Revision as of 12:36, 28 August 2012

The objective is to develop high speed, low driving voltage, high extinction ratio modulator based on hybrid silicon platform.

The first generation

Time: 2010

Process

 xls file: Media:EAM10_process.xls‎
 
 slides: Media:EAM10_process.pptx

Mask

 Mask files: Media: EAM10_Mask.zip

Presentation

 OFC2011: Over 40 GHz Traveling-Wave Electroabsorption Modulator Based on Hybrid Silicon Platform

Related Papers

http://optoelectronics.ece.ucsb.edu/profile/yongbo-tang

The second generation

Time: 2011

Design

 Epitaxy 1250: Specs of the 1250nm EPI
 
 Epitaxy 1470: Specs of the 1470nm EPI

 Electrode Design:
 
   Scripts for electrode design
 
   Calculation results for different electrode designs

 Simulation:
  
   Optical mode calculation (for COMSOL), support tilt QW sidewall
 
   Optical mode calculation (Fimmwave+Jaredwave), limited to vertical sidewall
 
   Taper simulation input script (Fimmwave+Jaredwave), baseline/short pMesa/no pMesa

Process

 xls file: Media:EAM11_process.xls‎
 
 slides: Media:EAM11_process_flow.pptx
 
 implantation: Media: EAM11_implantation.zip
 
 AR coating: Media: EAM11_ARcoating.zip

Mask

 CPW Testing Mask (revised on 20110127)
 
 EAM11 Mask Final (revised on 20111128‎)
 
 EAM11 Mask Map (revised on 20120828)
 
 EAM11 Mask Design Overview (revised on 20120828)

Report

 Q1 report: Study of Integrated Hybrid Silicon Modulators
 
 Q1 slides: Comparison of different hybrid modulator design

Presentation

 OFC2012：1.3μm Hybrid Silicon Electroabsorption Modulator with Bandwidth beyond 67 GHz 
 
 OI2012：1.3μm Lumped Hybrid Silicon Electroabsorption Modulator under 1Vpp-Operation 

Related Papers

http://optoelectronics.ece.ucsb.edu/profile/yongbo-tang