Difference between revisions of "Modulator"
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Epitaxy 1470: [[Media:report_0707231-3_110714.pdf|Specs of the 1470nm EPI]] | Epitaxy 1470: [[Media:report_0707231-3_110714.pdf|Specs of the 1470nm EPI]] | ||
− | + | Electrode Design: | |
+ | [[Media:ElectrodeDesign.zip|Scripts for electrode design]] | ||
+ | [[Media:simulation_result_20110914.pptx|Calculation results for different electrode designs]] | ||
Simulation: | Simulation: |
Revision as of 17:04, 16 June 2012
The objective is to develop high speed, low driving voltage, high extinction ratio modulator based on hybrid silicon platform.
Contents
The first generation
Time: 2010
Process
xls file: Media:EAM10_process.xls
slides: Media:EAM10_process.pptx
Mask
Mask files: Media: EAM10_Mask.zip
Related Papers
http://optoelectronics.ece.ucsb.edu/profile/yongbo-tang
The second generation
Time: 2011
Design
Epitaxy 1250: Specs of the 1250nm EPI Epitaxy 1470: Specs of the 1470nm EPI
Electrode Design: Scripts for electrode design Calculation results for different electrode designs
Simulation: Optical mode calculation (for COMSOL), support tilt QW sidewall Optical mode calculation (Fimmwave+Jaredwave), limited to vertical sidewall Taper simulation input script (Fimmwave+Jaredwave), baseline/short pMesa/no pMesa
Process
xls file: Media:EAM11_process.xls
slides: Media:EAM11_process_flow.pptx
Mask
CPW Testing Mask/revised on 20110127 EAM11 Mask Final/revised on 20111128
Report
Q1 report: Study of Integrated Hybrid Silicon Modulators Q1 slides: Comparison of different hybrid modulator design
Presentation
OFC2012:1.3μm Hybrid Silicon Electroabsorption Modulator with Bandwidth beyond 67 GHz OI2012:1.3μm Lumped Hybrid Silicon Electroabsorption Modulator under 1Vpp-Operation