Difference between revisions of "Cleanroom Reports"
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:http://www.cleanroom.byu.edu/wet_etch.phtml | :http://www.cleanroom.byu.edu/wet_etch.phtml | ||
:http://terpconnect.umd.edu/~browns/wetetch.html | :http://terpconnect.umd.edu/~browns/wetetch.html | ||
+ | :http://140.120.11.121/~vincent/tools/etch/wetchemicaletch.php | ||
+ | *Dry etch recipes: | ||
+ | :http://www.tnw.tudelft.nl/over-faculteit/afdelingen/quantum-nanoscience/medewerkers/onderzoeksgroepen/kavli-nanolab-delft/facility/process-recipes/dry-etch-recipes/ | ||
*Refractive indexes: | *Refractive indexes: | ||
:http://refractiveindex.info/ | :http://refractiveindex.info/ | ||
+ | ===Dry Etch=== | ||
{| border="3" | {| border="3" | ||
− | |||
|- style="background:green; color:white" | |- style="background:green; color:white" | ||
! Etched material !! Equipment !! Substrate !!Recipe !! Latest etch rate !! Latest update date !! Latest update by !! Calib. file !! Note | ! Etched material !! Equipment !! Substrate !!Recipe !! Latest etch rate !! Latest update date !! Latest update by !! Calib. file !! Note | ||
|- | |- | ||
− | | Si || ICP#2 ||SOI ||Bowers si etch # 127 ||4nm/s|| JUN 12, 2010 || Jon Peters || [[media:100402_ICP-2_si_etch_calibration.xls|ICP#2 si etch rate]] || | + | | Si || ICP#2 ||SOI ||Bowers si etch # 127 ||4nm/s|| JUN 12, 2010 || Jon Peters || [[media:100402_ICP-2_si_etch_calibration.xls|ICP#2 si etch rate]] || 40/20sccm BCl3/Cl2, 500/120W ICP/RF, 2.5Pa |
|- | |- | ||
− | | SiO2 || ICP#2 ||SOI ||SiOxVert, recipe #101|| ~252nm/min|| NOV 9, 2010; || Molly || [[Media:SiO2_Vert.pdf]] || | + | | SiO2 || ICP#2 ||SOI ||SiOxVert, recipe #101|| ~252nm/min|| NOV 9, 2010; || Molly || [[Media:SiO2_Vert.pdf]] || 40sccm CHF3, 900/200W ICP/RF, 0.5Pa |
|- | |- | ||
− | | SiN || ICP#2 ||SOI ||SiOxVert, recipe #101|| ~300nm/min|| || Geza || || | + | | SiN || ICP#2 ||SOI ||SiOxVert, recipe #101|| ~300nm/min|| || Geza || || 40sccm CHF3, 900/200W ICP/RF, 0.5Pa |
+ | |- | ||
+ | | SiN PE-CVD || RIE#2 ||SOI ||MHA, 4/20/10||See note|| Sept 26, 2011; || JonP || || Methane/Hydrogen/Ar, 500V, , 75mT. Polymer buildup on SiN during the etch. Etch delta not seen post 10 min 02 300W 125mT plasma in RIE2. | ||
|- | |- | ||
| Cured SU8 (260 C for 30 min) || ICP#2 ||SOI ||Bowers SiOxVert etch # 101 ||~111 nm/min || MAY 27, 2010 || Geza || || | | Cured SU8 (260 C for 30 min) || ICP#2 ||SOI ||Bowers SiOxVert etch # 101 ||~111 nm/min || MAY 27, 2010 || Geza || || | ||
+ | |- | ||
+ | | PECVD#1 SiO2 || ICP#2 || ||nano etch # 104 || ~60nm/min || MAY 27, 2012 || Jock|| [[media:ICP2_CF4-CHF3-O2_Deep_Nano_Etch.pptx]] || Low polymer build up on this etch allows small features. CF4/CHF3/O2 5/35/10sccm 500/50W 0.5 Pa | ||
+ | |- | ||
+ | | PECVD#1 SiO2 || ICP#2 || ||GC-SiN # 181 || ~80-100nm/min || Nov 1, 2013 || Jon P|| || CF4/O2 50/5 sccm 500/25W 2.0 Pa. Etch rate mostly ~83nm/min but one flyer at 97 nm/min | ||
+ | |- | ||
+ | | SPR 220 3um || ICP#2 || ||GC-SiN # 181 || ~184nm/min || Nov 1, 2013 || Jon P|| || CF4/O2 50/5 sccm 500/25W 2.0 Pa. Etched for 4 min (2 min plus 2 min) SPR baked at 110C for 2 min pre expose and post expose. Plasma for 1 min prior to etch. Initial resist thickness 2.5 um | ||
+ | |- | ||
+ | | Si3N4 || ICP#2 || ||nano etch # 104 || ~140nm/min || MAY 27, 2012 || Jock|| [[media:ICP2_CF4-CHF3-O2_Deep_Nano_Etch.pptx]] || Low polymer build up on this etch allows small features. CF4/CHF3/O2 5/35/10sccm 500/50W 0.5Pa | ||
+ | |- | ||
+ | | UV-6 || ICP#2 || ||nano etch # 104 || ~120nm/min || MAY 27, 2012 || Jock|| [[media:ICP2_CF4-CHF3-O2_Deep_Nano_Etch.pptx]] || Low polymer build up on this etch allows small features. CF4/CHF3/O2 5/35/10sccm 500/50W 0.5Pa | ||
+ | |- | ||
+ | | SPR955-0.9CM || ICP#2 || ||nano etch # 104 || ???|| MAY 27, 2012 || Jock|| [[media:ICP2_CF4-CHF3-O2_Deep_Nano_Etch.pptx]] || Low polymer build up on this etch allows small features. CF4/CHF3/O2 5/35/10sccm 500/50W 0.5Pa | ||
+ | |- | ||
+ | | DSK-101 || ICP#2 || ||nano etch # 104 || ~142nm/min || MAY 27, 2012 || Jock|| [[media:ICP2_CF4-CHF3-O2_Deep_Nano_Etch.pptx]] || Low polymer build up on this etch allows small features. CF4/CHF3/O2 5/35/10sccm 500/50W 0.5Pa | ||
+ | |- | ||
+ | | Cr || ICP#2 || ||nano etch # 104 || negligible || MAY 27, 2012 || Jock|| [[media:ICP2_CF4-CHF3-O2_Deep_Nano_Etch.pptx]] || Low polymer build up on this etch allows small features. CF4/CHF3/O2 5/35/10sccm 500/50W 0.5Pa | ||
+ | |- | ||
+ | | ZEP or 2:1 ZEP:Anisol || ICP#2 || ||nano etch # 104 ||~142nm/min || MAY 27, 2012 || Jock|| [[media:ICP2_CF4-CHF3-O2_Deep_Nano_Etch.pptx]] || Low polymer build up on this etch allows small features. CF4/CHF3/O2 5/35/10sccm 500/50W 0.5Pa | ||
|- | |- | ||
| Cured SU8 (260 C for 30 min) || ICP#2 ||SOI ||aSi SF6 based etch # 156 (200W) ||~275 nm/min || JUN 1, 2010 || Geza || || | | Cured SU8 (260 C for 30 min) || ICP#2 ||SOI ||aSi SF6 based etch # 156 (200W) ||~275 nm/min || JUN 1, 2010 || Geza || || | ||
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|- | |- | ||
| Cured SU8 (260 C for 30 min) || ICP#2 ||SOI ||aSi SF6 based etch # 156 (300W + 40 sccm O2) ||~690 nm/min || JUN 1, 2010 || Geza || || Use cured (115C/15min) SPR220-7 as mask, mask etched at ~550nm/min. Carefully check mask for cracking. | | Cured SU8 (260 C for 30 min) || ICP#2 ||SOI ||aSi SF6 based etch # 156 (300W + 40 sccm O2) ||~690 nm/min || JUN 1, 2010 || Geza || || Use cured (115C/15min) SPR220-7 as mask, mask etched at ~550nm/min. Carefully check mask for cracking. | ||
+ | |- | ||
+ | | Cured BCB (250 C for 60 min) || ICP#1 ||SOI ||CF4 based etch # 308 (1000W + 50:200 sccm CF4:O2) ||~400 nm/min || JUN 1, 2012 || Jared H || || | ||
+ | |- | ||
+ | | SiO2 and Si || ICP#2 ||Si ||SF6-O2 ICP2 #124 ||280-360nm/m|| JUN 08, 2012 || Jon Peters || [[media:20120608_SF6_Silicon_etch.pptx]] || 30/10sccm SF6/O2, 400/50W ICP/RF, 1.0 Pa | ||
+ | |- | ||
+ | | Sputtered W || ICP#1/2 ||Si ||SF6-Ar, #197/#174 ICP#1/2) ||~70 nm/m|| NOV 02, 2012 || Geza || || Rodwell recipe (Johann): 5/5 sccm SF6/Ar, 600/20W ICP/RF, selectivity to InGaAs > 10:1 | ||
|- | |- | ||
|} | |} | ||
− | + | ===Wet Etch=== | |
{| border="3" | {| border="3" | ||
− | |||
|- style="background:purple; color:white" | |- style="background:purple; color:white" | ||
! Etched material !! Solution !! Mask !! Latest etch rate !! Latest update date !! Latest update by !! Calib. file !! Note | ! Etched material !! Solution !! Mask !! Latest etch rate !! Latest update date !! Latest update by !! Calib. file !! Note | ||
Line 47: | Line 75: | ||
| Titanium (sputtered) || BHF || PR || ~3.33nm/s (order of magnitude estimate) || JULY 5, 2010 || Geza || || If you etch for >5min, cure PR at 115C for 15min prior to etch | | Titanium (sputtered) || BHF || PR || ~3.33nm/s (order of magnitude estimate) || JULY 5, 2010 || Geza || || If you etch for >5min, cure PR at 115C for 15min prior to etch | ||
|- | |- | ||
− | | Ta2O5 || HF || no mask used || ~100nm/s || JUNE 1, 2011 || Geza || || |- | + | | Pd || Au etchant (TFA) || PR || ~1.8nm/s || Oct 15, 2012 || Geza || || PR cured at 115 C for 5 min prior to etch, etch stops on InGaAs |
+ | |- | ||
+ | | Ta2O5 || HF || no mask used || ~100nm/s || JUNE 1, 2011 || Geza || || | ||
+ | |- | ||
+ | | Sputtered W || H2O2 (20 C) || no mask used || ~50 nm/min (~100 nm/min @ 50 C) || Nov 1, 2012 || Geza || || unpatterned samples etched fine (no bubbling), patterned samples did not etch (lots of bubbling) | ||
|} | |} | ||
− | + | ===Dielectric Deposit=== | |
{| border="3" | {| border="3" | ||
− | |||
|- style="background:blue; color:white" | |- style="background:blue; color:white" | ||
! Material !! Equipment !! Latest deposit rate !! Latest update date !! Latest update by !! Calib. file !! Note | ! Material !! Equipment !! Latest deposit rate !! Latest update date !! Latest update by !! Calib. file !! Note | ||
Line 60: | Line 91: | ||
| SiO2 || PECVD || || || || || | | SiO2 || PECVD || || || || || | ||
|- | |- | ||
− | | Ta2O5 || Ebeam #2 || 1A/sec || || Hui-Wen || || Deposit 203nm on blank Si sample (do BHF dip before deposition), measure index and thickness on ellipsometer (Filmetrics is not good for this), calculate required thickness from index (), deposit dielectric on both facets (one at a time). Generally need 203nm, | + | | Ta2O5 || Ebeam #2 || 1A/sec || || Hui-Wen || || Deposit 203nm on blank Si sample (do BHF dip before deposition), measure index and thickness on ellipsometer (Filmetrics is not good for this), calculate required thickness from index (http://optoelectronics.ece.ucsb.edu/oewiki/index.php/Simulation/multiFilm), deposit dielectric on both facets (one at a time). Generally need 203nm for 7 degree facets, Ta2O5 index ~2.0, purple color. |
|- | |- | ||
| SrF2 || Ebeam #2 || 2-5A/sec || || Jon P|| || Per Je-Hyeong on Nov 16, 2010. Target 200 nm, measured 350 nm. Target 300 nm, measured 450 nm. For liftoff process only use 1165-ISO for liftoff because DI will dissolve SrF2 in 2-3 minutes. | | SrF2 || Ebeam #2 || 2-5A/sec || || Jon P|| || Per Je-Hyeong on Nov 16, 2010. Target 200 nm, measured 350 nm. Target 300 nm, measured 450 nm. For liftoff process only use 1165-ISO for liftoff because DI will dissolve SrF2 in 2-3 minutes. | ||
+ | |} | ||
+ | |||
+ | ===Metal deposition=== | ||
+ | W deposition in Sputter 4 [[media:2013_09_16_W_Sputter_FilmStress.pptx|Report on film stress]] | ||
+ | |||
+ | ===Lithography=== | ||
+ | {| border="3" | ||
+ | |- style="background:red; color:black" | ||
+ | ! Equipment !! Resist !! Polarity !! Hardmask !! Substrate !! Pre-Exposure Bake !! Exposure Dose !! Focus !! Post-Exposure Bake !! Development !! Report !! Author | ||
+ | |- | ||
+ | | Autostepper || SPR 955 0.9 ||Positive||200nm PECVD Oxide ||GaAs (should work with Si, SOI, and InP also)|| 95C,90s || ~.42s report variable || 0 ||110C,90s || MIF726,40s || [[media:Taper_Tip_Reduction_Process_Development.pptx|Over-exposure Pattern Reduction]] || Jock | ||
+ | |||
+ | |- | ||
+ | |} | ||
+ | |||
+ | |||
+ | |||
+ | ===Thermal oxidation=== | ||
+ | {| border="3" | ||
+ | |- style="background:aqua; color:black" | ||
+ | ! Dry/wet !! Temperature !! Material !! File link | ||
+ | |- | ||
+ | | Wet || 1050C || Si || [[File:Wetox_1050.xlsx]] | ||
+ | |||
+ | |- | ||
|} | |} |
Latest revision as of 10:19, 1 November 2013
- List of etch and deposit rate for cleanroom tools. Each file includes the recipe being used and the calibrated etch rate.
- Please update yours if you run any calibration so that everyone can keep track of them.
- Wet etch recipes:
- http://www.cleanroom.byu.edu/wet_etch.phtml
- http://terpconnect.umd.edu/~browns/wetetch.html
- http://140.120.11.121/~vincent/tools/etch/wetchemicaletch.php
- Dry etch recipes:
- Refractive indexes:
Contents
Dry Etch[edit]
Etched material | Equipment | Substrate | Recipe | Latest etch rate | Latest update date | Latest update by | Calib. file | Note |
---|---|---|---|---|---|---|---|---|
Si | ICP#2 | SOI | Bowers si etch # 127 | 4nm/s | JUN 12, 2010 | Jon Peters | ICP#2 si etch rate | 40/20sccm BCl3/Cl2, 500/120W ICP/RF, 2.5Pa |
SiO2 | ICP#2 | SOI | SiOxVert, recipe #101 | ~252nm/min | NOV 9, 2010; | Molly | Media:SiO2_Vert.pdf | 40sccm CHF3, 900/200W ICP/RF, 0.5Pa |
SiN | ICP#2 | SOI | SiOxVert, recipe #101 | ~300nm/min | Geza | 40sccm CHF3, 900/200W ICP/RF, 0.5Pa | ||
SiN PE-CVD | RIE#2 | SOI | MHA, 4/20/10 | See note | Sept 26, 2011; | JonP | Methane/Hydrogen/Ar, 500V, , 75mT. Polymer buildup on SiN during the etch. Etch delta not seen post 10 min 02 300W 125mT plasma in RIE2. | |
Cured SU8 (260 C for 30 min) | ICP#2 | SOI | Bowers SiOxVert etch # 101 | ~111 nm/min | MAY 27, 2010 | Geza | ||
PECVD#1 SiO2 | ICP#2 | nano etch # 104 | ~60nm/min | MAY 27, 2012 | Jock | media:ICP2_CF4-CHF3-O2_Deep_Nano_Etch.pptx | Low polymer build up on this etch allows small features. CF4/CHF3/O2 5/35/10sccm 500/50W 0.5 Pa | |
PECVD#1 SiO2 | ICP#2 | GC-SiN # 181 | ~80-100nm/min | Nov 1, 2013 | Jon P | CF4/O2 50/5 sccm 500/25W 2.0 Pa. Etch rate mostly ~83nm/min but one flyer at 97 nm/min | ||
SPR 220 3um | ICP#2 | GC-SiN # 181 | ~184nm/min | Nov 1, 2013 | Jon P | CF4/O2 50/5 sccm 500/25W 2.0 Pa. Etched for 4 min (2 min plus 2 min) SPR baked at 110C for 2 min pre expose and post expose. Plasma for 1 min prior to etch. Initial resist thickness 2.5 um | ||
Si3N4 | ICP#2 | nano etch # 104 | ~140nm/min | MAY 27, 2012 | Jock | media:ICP2_CF4-CHF3-O2_Deep_Nano_Etch.pptx | Low polymer build up on this etch allows small features. CF4/CHF3/O2 5/35/10sccm 500/50W 0.5Pa | |
UV-6 | ICP#2 | nano etch # 104 | ~120nm/min | MAY 27, 2012 | Jock | media:ICP2_CF4-CHF3-O2_Deep_Nano_Etch.pptx | Low polymer build up on this etch allows small features. CF4/CHF3/O2 5/35/10sccm 500/50W 0.5Pa | |
SPR955-0.9CM | ICP#2 | nano etch # 104 | ??? | MAY 27, 2012 | Jock | media:ICP2_CF4-CHF3-O2_Deep_Nano_Etch.pptx | Low polymer build up on this etch allows small features. CF4/CHF3/O2 5/35/10sccm 500/50W 0.5Pa | |
DSK-101 | ICP#2 | nano etch # 104 | ~142nm/min | MAY 27, 2012 | Jock | media:ICP2_CF4-CHF3-O2_Deep_Nano_Etch.pptx | Low polymer build up on this etch allows small features. CF4/CHF3/O2 5/35/10sccm 500/50W 0.5Pa | |
Cr | ICP#2 | nano etch # 104 | negligible | MAY 27, 2012 | Jock | media:ICP2_CF4-CHF3-O2_Deep_Nano_Etch.pptx | Low polymer build up on this etch allows small features. CF4/CHF3/O2 5/35/10sccm 500/50W 0.5Pa | |
ZEP or 2:1 ZEP:Anisol | ICP#2 | nano etch # 104 | ~142nm/min | MAY 27, 2012 | Jock | media:ICP2_CF4-CHF3-O2_Deep_Nano_Etch.pptx | Low polymer build up on this etch allows small features. CF4/CHF3/O2 5/35/10sccm 500/50W 0.5Pa | |
Cured SU8 (260 C for 30 min) | ICP#2 | SOI | aSi SF6 based etch # 156 (200W) | ~275 nm/min | JUN 1, 2010 | Geza | ||
Cured SU8 (260 C for 30 min) | ICP#2 | SOI | aSi SF6 based etch # 156 (200W + 40 sccm O2) | ~465 nm/min | JUN 1, 2010 | Geza | ||
Cured SU8 (260 C for 30 min) | ICP#2 | SOI | aSi SF6 based etch # 156 (300W + 40 sccm O2) | ~690 nm/min | JUN 1, 2010 | Geza | Use cured (115C/15min) SPR220-7 as mask, mask etched at ~550nm/min. Carefully check mask for cracking. | |
Cured BCB (250 C for 60 min) | ICP#1 | SOI | CF4 based etch # 308 (1000W + 50:200 sccm CF4:O2) | ~400 nm/min | JUN 1, 2012 | Jared H | ||
SiO2 and Si | ICP#2 | Si | SF6-O2 ICP2 #124 | 280-360nm/m | JUN 08, 2012 | Jon Peters | media:20120608_SF6_Silicon_etch.pptx | 30/10sccm SF6/O2, 400/50W ICP/RF, 1.0 Pa |
Sputtered W | ICP#1/2 | Si | SF6-Ar, #197/#174 ICP#1/2) | ~70 nm/m | NOV 02, 2012 | Geza | Rodwell recipe (Johann): 5/5 sccm SF6/Ar, 600/20W ICP/RF, selectivity to InGaAs > 10:1 |
Wet Etch[edit]
Etched material | Solution | Mask | Latest etch rate | Latest update date | Latest update by | Calib. file | Note |
---|---|---|---|---|---|---|---|
Thermal oxide | BHF | PR or dielectric | ~100nm/min | ||||
PECVD oxide | BHF | PR or dielectric | ~225nm/min | ||||
PECVD SiN | BHF | ~30-50nm/min | Jon P. | ||||
PECVD SiN | HF | ~500nm/min | Geza | PR does not survive as a mask | |||
Cured SU8 (260 C for 30 min) | Piranha (150mL H2SO4 + 50mL H2O2) | ~500nm/s (v. fast) | MAY 27, 2010 | Geza | Piranha does not attack SiN or Gold, suspect heavy undercut but have no data | ||
Titanium (sputtered) | BHF | PR | ~3.33nm/s (order of magnitude estimate) | JULY 5, 2010 | Geza | If you etch for >5min, cure PR at 115C for 15min prior to etch | |
Pd | Au etchant (TFA) | PR | ~1.8nm/s | Oct 15, 2012 | Geza | PR cured at 115 C for 5 min prior to etch, etch stops on InGaAs | |
Ta2O5 | HF | no mask used | ~100nm/s | JUNE 1, 2011 | Geza | ||
Sputtered W | H2O2 (20 C) | no mask used | ~50 nm/min (~100 nm/min @ 50 C) | Nov 1, 2012 | Geza | unpatterned samples etched fine (no bubbling), patterned samples did not etch (lots of bubbling) |
Dielectric Deposit[edit]
Material | Equipment | Latest deposit rate | Latest update date | Latest update by | Calib. file | Note |
---|---|---|---|---|---|---|
SiN | PECVD | |||||
SiO2 | PECVD | |||||
Ta2O5 | Ebeam #2 | 1A/sec | Hui-Wen | Deposit 203nm on blank Si sample (do BHF dip before deposition), measure index and thickness on ellipsometer (Filmetrics is not good for this), calculate required thickness from index (http://optoelectronics.ece.ucsb.edu/oewiki/index.php/Simulation/multiFilm), deposit dielectric on both facets (one at a time). Generally need 203nm for 7 degree facets, Ta2O5 index ~2.0, purple color. | ||
SrF2 | Ebeam #2 | 2-5A/sec | Jon P | Per Je-Hyeong on Nov 16, 2010. Target 200 nm, measured 350 nm. Target 300 nm, measured 450 nm. For liftoff process only use 1165-ISO for liftoff because DI will dissolve SrF2 in 2-3 minutes. |
Metal deposition[edit]
W deposition in Sputter 4 Report on film stress
Lithography[edit]
Equipment | Resist | Polarity | Hardmask | Substrate | Pre-Exposure Bake | Exposure Dose | Focus | Post-Exposure Bake | Development | Report | Author |
---|---|---|---|---|---|---|---|---|---|---|---|
Autostepper | SPR 955 0.9 | Positive | 200nm PECVD Oxide | GaAs (should work with Si, SOI, and InP also) | 95C,90s | ~.42s report variable | 0 | 110C,90s | MIF726,40s | Over-exposure Pattern Reduction | Jock |
Thermal oxidation[edit]
Dry/wet | Temperature | Material | File link |
---|---|---|---|
Wet | 1050C | Si | File:Wetox 1050.xlsx |