Difference between revisions of "Modulator"
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The objective is to develop high speed, low driving voltage, high extinction ratio modulator based on hybrid silicon platform. | The objective is to develop high speed, low driving voltage, high extinction ratio modulator based on hybrid silicon platform. | ||
| − | = | + | = The first generation = |
| − | + | Time: 2010 | |
| − | + | ||
== Process == | == Process == | ||
| − | + | xls file: [[Media:EAM10_process.xls]] | |
| + | |||
| + | slides: [[Media:EAM10_process.pptx]] | ||
| − | = | + | == Mask == |
| + | Mask files: [[Media: EAM10_Mask.zip]] | ||
| + | |||
| + | == Presentation == | ||
| + | |||
| + | [[Media:W0100P_Y_Tang.pptx|OFC2011: Over 40 GHz Traveling-Wave Electroabsorption Modulator Based on Hybrid Silicon Platform]] | ||
| + | |||
| + | == Related Papers == | ||
| + | http://optoelectronics.ece.ucsb.edu/profile/yongbo-tang | ||
| + | |||
| + | = The second generation = | ||
| + | Time: 2011 | ||
== Design == | == Design == | ||
| + | |||
| + | Epitaxy 1250: [[Media:report_0707231-2_110714.pdf|Specs of the 1250nm EPI]] | ||
| + | |||
| + | Epitaxy 1470: [[Media:report_0707231-3_110714.pdf|Specs of the 1470nm EPI]] | ||
| + | |||
| + | Electrode Design: | ||
| + | |||
| + | [[Media:ElectrodeDesign.zip|Scripts for electrode design]] | ||
| + | |||
| + | [[Media:simulation_result_20110914.pptx|Calculation results for different electrode designs]] | ||
| + | |||
| + | Simulation: | ||
| + | |||
| + | [[Media:Hybrid_optical_EAM_1550nm_polarization_structure_up_stand.m|Optical mode calculation (for COMSOL), support tilt QW sidewall]] | ||
| + | |||
| + | [[Media:HybridWaveguideCrossSection.zip|Optical mode calculation (Fimmwave+Jaredwave), limited to vertical sidewall]] | ||
| + | |||
| + | [[Media:HybridEAM11_Taper.zip|Taper simulation input script (Fimmwave+Jaredwave), baseline/short pMesa/no pMesa]] | ||
== Process == | == Process == | ||
| + | |||
| + | xls file: [[Media:EAM11_process.xls]] | ||
| + | |||
| + | slides: [[Media:EAM11_process_flow.pptx]] | ||
| + | |||
| + | implantation: [[Media: EAM11_implantation.zip]] | ||
| + | |||
| + | AR coating: [[Media: EAM11_ARCoating.zip]] | ||
| + | |||
| + | == Mask == | ||
| + | |||
| + | [[Media:CPW_Test.zip|CPW Testing Mask (revised on 20110127)]] | ||
| + | |||
| + | [[Media:EAM11_mask_final.zip|EAM11 Mask Final (revised on 20111128)]] | ||
| + | |||
| + | [[Media:EAM11_mask_map.pptx|EAM11 Mask Map (revised on 20120828)]] | ||
| + | |||
| + | [[Media:EAM11_mask_overview.pptx|EAM11 Mask Design Overview (revised on 20120828)]] | ||
| + | |||
| + | == Data == | ||
| + | === TLM === | ||
| + | [[Media:TLM_EAM11-1310-B1-A_beforeSU8.xlsx|EAM11 B1-A (1310nm) before SU8 spin]] | ||
| + | [[Media:TLM_EAM11-1550-B2-A_beforeSU8.xlsx|EAM11 B2-A (1550nm) before SU8 spin]] | ||
| + | [[Media:TLM_EAM11-1310-B1-A.xlsx|EAM11 B1-A (1310nm) after final process]] | ||
| + | [[Media:TLM_EAM11-1310-B1-B.xlsx|EAM11 B1-B (1310nm) after final process]] | ||
| + | [[Media:TLM_EAM11-15500-B2-B.xlsx|EAM11 B2-B (1550nm) after final process]] | ||
== Report == | == Report == | ||
| + | |||
| + | Q1 report: [[Media:Q1_report_Paper_Study_of_hybrid_modulators_v1.docx|Study of Integrated Hybrid Silicon Modulators]] | ||
| + | |||
| + | Q1 slides: [[Media:comparison_of_different_modulator_design_v1p5.pptx|Comparison of different hybrid modulator design]] | ||
| + | |||
| + | == Presentation == | ||
| + | |||
| + | [[Media:OFC2012_Y_Tang_v2.2.pptx|OFC2012：1.3μm Hybrid Silicon Electroabsorption Modulator with Bandwidth beyond 67 GHz]] | ||
| + | |||
| + | [[Media:OI2012_Y_Tang.pptx|OI2012：1.3μm Lumped Hybrid Silicon Electroabsorption Modulator under 1Vpp-Operation]] | ||
| + | |||
| + | == Related Papers == | ||
| + | http://optoelectronics.ece.ucsb.edu/profile/yongbo-tang | ||
Latest revision as of 16:49, 1 October 2012
The objective is to develop high speed, low driving voltage, high extinction ratio modulator based on hybrid silicon platform.
Contents
The first generation[edit]
Time: 2010
Process[edit]
xls file: Media:EAM10_process.xls slides: Media:EAM10_process.pptx
Mask[edit]
Mask files: Media: EAM10_Mask.zip
Presentation[edit]
OFC2011: Over 40 GHz Traveling-Wave Electroabsorption Modulator Based on Hybrid Silicon Platform
Related Papers[edit]
http://optoelectronics.ece.ucsb.edu/profile/yongbo-tang
The second generation[edit]
Time: 2011
Design[edit]
Epitaxy 1250: Specs of the 1250nm EPI Epitaxy 1470: Specs of the 1470nm EPI
Electrode Design: Scripts for electrode design Calculation results for different electrode designs
Simulation: Optical mode calculation (for COMSOL), support tilt QW sidewall Optical mode calculation (Fimmwave+Jaredwave), limited to vertical sidewall Taper simulation input script (Fimmwave+Jaredwave), baseline/short pMesa/no pMesa
Process[edit]
xls file: Media:EAM11_process.xls slides: Media:EAM11_process_flow.pptx implantation: Media: EAM11_implantation.zip AR coating: Media: EAM11_ARCoating.zip
Mask[edit]
CPW Testing Mask (revised on 20110127) EAM11 Mask Final (revised on 20111128) EAM11 Mask Map (revised on 20120828) EAM11 Mask Design Overview (revised on 20120828)
Data[edit]
=== TLM === EAM11 B1-A (1310nm) before SU8 spin EAM11 B2-A (1550nm) before SU8 spin EAM11 B1-A (1310nm) after final process EAM11 B1-B (1310nm) after final process EAM11 B2-B (1550nm) after final process
Report[edit]
Q1 report: Study of Integrated Hybrid Silicon Modulators Q1 slides: Comparison of different hybrid modulator design
Presentation[edit]
OFC2012：1.3μm Hybrid Silicon Electroabsorption Modulator with Bandwidth beyond 67 GHz OI2012：1.3μm Lumped Hybrid Silicon Electroabsorption Modulator under 1Vpp-Operation
