Difference between revisions of "Cleanroom Reports"

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:http://www.cleanroom.byu.edu/wet_etch.phtml
 
:http://www.cleanroom.byu.edu/wet_etch.phtml
 
:http://terpconnect.umd.edu/~browns/wetetch.html
 
:http://terpconnect.umd.edu/~browns/wetetch.html
 +
:http://140.120.11.121/~vincent/tools/etch/wetchemicaletch.php
 +
*Dry etch recipes:
 +
:http://www.tnw.tudelft.nl/over-faculteit/afdelingen/quantum-nanoscience/medewerkers/onderzoeksgroepen/kavli-nanolab-delft/facility/process-recipes/dry-etch-recipes/
 +
*Refractive indexes:
 +
:http://refractiveindex.info/
  
  
 +
===Dry Etch===
 
{| border="3"
 
{| border="3"
−
|+ '''Dry Etch'''
 
 
|- style="background:green; color:white"
 
|- style="background:green; color:white"
 
! Etched material !! Equipment !!  Substrate !!Recipe !! Latest etch rate !! Latest update date !! Latest update by !! Calib. file !! Note  
 
! Etched material !! Equipment !!  Substrate !!Recipe !! Latest etch rate !! Latest update date !! Latest update by !! Calib. file !! Note  
 
|-  
 
|-  
−
| Si || ICP#2 ||SOI ||Bowers si etch # 127 ||drop from 4nm/s to 3nm/s || APR 27, 2010 || Jon Peters || [[media:100402_ICP-2_si_etch_calibration.xls‎|ICP#2 si etch rate]] ||  
+
| Si || ICP#2 ||SOI ||Bowers si etch # 127 ||4nm/s|| JUN 12, 2010 || Jon Peters || [[media:100402_ICP-2_si_etch_calibration.xls‎|ICP#2 si etch rate]] || 40/20sccm BCl3/Cl2, 500/120W ICP/RF, 2.5Pa
 +
|-
 +
| SiO2 || ICP#2 ||SOI ||SiOxVert, recipe #101|| ~252nm/min|| NOV 9, 2010; || Molly || [[Media:SiO2_Vert.pdf]] || 40sccm CHF3, 900/200W ICP/RF, 0.5Pa
 +
|-
 +
| SiN || ICP#2 ||SOI ||SiOxVert, recipe #101|| ~300nm/min||   || Geza ||   || 40sccm CHF3, 900/200W ICP/RF, 0.5Pa
 +
|-
 +
| SiN PE-CVD || RIE#2 ||SOI ||MHA, 4/20/10||See note|| Sept 26, 2011; || JonP ||   ||  Methane/Hydrogen/Ar, 500V, , 75mT. Polymer buildup on SiN during the etch. Etch delta not seen post 10 min 02 300W 125mT plasma in RIE2.
 
|-
 
|-
 
| Cured SU8 (260 C for 30 min) || ICP#2 ||SOI ||Bowers SiOxVert etch # 101 ||~111 nm/min || MAY 27, 2010 || Geza ||  ||  
 
| Cured SU8 (260 C for 30 min) || ICP#2 ||SOI ||Bowers SiOxVert etch # 101 ||~111 nm/min || MAY 27, 2010 || Geza ||  ||  
 +
|-
 +
| PECVD#1 SiO2 || ICP#2 || ||nano etch # 104 || ~60nm/min || MAY 27, 2012 || Jock|| [[media:ICP2_CF4-CHF3-O2_Deep_Nano_Etch.pptx]] || Low polymer build up on this etch allows small features. CF4/CHF3/O2 5/35/10sccm 500/50W 0.5 Pa 
 +
|-
 +
| PECVD#1 SiO2 || ICP#2 || ||GC-SiN # 181 || ~80-100nm/min || Nov 1, 2013 || Jon P|| ||  CF4/O2 50/5 sccm 500/25W 2.0 Pa. Etch rate mostly ~83nm/min but one flyer at 97 nm/min
 +
|-
 +
| SPR 220 3um || ICP#2 || ||GC-SiN # 181 || ~184nm/min || Nov 1, 2013 || Jon P|| ||  CF4/O2 50/5 sccm 500/25W 2.0 Pa. Etched for 4 min (2 min plus 2 min) SPR baked at 110C for 2 min pre expose and post expose. Plasma for 1 min prior to etch. Initial resist thickness 2.5 um
 +
|-
 +
| Si3N4 || ICP#2 || ||nano etch # 104 || ~140nm/min || MAY 27, 2012 || Jock|| [[media:ICP2_CF4-CHF3-O2_Deep_Nano_Etch.pptx]] || Low polymer build up on this etch allows small features. CF4/CHF3/O2 5/35/10sccm 500/50W 0.5Pa
 +
|-
 +
| UV-6 || ICP#2 || ||nano etch # 104 || ~120nm/min || MAY 27, 2012 || Jock|| [[media:ICP2_CF4-CHF3-O2_Deep_Nano_Etch.pptx]] || Low polymer build up on this etch allows small features. CF4/CHF3/O2 5/35/10sccm 500/50W 0.5Pa
 +
|-
 +
| SPR955-0.9CM || ICP#2 || ||nano etch # 104 || ???|| MAY 27, 2012 || Jock|| [[media:ICP2_CF4-CHF3-O2_Deep_Nano_Etch.pptx]] || Low polymer build up on this etch allows small features. CF4/CHF3/O2 5/35/10sccm 500/50W 0.5Pa
 +
|-
 +
| DSK-101 || ICP#2 || ||nano etch # 104 || ~142nm/min || MAY 27, 2012 || Jock|| [[media:ICP2_CF4-CHF3-O2_Deep_Nano_Etch.pptx]] || Low polymer build up on this etch allows small features. CF4/CHF3/O2 5/35/10sccm 500/50W 0.5Pa
 +
|-
 +
| Cr || ICP#2 || ||nano etch # 104 || negligible || MAY 27, 2012 || Jock|| [[media:ICP2_CF4-CHF3-O2_Deep_Nano_Etch.pptx]] || Low polymer build up on this etch allows small features. CF4/CHF3/O2 5/35/10sccm 500/50W 0.5Pa
 +
|-
 +
| ZEP or 2:1 ZEP:Anisol || ICP#2 || ||nano etch # 104 ||~142nm/min  || MAY 27, 2012 || Jock|| [[media:ICP2_CF4-CHF3-O2_Deep_Nano_Etch.pptx]] || Low polymer build up on this etch allows small features. CF4/CHF3/O2 5/35/10sccm 500/50W 0.5Pa
 
|-
 
|-
 
| Cured SU8 (260 C for 30 min) || ICP#2 ||SOI ||aSi SF6 based etch # 156 (200W) ||~275 nm/min || JUN 1, 2010 || Geza ||  ||  
 
| Cured SU8 (260 C for 30 min) || ICP#2 ||SOI ||aSi SF6 based etch # 156 (200W) ||~275 nm/min || JUN 1, 2010 || Geza ||  ||  
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|-
 
|-
 
| Cured SU8 (260 C for 30 min) || ICP#2 ||SOI ||aSi SF6 based etch # 156 (300W + 40 sccm O2) ||~690 nm/min || JUN 1, 2010 || Geza ||  || Use cured (115C/15min) SPR220-7 as mask, mask etched at ~550nm/min. Carefully check mask for cracking.
 
| Cured SU8 (260 C for 30 min) || ICP#2 ||SOI ||aSi SF6 based etch # 156 (300W + 40 sccm O2) ||~690 nm/min || JUN 1, 2010 || Geza ||  || Use cured (115C/15min) SPR220-7 as mask, mask etched at ~550nm/min. Carefully check mask for cracking.
 +
|-
 +
| Cured BCB (250 C for 60 min) || ICP#1 ||SOI ||CF4 based etch # 308 (1000W + 50:200 sccm CF4:O2) ||~400 nm/min || JUN 1, 2012 || Jared H ||  ||
 +
|-
 +
| SiO2 and Si || ICP#2 ||Si ||SF6-O2 ICP2 #124 ||280-360nm/m|| JUN 08, 2012 || Jon Peters || [[media:20120608_SF6_Silicon_etch.pptx]] || 30/10sccm SF6/O2, 400/50W ICP/RF, 1.0 Pa
 +
|-
 +
| Sputtered W || ICP#1/2 ||Si ||SF6-Ar, #197/#174 ICP#1/2) ||~70 nm/m|| NOV 02, 2012 || Geza || || Rodwell recipe (Johann): 5/5 sccm SF6/Ar, 600/20W ICP/RF, selectivity to InGaAs > 10:1
 
|-
 
|-
 
|}
 
|}
  
−
 
+
===Wet Etch===
 
{| border="3"
 
{| border="3"
−
|+ '''Wet Etch'''
 
 
|- style="background:purple; color:white"
 
|- style="background:purple; color:white"
 
! Etched material !!  Solution !! Mask !! Latest etch rate !! Latest update date !! Latest update by !! Calib. file !! Note  
 
! Etched material !!  Solution !! Mask !! Latest etch rate !! Latest update date !! Latest update by !! Calib. file !! Note  
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|-
 
|-
 
| Cured SU8 (260 C for 30 min)|| Piranha (150mL H2SO4 + 50mL H2O2) ||  || ~500nm/s (v. fast) || MAY 27, 2010 || Geza ||   || Piranha does not attack SiN or Gold, suspect heavy undercut but have no data
 
| Cured SU8 (260 C for 30 min)|| Piranha (150mL H2SO4 + 50mL H2O2) ||  || ~500nm/s (v. fast) || MAY 27, 2010 || Geza ||   || Piranha does not attack SiN or Gold, suspect heavy undercut but have no data
−
| Titanium || BHF ||  || ~3.33nm/s (order of magnitude estimate) || JULY 5, 2010 || Geza ||   || If you use PR as a mask AND if you etch for >5min, cure PR at 115C for 15min
 
 
|-
 
|-
 +
| Titanium (sputtered) || BHF || PR || ~3.33nm/s (order of magnitude estimate) || JULY 5, 2010 || Geza ||   || If you etch for >5min, cure PR at 115C for 15min prior to etch
 +
|-
 +
| Pd || Au etchant (TFA) || PR || ~1.8nm/s || Oct 15, 2012 || Geza ||   || PR cured at 115 C for 5 min prior to etch, etch stops on InGaAs
 +
|-
 +
| Ta2O5 || HF || no mask used || ~100nm/s  || JUNE 1, 2011 || Geza ||   ||  
 +
|-
 +
| Sputtered W || H2O2 (20 C) || no mask used || ~50 nm/min (~100 nm/min @ 50 C) || Nov 1, 2012 || Geza ||   || unpatterned samples etched fine (no bubbling), patterned samples did not etch (lots of bubbling)
 
|}
 
|}
  
−
 
+
===Dielectric Deposit===
 
{| border="3"
 
{| border="3"
−
|+ '''Dielectric Deposit'''
 
 
|- style="background:blue; color:white"
 
|- style="background:blue; color:white"
 
! Material !! Equipment !! Latest deposit rate !! Latest update date !! Latest update by !! Calib. file !! Note  
 
! Material !! Equipment !! Latest deposit rate !! Latest update date !! Latest update by !! Calib. file !! Note  
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| SiO2 || PECVD ||   ||   ||   ||   ||  
 
| SiO2 || PECVD ||   ||   ||   ||   ||  
 
|-
 
|-
−
| Ta2O5 || Ebeam #2 || 1A/sec ||   || Hui-Wen || [[media:AR_Coating.xlsx|Script]] || Deposit 180nm on blank Si sample, measure index and thickness, calculate required thickness from index (use Excel script), deposit dielectric on both facets (one at a time). Generally 180nm, n~2.15, purple color.
+
| Ta2O5 || Ebeam #2 || 1A/sec ||   || Hui-Wen ||   || Deposit 203nm on blank Si sample (do BHF dip before deposition), measure index and thickness on ellipsometer (Filmetrics is not good for this), calculate required thickness from index (http://optoelectronics.ece.ucsb.edu/oewiki/index.php/Simulation/multiFilm), deposit dielectric on both facets (one at a time). Generally need 203nm for 7 degree facets, Ta2O5 index ~2.0, purple color.
 +
|-
 +
| SrF2 || Ebeam #2 || 2-5A/sec ||   || Jon P||   || Per Je-Hyeong on Nov 16, 2010. Target 200 nm, measured 350 nm. Target 300 nm, measured 450 nm. For liftoff process only use 1165-ISO for liftoff because DI will dissolve SrF2 in 2-3 minutes.
 +
|}
 +
 
 +
===Metal deposition===
 +
W deposition in Sputter 4 [[media:2013_09_16_W_Sputter_FilmStress.pptx|Report on film stress]]
 +
 
 +
===Lithography===
 +
{| border="3"
 +
|- style="background:red; color:black"
 +
! Equipment !! Resist !!  Polarity !! Hardmask !! Substrate !! Pre-Exposure Bake !! Exposure Dose !! Focus !! Post-Exposure Bake !! Development !! Report !! Author
 +
|-
 +
| Autostepper || SPR 955 0.9 ||Positive||200nm PECVD Oxide ||GaAs (should work with Si, SOI, and InP also)|| 95C,90s || ~.42s report variable || 0 ||110C,90s || MIF726,40s || [[media:Taper_Tip_Reduction_Process_Development.pptx|Over-exposure Pattern Reduction]] || Jock
 +
 
 +
|-
 +
|}
 +
 
 +
 
 +
 
 +
===Thermal oxidation===
 +
{| border="3"
 +
|- style="background:aqua; color:black"
 +
! Dry/wet !! Temperature !!  Material !! File link
 +
|-
 +
| Wet || 1050C ||  Si || [[File:Wetox_1050.xlsx]]
 +
 
 
|-
 
|-
 
|}
 
|}

Latest revision as of 10:19, 1 November 2013

  • List of etch and deposit rate for cleanroom tools. Each file includes the recipe being used and the calibrated etch rate.
  • Please update yours if you run any calibration so that everyone can keep track of them.
  • Wet etch recipes:
http://www.cleanroom.byu.edu/wet_etch.phtml
http://terpconnect.umd.edu/~browns/wetetch.html
http://140.120.11.121/~vincent/tools/etch/wetchemicaletch.php
  • Dry etch recipes:
http://www.tnw.tudelft.nl/over-faculteit/afdelingen/quantum-nanoscience/medewerkers/onderzoeksgroepen/kavli-nanolab-delft/facility/process-recipes/dry-etch-recipes/
  • Refractive indexes:
http://refractiveindex.info/


Dry Etch[edit]

Etched material Equipment Substrate Recipe Latest etch rate Latest update date Latest update by Calib. file Note
Si ICP#2 SOI Bowers si etch # 127 4nm/s JUN 12, 2010 Jon Peters ICP#2 si etch rate 40/20sccm BCl3/Cl2, 500/120W ICP/RF, 2.5Pa
SiO2 ICP#2 SOI SiOxVert, recipe #101 ~252nm/min NOV 9, 2010; Molly Media:SiO2_Vert.pdf 40sccm CHF3, 900/200W ICP/RF, 0.5Pa
SiN ICP#2 SOI SiOxVert, recipe #101 ~300nm/min   Geza   40sccm CHF3, 900/200W ICP/RF, 0.5Pa
SiN PE-CVD RIE#2 SOI MHA, 4/20/10 See note Sept 26, 2011; JonP   Methane/Hydrogen/Ar, 500V, , 75mT. Polymer buildup on SiN during the etch. Etch delta not seen post 10 min 02 300W 125mT plasma in RIE2.
Cured SU8 (260 C for 30 min) ICP#2 SOI Bowers SiOxVert etch # 101 ~111 nm/min MAY 27, 2010 Geza  
PECVD#1 SiO2 ICP#2 nano etch # 104 ~60nm/min MAY 27, 2012 Jock media:ICP2_CF4-CHF3-O2_Deep_Nano_Etch.pptx Low polymer build up on this etch allows small features. CF4/CHF3/O2 5/35/10sccm 500/50W 0.5 Pa
PECVD#1 SiO2 ICP#2 GC-SiN # 181 ~80-100nm/min Nov 1, 2013 Jon P CF4/O2 50/5 sccm 500/25W 2.0 Pa. Etch rate mostly ~83nm/min but one flyer at 97 nm/min
SPR 220 3um ICP#2 GC-SiN # 181 ~184nm/min Nov 1, 2013 Jon P CF4/O2 50/5 sccm 500/25W 2.0 Pa. Etched for 4 min (2 min plus 2 min) SPR baked at 110C for 2 min pre expose and post expose. Plasma for 1 min prior to etch. Initial resist thickness 2.5 um
Si3N4 ICP#2 nano etch # 104 ~140nm/min MAY 27, 2012 Jock media:ICP2_CF4-CHF3-O2_Deep_Nano_Etch.pptx Low polymer build up on this etch allows small features. CF4/CHF3/O2 5/35/10sccm 500/50W 0.5Pa
UV-6 ICP#2 nano etch # 104 ~120nm/min MAY 27, 2012 Jock media:ICP2_CF4-CHF3-O2_Deep_Nano_Etch.pptx Low polymer build up on this etch allows small features. CF4/CHF3/O2 5/35/10sccm 500/50W 0.5Pa
SPR955-0.9CM ICP#2 nano etch # 104  ??? MAY 27, 2012 Jock media:ICP2_CF4-CHF3-O2_Deep_Nano_Etch.pptx Low polymer build up on this etch allows small features. CF4/CHF3/O2 5/35/10sccm 500/50W 0.5Pa
DSK-101 ICP#2 nano etch # 104 ~142nm/min MAY 27, 2012 Jock media:ICP2_CF4-CHF3-O2_Deep_Nano_Etch.pptx Low polymer build up on this etch allows small features. CF4/CHF3/O2 5/35/10sccm 500/50W 0.5Pa
Cr ICP#2 nano etch # 104 negligible MAY 27, 2012 Jock media:ICP2_CF4-CHF3-O2_Deep_Nano_Etch.pptx Low polymer build up on this etch allows small features. CF4/CHF3/O2 5/35/10sccm 500/50W 0.5Pa
ZEP or 2:1 ZEP:Anisol ICP#2 nano etch # 104 ~142nm/min MAY 27, 2012 Jock media:ICP2_CF4-CHF3-O2_Deep_Nano_Etch.pptx Low polymer build up on this etch allows small features. CF4/CHF3/O2 5/35/10sccm 500/50W 0.5Pa
Cured SU8 (260 C for 30 min) ICP#2 SOI aSi SF6 based etch # 156 (200W) ~275 nm/min JUN 1, 2010 Geza  
Cured SU8 (260 C for 30 min) ICP#2 SOI aSi SF6 based etch # 156 (200W + 40 sccm O2) ~465 nm/min JUN 1, 2010 Geza  
Cured SU8 (260 C for 30 min) ICP#2 SOI aSi SF6 based etch # 156 (300W + 40 sccm O2) ~690 nm/min JUN 1, 2010 Geza Use cured (115C/15min) SPR220-7 as mask, mask etched at ~550nm/min. Carefully check mask for cracking.
Cured BCB (250 C for 60 min) ICP#1 SOI CF4 based etch # 308 (1000W + 50:200 sccm CF4:O2) ~400 nm/min JUN 1, 2012 Jared H
SiO2 and Si ICP#2 Si SF6-O2 ICP2 #124 280-360nm/m JUN 08, 2012 Jon Peters media:20120608_SF6_Silicon_etch.pptx 30/10sccm SF6/O2, 400/50W ICP/RF, 1.0 Pa
Sputtered W ICP#1/2 Si SF6-Ar, #197/#174 ICP#1/2) ~70 nm/m NOV 02, 2012 Geza Rodwell recipe (Johann): 5/5 sccm SF6/Ar, 600/20W ICP/RF, selectivity to InGaAs > 10:1

Wet Etch[edit]

Etched material Solution Mask Latest etch rate Latest update date Latest update by Calib. file Note
Thermal oxide BHF PR or dielectric ~100nm/min        
PECVD oxide BHF PR or dielectric ~225nm/min        
PECVD SiN BHF   ~30-50nm/min   Jon P.    
PECVD SiN HF   ~500nm/min   Geza   PR does not survive as a mask
Cured SU8 (260 C for 30 min) Piranha (150mL H2SO4 + 50mL H2O2)   ~500nm/s (v. fast) MAY 27, 2010 Geza   Piranha does not attack SiN or Gold, suspect heavy undercut but have no data
Titanium (sputtered) BHF PR ~3.33nm/s (order of magnitude estimate) JULY 5, 2010 Geza   If you etch for >5min, cure PR at 115C for 15min prior to etch
Pd Au etchant (TFA) PR ~1.8nm/s Oct 15, 2012 Geza   PR cured at 115 C for 5 min prior to etch, etch stops on InGaAs
Ta2O5 HF no mask used ~100nm/s JUNE 1, 2011 Geza    
Sputtered W H2O2 (20 C) no mask used ~50 nm/min (~100 nm/min @ 50 C) Nov 1, 2012 Geza   unpatterned samples etched fine (no bubbling), patterned samples did not etch (lots of bubbling)

Dielectric Deposit[edit]

Material Equipment Latest deposit rate Latest update date Latest update by Calib. file Note
SiN PECVD          
SiO2 PECVD          
Ta2O5 Ebeam #2 1A/sec   Hui-Wen   Deposit 203nm on blank Si sample (do BHF dip before deposition), measure index and thickness on ellipsometer (Filmetrics is not good for this), calculate required thickness from index (http://optoelectronics.ece.ucsb.edu/oewiki/index.php/Simulation/multiFilm), deposit dielectric on both facets (one at a time). Generally need 203nm for 7 degree facets, Ta2O5 index ~2.0, purple color.
SrF2 Ebeam #2 2-5A/sec   Jon P   Per Je-Hyeong on Nov 16, 2010. Target 200 nm, measured 350 nm. Target 300 nm, measured 450 nm. For liftoff process only use 1165-ISO for liftoff because DI will dissolve SrF2 in 2-3 minutes.

Metal deposition[edit]

W deposition in Sputter 4 Report on film stress

Lithography[edit]

Equipment Resist Polarity Hardmask Substrate Pre-Exposure Bake Exposure Dose Focus Post-Exposure Bake Development Report Author
Autostepper SPR 955 0.9 Positive 200nm PECVD Oxide GaAs (should work with Si, SOI, and InP also) 95C,90s ~.42s report variable 0 110C,90s MIF726,40s Over-exposure Pattern Reduction Jock


Thermal oxidation[edit]

Dry/wet Temperature Material File link
Wet 1050C Si File:Wetox 1050.xlsx
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