Difference between revisions of "Modulator"
From OptoelectronicsWiki
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== Data == | == Data == | ||
=== TLM === | === TLM === | ||
| + | [[Media:TLM_EAM11-1310-B1-A_beforeSU8.xlsx|EAM11 B1-A (1310nm) before SU8 spin]] | ||
| + | [[Media:TLM_EAM11-1550-B2-A_beforeSU8.xlsx|EAM11 B2-A (1550nm) before SU8 spin]] | ||
| + | [[Media:TLM_EAM11-1310-B1-A.xlsx|EAM11 B1-A (1310nm) after final process]] | ||
| + | [[Media:TLM_EAM11-1310-B1-B.xlsx|EAM11 B1-B (1310nm) after final process]] | ||
| + | [[Media:TLM_EAM11-15500-B2-B.xlsx|EAM11 B2-B (1550nm) after final process]] | ||
== Report == | == Report == | ||
Latest revision as of 16:49, 1 October 2012
The objective is to develop high speed, low driving voltage, high extinction ratio modulator based on hybrid silicon platform.
Contents
The first generation[edit]
Time: 2010
Process[edit]
xls file: Media:EAM10_process.xls slides: Media:EAM10_process.pptx
Mask[edit]
Mask files: Media: EAM10_Mask.zip
Presentation[edit]
OFC2011: Over 40 GHz Traveling-Wave Electroabsorption Modulator Based on Hybrid Silicon Platform
Related Papers[edit]
http://optoelectronics.ece.ucsb.edu/profile/yongbo-tang
The second generation[edit]
Time: 2011
Design[edit]
Epitaxy 1250: Specs of the 1250nm EPI Epitaxy 1470: Specs of the 1470nm EPI
Electrode Design: Scripts for electrode design Calculation results for different electrode designs
Simulation: Optical mode calculation (for COMSOL), support tilt QW sidewall Optical mode calculation (Fimmwave+Jaredwave), limited to vertical sidewall Taper simulation input script (Fimmwave+Jaredwave), baseline/short pMesa/no pMesa
Process[edit]
xls file: Media:EAM11_process.xls slides: Media:EAM11_process_flow.pptx implantation: Media: EAM11_implantation.zip AR coating: Media: EAM11_ARCoating.zip
Mask[edit]
CPW Testing Mask (revised on 20110127) EAM11 Mask Final (revised on 20111128) EAM11 Mask Map (revised on 20120828) EAM11 Mask Design Overview (revised on 20120828)
Data[edit]
=== TLM === EAM11 B1-A (1310nm) before SU8 spin EAM11 B2-A (1550nm) before SU8 spin EAM11 B1-A (1310nm) after final process EAM11 B1-B (1310nm) after final process EAM11 B2-B (1550nm) after final process
Report[edit]
Q1 report: Study of Integrated Hybrid Silicon Modulators Q1 slides: Comparison of different hybrid modulator design
Presentation[edit]
OFC2012：1.3μm Hybrid Silicon Electroabsorption Modulator with Bandwidth beyond 67 GHz OI2012：1.3μm Lumped Hybrid Silicon Electroabsorption Modulator under 1Vpp-Operation
