, 2012 || Geza ||   || unpatterned samples etched fine (no bubbling), patterned samples did not etch (lots of bubbling)
 
|}
 
|}
  
−
 
+
===Dielectric Deposit===
 
{| border="3"
 
{| border="3"
−
|+ '''Dielectric Deposit'''
 
 
|- style="background:blue; color:white"
 
|- style="background:blue; color:white"
 
! Material !! Equipment !! Latest deposit rate !! Latest update date !! Latest update by !! Calib. file !! Note  
 
! Material !! Equipment !! Latest deposit rate !! Latest update date !! Latest update by !! Calib. file !! Note  
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| SiO2 || PECVD ||   ||   ||   ||   ||  
 
| SiO2 || PECVD ||   ||   ||   ||   ||  
 
|-
 
|-
−
| Ta2O5 || Ebeam #2 || 1A/sec ||   || Hui-Wen || [[media:AR_Coating.xlsx|Script]] || Deposit 180nm on blank Si sample (do BHF dip before deposition), measure index and thickness on ellipsometer (Filmetrics is not good for this), calculate required thickness from index (use Excel script), deposit dielectric on both facets (one at a time). Generally 180nm, n~2.0, purple color.
+
| Ta2O5 || Ebeam #2 || 1A/sec ||   || Hui-Wen ||   || Deposit 203nm on blank Si sample (do BHF dip before deposition), measure index and thickness on ellipsometer (Filmetrics is not good for this), calculate required thickness from index (http://optoelectronics.ece.ucsb.edu/oewiki/index.php/Simulation/multiFilm), deposit dielectric on both facets (one at a time). Generally need 203nm for 7 degree facets, Ta2O5 index ~2.0, purple color.
 
|-
 
|-
 
| SrF2 || Ebeam #2 || 2-5A/sec ||   || Jon P||   || Per Je-Hyeong on Nov 16, 2010. Target 200 nm, measured 350 nm. Target 300 nm, measured 450 nm. For liftoff process only use 1165-ISO for liftoff because DI will dissolve SrF2 in 2-3 minutes.
 
| SrF2 || Ebeam #2 || 2-5A/sec ||   || Jon P||   || Per Je-Hyeong on Nov 16, 2010. Target 200 nm, measured 350 nm. Target 300 nm, measured 450 nm. For liftoff process only use 1165-ISO for liftoff because DI will dissolve SrF2 in 2-3 minutes.
 +
|}
 +
 +
===Metal deposition===
 +
W deposition in Sputter 4 [[media:2013_09_16_W_Sputter_FilmStress.pptx|Report on film stress]]
 +
 +
===Lithography===
 +
{| border="3"
 +
|- style="background:red; color:black"
 +
! Equipment !! Resist !!  Polarity !! Hardmask !! Substrate !! Pre-Exposure Bake !! Exposure Dose !! Focus !! Post-Exposure Bake !! Development !! Report !! Author
 +
|-
 +
| Autostepper || SPR 955 0.9 ||Positive||200nm PECVD Oxide ||GaAs (should work with Si, SOI, and InP also)|| 95C,90s || ~.42s report variable || 0 ||110C,90s || MIF726,40s || [[media:Taper_Tip_Reduction_Process_Development.pptx|Over-exposure Pattern Reduction]] || Jock
 +
 +
|-
 +
|}
 +
 +
 +
 +
===Thermal oxidation===
 +
{| border="3"
 +
|- style="background:aqua; color:black"
 +
! Dry/wet !! Temperature !!  Material !! File link
 +
|-
 +
| Wet || 1050C ||  Si || [[File:Wetox_1050.xlsx]]
 +
 +
|-
 
|}
 
|}

Latest revision as of 10:19, 1 November 2013

  • List of etch and deposit rate for cleanroom tools. Each file includes the recipe being used and the calibrated etch rate.
  • Please update yours if you run any calibration so that everyone can keep track of them.
  • Wet etch recipes:
http://www.cleanroom.byu.edu/wet_etch.phtml
http://terpconnect.umd.edu/~browns/wetetch.html
http://140.120.11.121/~vincent/tools/etch/wetchemicaletch.php
  • Dry etch recipes:
http://www.tnw.tudelft.nl/over-faculteit/afdelingen/quantum-nanoscience/medewerkers/onderzoeksgroepen/kavli-nanolab-delft/facility/process-recipes/dry-etch-recipes/
  • Refractive indexes:
http://refractiveindex.info/


Dry Etch[edit]

Etched material Equipment Substrate Recipe Latest etch rate Latest update date Latest update by Calib. file Note
Si ICP#2 SOI Bowers si etch # 127 4nm/s JUN 12, 2010 Jon Peters ICP#2 si etch rate 40/20sccm BCl3/Cl2, 500/120W ICP/RF, 2.5Pa
SiO2 ICP#2 SOI SiOxVert, recipe #101 ~252nm/min NOV 9, 2010; Molly Media:SiO2_Vert.pdf 40sccm CHF3, 900/200W ICP/RF, 0.5Pa
SiN ICP#2 SOI SiOxVert, recipe #101 ~300nm/min   Geza   40sccm CHF3, 900/200W ICP/RF, 0.5Pa
SiN PE-CVD RIE#2 SOI MHA, 4/20/10 See note Sept 26, 2011; JonP   Methane/Hydrogen/Ar, 500V, , 75mT. Polymer buildup on SiN during the etch. Etch delta not seen post 10 min 02 300W 125mT plasma in RIE2.
Cured SU8 (260 C for 30 min) ICP#2 SOI Bowers SiOxVert etch # 101 ~111 nm/min MAY 27, 2010 Geza  
PECVD#1 SiO2 ICP#2 nano etch # 104 ~60nm/min MAY 27, 2012 Jock media:ICP2_CF4-CHF3-O2_Deep_Nano_Etch.pptx Low polymer build up on this etch allows small features. CF4/CHF3/O2 5/35/10sccm 500/50W 0.5 Pa
PECVD#1 SiO2 ICP#2 GC-SiN # 181 ~80-100nm/min Nov 1, 2013 Jon P CF4/O2 50/5 sccm 500/25W 2.0 Pa. Etch rate mostly ~83nm/min but one flyer at 97 nm/min
SPR 220 3um ICP#2 GC-SiN # 181 ~184nm/min Nov 1, 2013 Jon P CF4/O2 50/5 sccm 500/25W 2.0 Pa. Etched for 4 min (2 min plus 2 min) SPR baked at 110C for 2 min pre expose and post expose. Plasma for 1 min prior to etch. Initial resist thickness 2.5 um
Si3N4 ICP#2 nano etch # 104 ~140nm/min MAY 27, 2012 Jock media:ICP2_CF4-CHF3-O2_Deep_Nano_Etch.pptx Low polymer build up on this etch allows small features. CF4/CHF3/O2 5/35/10sccm 500/50W 0.5Pa
UV-6 ICP#2 nano etch # 104 ~120nm/min MAY 27, 2012 Jock media:ICP2_CF4-CHF3-O2_Deep_Nano_Etch.pptx Low polymer build up on this etch allows small features. CF4/CHF3/O2 5/35/10sccm 500/50W 0.5Pa
SPR955-0.9CM ICP#2 nano etch # 104  ??? MAY 27, 2012 Jock media:ICP2_CF4-CHF3-O2_Deep_Nano_Etch.pptx Low polymer build up on this etch allows small features. CF4/CHF3/O2 5/35/10sccm 500/50W 0.5Pa
DSK-101 ICP#2 nano etch # 104 ~142nm/min MAY 27, 2012 Jock media:ICP2_CF4-CHF3-O2_Deep_Nano_Etch.pptx Low polymer build up on this etch allows small features. CF4/CHF3/O2 5/35/10sccm 500/50W 0.5Pa
Cr ICP#2 nano etch # 104 negligible MAY 27, 2012 Jock media:ICP2_CF4-CHF3-O2_Deep_Nano_Etch.pptx Low polymer build up on this etch allows small features. CF4/CHF3/O2 5/35/10sccm 500/50W 0.5Pa
ZEP or 2:1 ZEP:Anisol ICP#2 nano etch # 104 ~142nm/min MAY 27, 2012 Jock media:ICP2_CF4-CHF3-O2_Deep_Nano_Etch.pptx Low polymer build up on this etch allows small features. CF4/CHF3/O2 5/35/10sccm 500/50W 0.5Pa
Cured SU8 (260 C for 30 min) ICP#2 SOI aSi SF6 based etch # 156 (200W) ~275 nm/min JUN 1, 2010 Geza  
Cured SU8 (260 C for 30 min) ICP#2 SOI aSi SF6 based etch # 156 (200W + 40 sccm O2) ~465 nm/min JUN 1, 2010 Geza  
Cured SU8 (260 C for 30 min) ICP#2 SOI aSi SF6 based etch # 156 (300W + 40 sccm O2) ~690 nm/min JUN 1, 2010 Geza Use cured (115C/15min) SPR220-7 as mask, mask etched at ~550nm/min. Carefully check mask for cracking.
Cured BCB (250 C for 60 min) ICP#1 SOI CF4 based etch # 308 (1000W + 50:200 sccm CF4:O2) ~400 nm/min JUN 1, 2012 Jared H
SiO2 and Si ICP#2 Si SF6-O2 ICP2 #124 280-360nm/m JUN 08, 2012 Jon Peters media:20120608_SF6_Silicon_etch.pptx 30/10sccm SF6/O2, 400/50W ICP/RF, 1.0 Pa
Sputtered W ICP#1/2 Si SF6-Ar, #197/#174 ICP#1/2) ~70 nm/m NOV 02, 2012 Geza Rodwell recipe (Johann): 5/5 sccm SF6/Ar, 600/20W ICP/RF, selectivity to InGaAs > 10:1

Wet Etch[edit]

Etched material Solution Mask Latest etch rate Latest update date Latest update by Calib. file Note
Thermal oxide BHF PR or dielectric ~100nm/min        
PECVD oxide BHF PR or dielectric ~225nm/min        
PECVD SiN BHF   ~30-50nm/min   Jon P.    
PECVD SiN HF   ~500nm/min   Geza   PR does not survive as a mask
Cured SU8 (260 C for 30 min) Piranha (150mL H2SO4 + 50mL H2O2)   ~500nm/s (v. fast) MAY 27, 2010 Geza   Piranha does not attack SiN or Gold, suspect heavy undercut but have no data
Titanium (sputtered) BHF PR ~3.33nm/s (order of magnitude estimate) JULY 5, 2010 Geza   If you etch for >5min, cure PR at 115C for 15min prior to etch
Pd Au etchant (TFA) PR ~1.8nm/s Oct 15, 2012 Geza   PR cured at 115 C for 5 min prior to etch, etch stops on InGaAs
Ta2O5 HF no mask used ~100nm/s JUNE 1, 2011 Geza    
Sputtered W H2O2 (20 C) no mask used ~50 nm/min (~100 nm/min @ 50 C) Nov 1, 2012 Geza   unpatterned samples etched fine (no bubbling), patterned samples did not etch (lots of bubbling)

Dielectric Deposit[edit]

Material Equipment Latest deposit rate Latest update date Latest update by Calib. file Note
SiN PECVD          
SiO2 PECVD          
Ta2O5 Ebeam #2 1A/sec   Hui-Wen   Deposit 203nm on blank Si sample (do BHF dip before deposition), measure index and thickness on ellipsometer (Filmetrics is not good for this), calculate required thickness from index (http://optoelectronics.ece.ucsb.edu/oewiki/index.php/Simulation/multiFilm), deposit dielectric on both facets (one at a time). Generally need 203nm for 7 degree facets, Ta2O5 index ~2.0, purple color.
SrF2 Ebeam #2 2-5A/sec   Jon P   Per Je-Hyeong on Nov 16, 2010. Target 200 nm, measured 350 nm. Target 300 nm, measured 450 nm. For liftoff process only use 1165-ISO for liftoff because DI will dissolve SrF2 in 2-3 minutes.

Metal deposition[edit]

W deposition in Sputter 4 Report on film stress

Lithography[edit]

Equipment Resist Polarity Hardmask Substrate Pre-Exposure Bake Exposure Dose Focus Post-Exposure Bake Development Report Author
Autostepper SPR 955 0.9 Positive 200nm PECVD Oxide GaAs (should work with Si, SOI, and InP also) 95C,90s ~.42s report variable 0 110C,90s MIF726,40s Over-exposure Pattern Reduction Jock


Thermal oxidation[edit]

Dry/wet Temperature Material File link
Wet 1050C Si File:Wetox 1050.xlsx
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