Difference between revisions of "Modulator"
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[[Media:EAM11_mask_final.zip|EAM11 Mask Final/revised on 20111128]] | [[Media:EAM11_mask_final.zip|EAM11 Mask Final/revised on 20111128]] | ||
| − | [[Media:EAM11_mask_map.pptx | + | [[Media:EAM11_mask_map.pptx|EAM11 Mask Map/revised on 20120828]] |
== Report == | == Report == | ||
Revision as of 12:07, 28 August 2012
The objective is to develop high speed, low driving voltage, high extinction ratio modulator based on hybrid silicon platform.
Contents
The first generation
Time: 2010
Process
xls file: Media:EAM10_process.xls slides: Media:EAM10_process.pptx
Mask
Mask files: Media: EAM10_Mask.zip
Presentation
OFC2011: Over 40 GHz Traveling-Wave Electroabsorption Modulator Based on Hybrid Silicon Platform
Related Papers
http://optoelectronics.ece.ucsb.edu/profile/yongbo-tang
The second generation
Time: 2011
Design
Epitaxy 1250: Specs of the 1250nm EPI Epitaxy 1470: Specs of the 1470nm EPI
Electrode Design: Scripts for electrode design Calculation results for different electrode designs
Simulation: Optical mode calculation (for COMSOL), support tilt QW sidewall Optical mode calculation (Fimmwave+Jaredwave), limited to vertical sidewall Taper simulation input script (Fimmwave+Jaredwave), baseline/short pMesa/no pMesa
Process
xls file: Media:EAM11_process.xls slides: Media:EAM11_process_flow.pptx
Mask
CPW Testing Mask/revised on 20110127 EAM11 Mask Final/revised on 20111128
EAM11 Mask Map/revised on 20120828
Report
Q1 report: Study of Integrated Hybrid Silicon Modulators Q1 slides: Comparison of different hybrid modulator design
Presentation
OFC2012：1.3μm Hybrid Silicon Electroabsorption Modulator with Bandwidth beyond 67 GHz OI2012：1.3μm Lumped Hybrid Silicon Electroabsorption Modulator under 1Vpp-Operation
