Difference between revisions of "Process Hybrid Silicon"
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Sudharsanan (Talk | contribs) (→EPHI Shuttle run-1 (SOA only)) |
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! Process ID !! Process flow !! Process follower !! Description | ! Process ID !! Process flow !! Process follower !! Description | ||
|- | |- | ||
− | | WG etch || [[media: | + | | WG etch || [[media:Dev-2.2_process_flows.pptx | Complete Flow A]] || [[media:WG Module.docx | Si WG etch]] || Rib waveguide formation, Alignment marks. |
|- | |- | ||
| VC etch || || [[media:VC_module.docx | Si VC etch]] || Vertical channel etch | | VC etch || || [[media:VC_module.docx | Si VC etch]] || Vertical channel etch | ||
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! Process ID !! Process flow !! Process follower !! Description | ! Process ID !! Process flow !! Process follower !! Description | ||
|- | |- | ||
− | | WG etch || [[media: | + | | WG etch || [[media:Dev-2.2_process_flows.pptx | Complete Flow B]] || [[media:WG Module.docx | Si WG etch]] || Rib waveguide formation, Alignment marks. |
|- | |- | ||
| VC etch || || [[media:VC_module.docx | Si VC etch]] || Vertical channel etch | | VC etch || || [[media:VC_module.docx | Si VC etch]] || Vertical channel etch |
Latest revision as of 17:27, 2 October 2012
Contents
Process Development Meeting[edit]
Standardized Process Follower[edit]
File:Hybrid Silicon Process Follower - v1.2.xlsx
Module | Manager | Status | Issues | Current action items |
---|---|---|---|---|
Epitaxy layer design | Sid, Yongbo | - No well-developed design method (tools, softwares?) - No reliable quick-verification method |
- Survey on EPI designs from growers, literature and other groups | |
Initial wafer check | Jon P., Martijn | - No standard set of test structures - Non-uniform test structures |
- Make a list of standard tests (TBD) | |
Dice and cleave | Jared B | |||
SOI waveguide definition | Sudha | - Non-uniformity due to variations in mask thickness (width, profile) - Linewidth reduction |
- Fabricate samples with sputtered and thermal oxide hard mask (11/25/'11) - Quantify width and etch depth variations (11/25/'11) - CEM tests (11/25/'11) - Mask info: UCSB E-Phi Runs | |
SOI grating definition | Jock | - Improve uniformity on grating etch depth from run to run | - None yet; keep calibration run | |
SOI actives definition | Jon D. | - Not tested - Implantation/anneal for doping needs to be characterized - Contact resistance - Heavy ion implant for photodiodes characterization |
- Test structures on upcoming SWEEPER run (est. 01/02/'12) | |
Vertical channel definition | Sudha | - Test mask: ideas due 12/14, mask review 12/20 - Mask info: UCSB E-Phi Runs; | ||
Protection layer definition | Geza | - III-V delamination at edge - Some III/V remains in gap |
- Quantify amount of delamination (11/11/'11) - Test more aggressive III/V removal chemistry (12/02/'11) | |
Quantum well intermixing | Sid | - New process, current research | - Intel QWI project timeline | |
Wafer bonding | Jon P., Di | - Edge delamination - Delamination around e.g. AWGs - Low bonding yield (<50%) |
- Make list of tests and test structures (11/18/'11) - Design test mask, info: UCSB E-Phi Runs | |
Gap fill | Geza | |||
P-mesa definition | Mike | - Expect to move to SiO2 masks - Cause of grass never determined |
- Test SiO2 hardmask on P-mesa etch - Continue scrubbing electrode and running 1 chip at a time to elude grass | |
Lower SCH definition | Mike | - No existing issues | - idem | |
N-InP definition | Mike | - Si waveguides loss increased marginally | - idem | |
N-metal definition | Sid | - Non-reproducible contact resistance | - Test: Ti/Pt, Pd/Ti and Pd/Ge on p-InGaAs - Test: Pd/Ge and Ni/Ge/Au on n-InP - Sequential annealing and resistance measurement (TBD, 2 weeks total after start) - Design epi for improvement and test (TBD) - Make list of potential epi improvements (11/11/'11) | |
P-metal definition | Jock, Sid | - Planarization not tested - Non-reproducible contact resistance |
- Test with PULSAR taper mask (TBD) - Test BCB and SOG (12/09/'11) | |
Ion implantation | Sid | - Do we know the exact implant profile? - When should we implant? |
||
Via definition | Jock | |||
Probe metal definition | Sid | - Open circuit through via - Check sticking with new planarization process |
- Find cause and solution | |
Remove III/V in gap | Geza, Daryl | |||
Dice and polish | Jared(Dice), Geza |
___ Low risk: >95% yield, established process module;
___ Medium risk: ~50% - 95% yield, relatively new process module or minor issues;
___ High risk: <50% yield, non-established process or major issues.
EPHI Shuttle run-1 (SOA only)[edit]
Process ID | Process flow | Process follower | Description |
---|---|---|---|
WG etch | Complete Flow A | Si WG etch | Rib waveguide formation, Alignment marks. |
VC etch | Si VC etch | Vertical channel etch | |
Bonding | Bonding | Plasma assisted wafer bonding guide - Author:Michael D | |
InP-mesa etch | P-mesa etch | Mesa etch to top SCH layer | |
QW wet etch | QW etch | Active layer wet etch | |
N-metal deposition | N-metal deposition | N-metal (Ni/Ge/Au/Ni/Au) | |
Oxide Planarization & Via formation | Planarization & Via etch | 1um oxide deposition & via etch | |
P-/Probepad metal deposition | Probepad metallization | P-/probepad metal stack (Pd/Ti/Pd/Au) |
Process ID | Process flow | Process follower | Description |
---|---|---|---|
WG etch | Complete Flow B | Si WG etch | Rib waveguide formation, Alignment marks. |
VC etch | Si VC etch | Vertical channel etch | |
Bonding | Bonding | Plasma assisted wafer bonding guide - Author:Michael D | |
P-metal deposition | p-metal deposition | P-metal stack (Pd/W) | |
InP-mesa etch | P-mesa etch | Mesa etch to top SCH layer | |
QW wet etch | QW etch | Active layer wet etch | |
N-metal deposition | N-metal deposition | N-metal (Ni/Ge/Au/Ni/Au) | |
Oxide Planarization & Via formation | Planarization & Via etch | 1um oxide deposition & via etch | |
Probepad metal deposition | Probepad metallization | Probepad metal stack (Pd/Ti/Pd/Au) |
Old process followers[edit]
Process ID | Version | Process flow | Process follower | Description |
---|---|---|---|---|
SP-PWD | Si WG etch | Si WG etch | Single etch-step SOI process; passive components | |
SP-VC | Si VC etch | Vertical channel etch | ||
HSP-METCH | Mesa etch | Forms mesa: see page for optimization efforts | ||
HSP-QW | III-V QW etch | Quantum well etch | ||
HSP-NETCH | n-layer etch | Remove n-layer to expose Si | ||
HSP-PTLM | p-TLM step | An additional process step is necessary to pattern p-TLM structures | ||
HSP-METAL | thin metal | Thin metal deposition | ||
HSP-PP | Probe pad deposition | Pattern and deposit probe metal | ||
Wafer bonding | Bonding | Beginner's guide to plasma assisted wafer bonding | ||
Wafer bonding II | direct wafer bonding | O2 plasma assisted wafer bonding (rev. 2008) | ||
Non-planar wafer bonding | non-planar bonding | Non-planar wafer bonding for bonding multiple epis to a single Si piece (see Jon Geske's thesis) | ||
TLM only | TLM only | Post-bond process for use with a TLM-only mask set |
Process ID | Version | Process flow | Process follower | Description |
---|---|---|---|---|
PHASER | 2 | PHASER | PHASER | PHASER (SOAs, thermal phase tuning pads, MMIs) process flow. Alignment mark coordinates |
Epump 2 | process flow | Epump 2 | Mostly designed for lasers, revised 4/6/07. Starts after WG and VC etches. | |
Self-aligned rev. 2 | process flow | self rev. 2 | Self-aligned process, starts after substrate removal, revised 2007. Contains PR spin speeds and exposure times for Stepper (6300) |
Check the Device Run page for more process followers, mask layout files, etc.
Process ID | Version | Process flow | Process follower | Description |
---|---|---|---|---|
PHASER | 1 | PHASER gen 1 | PHASER (SOAs, thermal phase tuning pads, MMIs) process flow. | |
Epump 2 | process flow | Epump 2 | Mostly designed for lasers, revised 4/6/07. Starts after WG and VC etches. | |
Si WG etch | 1 | WG etch | ca. 2008 Si waveguide etch process | |
Si WG etch | 2 | WG etch | Si waveguide etch process with gratings, PR reflow, and vertical channels |